ZXT11N15DF ZETEX | Alldatasheet

Document overview

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Technical content

SuperSOT4™ 15V NPN SILICON LOW SATURATION TRANSISTOR C E B SUMMARY VCEO=15V; RSAT = 37m ;I C= 3A

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.

FEATURES

  • Extremely Low Equivalent On Resistance
  • Extremely Low Saturation Voltage
  • h FE characterised up to 5A
  • IC=3A Continuous Collector Current
  • SOT23 package

APPLICATIONS

  • DC - DC Converters
  • Power Management Functions
  • Power switches
  • Motor control

ORDERING INFORMATION

(inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXT11N15DFTA 7 8mm embossed 3000 units ZXT11N15DFTC 13 8mm embossed 10000 units DEVICE MARKING 1N5 Top View SOT23

PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H110885 secs. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO 7.5 V Peak Pulse Current I CM 5A Continuous Collector Current I C 3A Base Current I B 500 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 625 mW mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C

0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Derating Curve Temperature (°C) M ax Pow er Dissipation 100m 1 10 10m 100m Single Pulse Tamb=25°C 100µs 1ms 10ms 100ms DC Safe Operating Area IC Collector Current (A) VCE Collector-Emitter Voltage (V) 100µ 1m 10m 100m 1 10 100 1k 100 125 150 175 200 225 Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Therm al Resistance (°C/W Pulse Width (s) TYPICAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 40 V I C=100 /H9262A Collector-Emitter Breakdown Voltage V(BR)CEO 15 V I C=10mA* Emitter-Base Breakdown Voltage V (BR)EBO 7.5 V I E=100 /H9262A Collector Cut-Off Current I CBO 100 nA V CB=32V Emitter Cut-Off Current I EBO 100 nA V EB=6V Collector Emitter Cut-Off Current I CES 100 nA V CES =32V Collector-Emitter Saturation Voltage VCE(sat) 7 110 150 mV mV mV mV I C=0.1A, I B=10mA* IC=1A, I B=10mA* IC=1A, I B=100mA* IC=3A, I B=150mA* Base-Emitter Saturation Voltage V BE(sat) 0.9 1.0 V I C=3A, I B=150mA* Base-Emitter Turn-On Voltage V BE(on) 0.85 1.0 V I C=3A, V CE=2V* Static Forward Current Transfer Ratio hFE 200 300 250 200 150 900 I C=10mA, V CE=2V* IC=200mA, V CE=2V* IC=1A, V CE=2V* IC=3A, V CE=2V* IC=5A, V CE=2V* Transition Frequency f T 145 MHz I C=50mA, V CE=10V f=50MHz Output Capacitance C obo 26 pF V CB=10V, f=1MHz Turn-On Time t (on) 110 ns V CC=10V, I C=3A IB1=IB2=30mA Turn-Off Time t (off) 220 ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

0.00 0.05 0.10 0.15 0.20 0.25 VCE(SAT) vI C IC/IB=50 100°C 25°C -55°C V CE(SAT) (V) IC Collector Current (A) 1m 10m 100m 1 10 10m 100m VCE(SAT) vI C Tamb=25°C IC/IB=100 IC/IB=50 IC/IB=10 V CE(SAT) (V) IC Collector Current (A) 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 hFE vI C VCE=2V -55°C 25°C 100°C Norm alised Gain IC Collector Current (A) 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 VBE(SAT) vI C IC/IB=50 100°C 25°C -55°C V BE(SAT) (V) IC Collector Current (A) 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 VBE(ON) vI C VCE=2V 100°C 25°C -55°C V BE(O N)(V) IC Collector Current (A)

N PACKAGE DIMENSIONS PAD LAYOUT DETAILS DIM Millimetres Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 NOM 0.075 K 0.01 0.10 0.0004 0.004 L 2.10 2.50 0.0825 0.0985 N NOM 0.95 NOM 0.037 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong © Zetex plc 1999 Telefon: (49) 89 45 49 49 0 Telephone: (631) 543-7100 Telephone:(852) 26100 611 Fax: (49) 89 45 49 49 49 Fax: (631) 864-7630 Fax: (852) 24250 494 Internet :http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.