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< HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM1000HC-66R 1-element in a Pack Insulated Type LPT-IGBT / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
< HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 (HVM-1061-B) MAXIMUM RATINGS Symbol Item Conditions Ratings Unit VGE = 0V, Tj = -40…+150°C 3300 VCES Collector-emitter voltage VGE = 0V, Tj = −50°C 3200 V VGES Gate-emitter voltage V CE = 0V, Tj = 25°C ± 20 V IC DC, Tc = 95°C 1000 A ICRM Collector current Pulse (Note 1) 2000 A IE DC 1000 A IERM E m i t t e r c u r r e n t (Note 2) Pulse (Note 1) 2000 A Ptot Maximum power dissipation (Note 3) T c = 25°C, IGBT part 10400 W Viso Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. 6000 V Ve Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, Q PD ≤ 10 pC 2600 V Tj Junction temperature −50 ~ +150 °C Tjop Operating junction temperature −50 ~ +150 °C Tstg Storage temperature −55 ~ +150 °C tpsc Short circuit pulse width VCC = 2500V, VCE ≤ VCES, VGE =15V, Tj =150°C 10 s
ELECTRICAL CHARACTERISTICS
Limits Symbol Item Conditions Min Typ Max Unit Tj = 25°C — — 4.0 Tj = 125°C — 4.0 — ICES Collector cutoff current VCE = VCES, VGE = 0V mA VGE(th) Gate-emitter threshold voltage V CE = 10 V, IC = 100 mA, Tj = 25°C 5.7 6.2 6.7 V IGES Gate leakage current VGE = VGES, VCE = 0V, Tj = 25°C −0.5 — 0.5 µA Cies Input capacitance — 140.0 — nF Coes Output capacitance — 8.7 — nF Cres Reverse transfer capacitance VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C — 4.0 — nF QG Total gate charge VCC = 1800V, IC = 1000A, VGE = ±15V — 10.7 — µC Tj = 25°C — 2.45 — Tj = 125°C — 3.10 3.70VCEsat Collector-emitter saturation voltage IC = 1000 A (Note 4) VGE = 15 V Tj = 150°C — 3.25 — V Tj = 25°C — 1.00 — Tj = 125°C — 0.95 1.25td(on) Turn-on delay time Tj = 150°C — 0.95 1.25 µs Tj = 25°C — 0.28 — Tj = 125°C — 0.30 0.50tr Turn-on rise time Tj = 150°C — 0.30 0.50 µs Tj = 25°C — 1.40 — Tj = 125°C — 1.85 — Eon(10%) Turn-on switching energy (Note 5) J Tj = 25°C — 1.50 — Tj = 125°C — 1.95 — Eon Turn-on switching energy (Note 6) VCC = 1800 V IC = 1000 A VGE = ±15 V RG(on) = 2.4 Ω Ls = 150 nH Inductive load J Tj = 25°C — 2.70 — Tj = 125°C — 2.80 3.30td(off) Turn-off delay time Tj = 150°C 2.85 3.30 µs Tj = 25°C — 0.30 — Tj = 125°C — 0.35 1.00tf Turn-off fall time Tj = 150°C — 0.40 1.00 µs Tj = 25°C — 1.35 — Tj = 125°C — 1.65 — Eoff(10%) Turn-off switching energy (Note 5) Tj = 150°C 1.70 — J Tj = 25°C — 1.50 — Tj = 125°C — 1.80 — Eoff Turn-off switching energy (Note 6) VCC = 1800 V IC = 1000 A VGE = ±15 V RG(off) = 8.4 Ω Ls = 150 nH Inductive load J
< HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 (HVM-1061-B) ELECTRICAL CHARACTERISTICS (continuation) Limits Symbol Item Conditions Min Typ Max Unit Tj = 25°C — 2.15 — Tj = 125°C — 2.30 2.80VEC Emitter-collector voltage (Note 2) IE = 1000 A (Note 4) VGE = 0 V Tj = 150°C — 2.25 — V Tj = 25°C — 0.50 — Tj = 125°C — 0.70 trr Reverse recovery time (Note 2) µs Tj = 25°C — 850 — Tj = 125°C — 1000 — Irr Reverse recovery current (Note 2) Tj = 150°C — 1050 — A Tj = 25°C — 700 — Tj = 125°C — 1150 Qrr Reverse recovery charge (Note 2) Tj = 150°C — 1350 — µC Tj = 25°C 0.70 — Tj = 125°C — 1.20 Erec(10%) Reverse recovery energy (Note 2) (Note 5) J Tj = 25°C 0.80 — Tj = 125°C — 1.35 Erec Reverse recovery energy (Note 2) (Note 6) VCC = 1800 V IC = 1000 A VGE = ±15 V RG(on) = 2.4 Ω Ls = 150 nH Inductive load J THERMAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Rth(j-c)Q Junction to Case, IGBT part — — 12.0 K/kW Rth(j-c)D Thermal resistance Junction to Case, FWDi part — — 22.5 K/kW Rth(c-s) Contact thermal resistance Case to heat sink, grease = 1W/m·k, D(c-s) = 100m — 9.0 — K/kW MECHANICAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Mt M8 : Main terminals screw 7.0 — 22.0 N·m Ms M6 : Mounting screw 3.0 — 6.0 N·m Mt Mounting torque M4 : Auxiliary terminals screw 1.0 — 3.0 N·m m Mass — 0.8 — kg CTI Comparative tracking index 600 — — — da Clearance 19.5 — — mm ds Creepage distance 32.0 — — mm LP CE Parasitic stray inductance — 16.5 — nH RCC’+EE’ Internal lead resistance TC = 25°C — 0.18 — mΩ rg Internal gate resistance T C = 25°C — 2.25 — Ω Note1. Pulse width and repetition rate shoul d be such that junction temperature (Tj) does not exceed Topmax rating(150°C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. E on(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. Definition of all items is according to IEC 60747, unless otherwise specified.
< HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 (HVM-1061-B) PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 400 800 1200 1600 2000 0123456 Collector - Emitter Voltage [V] Collector Current [A] VGE = 9 V VGE = 11 V VGE = 15 V VGE = 13 V Tj = 1 50° C VGE = 19 V COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 400 800 1200 1600 2000 012345 Collector-Emitter Saturation Voltage [V] Collector Current [A] VGE = 15 V Tj = 1 50° C Tj = 1 25° C Tj = 25°C TRANSFER CHARACTERISTICS (TYPICAL) 400 800 1200 1600 2000 02468 1 0 1 2 Gate - Emitter Voltage [V] Collector Current [A] Tj = 25° C VCE = VGE Tj = 1 50 °C FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 400 800 1200 1600 2000 012345 Emitter-Collector Voltage [V] Emitter Current [A] Tj = 1 50 °CTj = 25° C Tj = 1 25° C
< HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 (HVM-1061-B) PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) 100 1000 0.1 1 10 100 Collector-Emitter Voltage [V] Capacitance [nF] Ci es VGE = 0V, T j = 25°C f = 10 0kHz Co es Cres HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0 400 800 1200 1600 2000 Collector Current [A] Switching Energies [J/pulse] Erec VCC = 18 00 V, VGE = ±1 5 V RG(on) = 2 .4Ω, RG( off) = 8. 4Ω LS = 15 0 nH , T j = 12 5 °C In ductive l oa d Eoff Eon GATE CHARGE CHARACTERISTICS (TYPICAL) -1 5 -1 0 048 1 2 1 6 Gate Charge [µC] Gate-Emitter Voltage [V] VCE = 18 00V, IC = 10 00A Tj = 2 5° C HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0 400 800 1200 1600 2000 Collector Current [A] Switching Energies [J/pulse] Erec VCC = 18 00 V, VGE = ±1 5 V RG(on) = 2 .4Ω, RG( off) = 8. 4Ω LS = 15 0 nH , T j = 15 0 °C In ductive l oa d Eoff Eon
< HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 (HVM-1061-B) PERFORMANCE CURVES HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0 5 10 1 5 20 Gate resistor [Ohm] Switching Energies [J/pulse] Erec VCC = 18 00V, IC = 10 00A VGE = ±15 V, LS = 15 0nH Tj = 12 5°C , Indu cti ve lo ad Eon Eoff HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 0.01 0.1 100 100 1000 10000 Collector Current [A] Switching Times [µs] tf VCC = 18 00 V, VGE = ± 15V RG(on) = 2 .4Ω, RG( off) = 8. 4Ω LS = 1 50n H, Tj = 1 25° C In ductive l oa d tr td (on) td(of f) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0 5 10 1 5 20 Gate resistor [Ohm] Switching Energies [J/pulse] Erec VCC = 18 00V, IC = 10 00A VGE = ±15 V, LS = 15 0nH Tj = 15 0°C , Indu cti ve lo ad Eon Eoff HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 0.01 0.1 100 100 1000 10000 Collector Current [A] Switching Times [µs] tf VCC = 18 00 V, VGE = ± 15V RG(on) = 2 .4Ω, RG( off) = 8. 4Ω LS = 1 50n H, Tj = 1 50° C In ductive l oa d tr td(on) td(of f)
< HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 (HVM-1061-B) PERFORMANCE CURVES FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0.1 100 100 1000 10000 Emitter Current [A] Reverse Recovery Time [µs] 100 1000 10000 Reverse Recovery Current [A] trr Irr VCC = 18 00 V, VGE = ± 15V RG(on) = 2 .4Ω, LS = 150 nH Tj = 1 25° C, In ductive l oa d TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.2 0.4 0.6 0.8 1.2 0.001 0.01 0.1 1 10 Time [s] Normalized Transient Thermal impedance Rth(j-c )Q = 12 .0 K/kW Rth(j-c )D = 22.5K/kW FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0.1 100 100 1000 10000 Emitter Current [A] Reverse Recovery Time [µs] 100 1000 10000 Reverse Recovery Current [A] trr Irr VCC = 18 00 V, VGE = ± 15V RG(on) = 2 .4Ω, LS = 150 nH Tj = 1 50° C, In ductive l oa d exp 1 ) ( ) ( i tn i ic j th R Zt 1234 Ri [K/kW] : 0.0096 0.1893 0.4044 0.3967 i [sec] : 0.0001 0.0058 0.0602 0.3512
< HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 (HVM-1061-B) PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1000 2000 3000 4000 0 1 0 0 02 0 0 03 0 0 04 0 0 0 Collector-Emitter Voltage [V] Collector Current [A] VCC 25 00 V, VGE = ± 15V Tj = 150 °C, RG(o ff) = 8. 4Ω FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 1000 2000 3000 4000 0 1 0 0 02 0 0 03 0 0 04 0 0 0 Emitter-Collector Voltage [V] Reverse Recovery Current [A] VCC 25 00 V, di /d t < 6 kA/µ s Tj = 150 °C SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 0 1 000 20 00 3000 4000 Collector-Emitter Voltage [V] Collector Current [kA] VCC 25 00V, VGE = ±1 5V RG(on) = 2 .4Ω, RG( off) = 8. 4Ω Tj = 1 50° C
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