CAS100H12AM1 overview

CAS100H12AM1 is a component documented by Cree, Inc. The PDF description identifies it as "1200V, 100A Silicon Carbide Half-Bridge Module." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.

Datasheet snapshot

  • Manufacturer: Cree, Inc
  • Part number: CAS100H12AM1
  • Category: IC
  • Datasheet length: 7 Pages

Key features noted in the PDF

  • Ultra Low Loss
  • High Ruggedness
  • High-Frequency Operation
  • Zero Reverse Recovery Current from Diode
  • Zero Turn-off Tail Current from MOSFET
  • Positive Temperature Coefficient on VF and VDS(on) System Benefits
  • Enables compact and lightweight systems

Applications listed in the PDF

  • High Power Converters
  • Motor Drives
  • Solar Inverters
  • UPS and SMPS
  • Induction Heating Package Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes VDS Drain - Source Voltage 1200 V VGS Gate - Sou.

Specifications and operating details

The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.

  • Unit Test Conditions Note V(BR)DSS Drain - Source Breakdown voltage 1200 V VGS, = 0V, ID = 100uA VGS(th) Gate Threshold Voltage 2.0 2.5 V VDS = VGS, ID = 5mA Fig 6 2.6 3.1 VDS = VGS, ID = 50mA IDSS Zero Gate Voltage Drain Current 5 500 μA.
  • Unit Test Conditions Note RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.16 0.19 K /W RthJCD Thermal Resistance Juction-to-Case for Diode 0.35 0.37 Module Application Note: The SiC MOSFET module switches at speeds beyond what is cu.

Topics covered by the datasheet

The document includes sections related to:

  • Features
  • Applications

Engineering review checklist

  • Confirm repetitive reverse voltage, average forward current, surge current and leakage at the intended temperature.
  • Check forward-voltage loss and reverse-recovery behavior at the actual current and switching frequency.
  • Review package thermal resistance, copper area, polarity marking and transient derating before layout release.

Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.

View the complete PDF and model record

Open the CAS100H12AM1 datasheet and model details to review the complete PDF, document pages and available product information.

Source attribution

Adapted from the PDF associated with this DigiCamel model page.

Source model URL: https://www.digicamel.com/product.php?slug=cas100h12am1-cree-inc