B20N03 overview
B20N03 is a component documented by Excelliance MOS Corp. The PDF description identifies it as "N?륝hannel Logic Level Enhancement Mode Field Effect Transistor." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: Excelliance MOS Corp.
- Part number: B20N03
- Category: Logic IC
- Datasheet length: 5 Pages
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- 2Duty cycle 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper.
- ʹͲͳ͵/ͺ/ͳ p.ʹ EMB20N03V ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltag.
- 2Independent of operating temperature.
Engineering review checklist
- Confirm repetitive reverse voltage, average forward current, surge current and leakage at the intended temperature.
- Check forward-voltage loss and reverse-recovery behavior at the actual current and switching frequency.
- Review package thermal resistance, copper area, polarity marking and transient derating before layout release.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the B20N03 datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=b20n03-excelliance-mos-corp