C3M0120090D CREE | Alldatasheet

Document overview

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Technical content

Features

  • New C3M SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant Benefits
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
  • Lighting Package Part Number Package C3M0120090D TO-247-3 VDS 900 V I D @ 25˚C 23 A RDS(on) 120 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 900 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -8/+18 V Absolute maximum values VGSop Gate - Source Voltage -4/+15 V Recommended operational values Note: 1 ID Continuous Drain Current A VGS = 15 V, TC = 25˚C Fig. 19

15 VGS = 15 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 50 A Pulse width tP limited by Tjmax Fig. 22 PD Power Dissipation 97 W TC=25˚C, TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Note (1): MOSFET can also safely operate at 0/+15 V

C3M0120090D Rev. - , 11-2015 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 900 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.8 2.1 3.5 V VDS = VGS, ID = 3 mA Fig. 11

1.6 V VDS = VGS, ID = 3 mA, TJ = 150ºC

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 120 155 mΩ VGS = 15 V, ID = 15 A Fig. 4, 5, 6170 VGS = 15 V, ID = 15 A, TJ = 150ºC gfs Transconductance 7.7 S VDS= 15 V, IDS= 15 A Fig. 7

6.7 VDS= 15 V, IDS= 15 A, TJ = 150ºC

Ciss Input Capacitance 350 pF VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 40 Crss Reverse Transfer Capacitance 3 Eoss Coss Stored Energy 9 μJ Fig. 16 EON Turn-On Switching Energy 170 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 15 A, RG(ext) = 2.5Ω, L= 142 μH, TJ = 150ºC Fig. 26, 30EOFF Turn Off Switching Energy 25 td(on) Turn-On Delay Time 27 ns VDD = 400 V, VGS = -4 V/15 V ID = 15 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27, tr Rise Time 10 td(off) Turn-Off Delay Time 25 tf Fall Time 8 RG(int) Internal Gate Resistance 16 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 4.8 nC VDS = 400 V, VGS = -4 V/15 V ID = 15 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 5.0 Qg Total Gate Charge 17.3 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.8 V VGS = -4 V, ISD = 7.5 A Fig. 8, 9, 104.4 V VGS = -4 V, ISD = 7.5 A, TJ = 150 °C IS Continuous Diode Forward Current 21 A VGS = -4 V Note 2 IS, pulse Diode pulse Current 50 A VGS = -4 V, pulse width tP limited by Tjmax Note 2 trr Reverse Recover time 24 ns VGS = -4 V, ISD = 7.5 A, VR = 400 V dif/dt = 900 A/µs, TJ = 150 °C Note 2Qrr Reverse Recovery Charge 115 nC Irrm Peak Reverse Recovery Current 6.2 A Note (2): When using SiC Body Diode the maximum recommended VGS = -4V Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 1.3 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40

Figure 29. Clamped Inductive Switching Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.

C3M0120090D Rev. - , 11-2015 Package Dimensions Package TO-247-3 Recommended Solder Pad Layout TO-247-3 POS Inches Millimeters Min Max Min Max A .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC N 3 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9˚ 11˚ 9˚ 11˚ U 9˚ 11˚ 9˚ 11˚ V 2˚ 8˚ 2˚ 8˚ W 2˚ 8˚ 2˚ 8˚ Pinout Information:

  • Pin 1 = Gate
  • Pin 2, 4 = Drain
  • Pin 3 = Source T U WV

C3M0120090D Rev. -, 11-2015 Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • C2M PSPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support