CM1000HC-66R overview
CM1000HC-66R is a component documented by Mitsubishi Electric Sem. The PDF description identifies it as "HIGH POWER SWITCHING USE INSULATED TYPE." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: Mitsubishi Electric Sem...
- Part number: CM1000HC-66R
- Category: IC
- Datasheet length: 9 Pages
Key features noted in the PDF
- These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not.
- Mitsubishi Electric Corporation assumes no res ponsibility for any damage, or infringement of any third-party’s rights, originating in the use of any pr oduct data, diagrams, char.
- All information contained in thes e materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of t.
- When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all informati.
- Mitsubishi Electric Corporation semiconductors are not designed or m anufactured for use in a device or system that is used under circum stances in which human life is potentially.
- The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials.
- If these products or technologies are subject to the Japanese export cont rol restrictions, they must be exported under a license from the Ja panese government and cannot be im po.
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- Pulse width and repetition rate shoul d be such that junction temperature (Tj) does not exceed Topmax rating(150°C).
- Junction temperature (Tj) should not exceed Tjmax rating (150°C).
- 4Ω LS = 15 0 nH , T j = 15 0 °C In ductive l oa d Eoff Eon < HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 (HVM-1061-B) PERFO.
- 4Ω LS = 1 50n H, Tj = 1 50° C In ductive l oa d tr td(on) td(of f) < HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 (HVM-1061.
- 4Ω Tj = 1 50° C < HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 (HVM-1061-B) © 2011 MITSUBISHI ELECTRIC CORPORATION.
Topics covered by the datasheet
The document includes sections related to:
- DATASHEET SEARCH SITE
- ELECTRICAL CHARACTERISTICS
Engineering review checklist
- Confirm repetitive reverse voltage, average forward current, surge current and leakage at the intended temperature.
- Check forward-voltage loss and reverse-recovery behavior at the actual current and switching frequency.
- Review package thermal resistance, copper area, polarity marking and transient derating before layout release.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the CM1000HC-66R datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=cm1000hc-66r-mitsubishi-electric-sem