CAS100H12AM1 CREE | Alldatasheet

Document overview

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Technical content

Features

  • Ultra Low Loss
  • High Ruggedness
  • High-Frequency Operation
  • Zero Reverse Recovery Current from Diode
  • Zero Turn-off Tail Current from MOSFET
  • Positive Temperature Coefficient on VF and VDS(on) System Benefits
  • Enables compact and lightweight systems
  • High efficiency operation
  • Mitigate over-voltage protection
  • Ease of transistor gate control
  • Reduces thermal requirements

Applications

  • High Power Converters
  • Motor Drives
  • Solar Inverters
  • UPS and SMPS
  • Induction Heating Package Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes VDS Drain - Source Voltage 1200 V VGS Gate - Source Voltage -5/+20 V ID Continuous Drain Current 165 A VGS = 20V, TC=25˚C

105 VGS = 20V, TC=100˚C

ID(pulse) Pulsed Drain Current 400 A Pulse width tP = 1ms Limited by Tjmax,TC = 25˚C TJ Junction Temperature 150 ˚C TC ,TSTG Case and Storage Temperature Range -55 to +125 ˚C Visol Case Isolation Voltage 6000 V AC, t=1min LStray Stray Inductance <15 nH Measured along maximum path from pad to Lug M Mounting Torque 2.94 Nm G Weight 200 g Clearance Distance 12.2 mm Terminal to terminal Creepage Distance 17.3 mm Terminal to terminal 20.2 mm Terminal to base plate Part Number Package Marking CAS100H12AM1 Half-Bridge Module CAS100H12AM1 VDS 1200 V ID (TC= 100˚C) 100 A RDS(on) 16 mΩ

CAS100H12AM1, Rev. - Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain - Source Breakdown voltage 1200 V VGS, = 0V, ID = 100uA VGS(th) Gate Threshold Voltage 2.0 2.5 V VDS = VGS, ID = 5mA Fig 6 2.6 3.1 VDS = VGS, ID = 50mA

1.8 VDS = VGS, ID = 5mA, TJ = 150ºC

2.4 VDS = VGS, ID = 50mA, TJ = 150ºC

IDSS Zero Gate Voltage Drain Current 5 500 μA VDS = 1200V, VGS = 0V 50 1250 VDS = 1200V, VGS = 0V, TJ = 150ºC IGSS Gate-Source Leakage Current 0.25 μA VGS, = 20V, VDS = 0V RDS(on) On State Resistance 16 20 mΩ VGS = 20V, ID = 20A Fig 4 20 24 VGS = 20V, ID = 20A, TJ = 150ºC gfs Transconductance S VDS = 20V, ID = 100A Fig 5

32 VDS = 20V, ID = 100A, TJ = 150ºC

Ciss Input Capacitance 9500 pF VDS = 800V, VGS = 0V f = 1MHz, VAC = 25mV Coss Output Capacitance 600 Crss Reverse Transfer Capacitance 65 EON Turn-On Switching Energy (25ºC) (125ºC) 2.4 2.0 mJ VDD = 600V, VGS = -5V/+20V ID = 100A, RG = 5Ω Inductive Load Fig 10 EOff Turn-Off Switching Energy (25ºC) (125ºC) 1.3 1.4 mJ RG Internal Gate Resistance 1.25 Ω f = 1MHz, VAC = 25mV QG Gate Charge 490 nC VDD= 600V, ID= 100A Free-Wheeling SiC Schottky Diode Characteristics VSD Diode Forward Voltage 1.8 2.2 V IF = 100A Fig 9

2.5 IF = 100A, TJ = 150ºC

QC Total Capacitive Charge 1.6 μC IF = 100A, VR = 600V diF/dt = 2200A/μs, TJ = 25ºCtRR Reverse Recovery Time 47 ns ERR Reverse Recovery Energy 0.5 mJ C Total Capacitance 5000 pF VR=0V, f = 1MHz

400 VR=200V, f = 1MHz

300 VR=400V, f = 1MHz

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.16 0.19 K /W RthJCD Thermal Resistance Juction-to-Case for Diode 0.35 0.37 Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive VDS overshoots.

CAS100H12AM1, Rev. - Package Dimensions (mm)

CAS100H12AM1, Rev. - Package Dimensions (mm)

CAS100H12AM1, Rev. - This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc. Cree, Inc.

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Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Circuit Diagram 22V 6.8V RG(int) 22V 6.8V RG(int) G1 RTN G2 RTN S1/D2