FMMV2101 ZETEX | Alldatasheet
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/G31 /G33 SOT23 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES ISSUE 3 JANUARY 1996 ✪ PIN CONFIGURATION PARTMARKING DETAILS SEE TUNING CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Reverse Voltage V R 30 V Forward Current I F 200 mA Power Dissipation at Tamb=25°C P tot 330 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown Voltage VBR 30 V IR = 10µA Reverse current I R 20 nA V R = 25V Series Inductance L S 3.0 nH f=250MHz Lead length≈1.5mm Diode Capacitance Temperature Coefficient TCC 280 400 ppm/ °C V R = 4V, f=1MHz Lead length≈1.5mm Case Capacitance C C 0.15 pF f=1MHz TUNING CHARACTERISTICS (at Tamb = 25°C). Type No. Nominal Capacitance (pF) VR = 4V, f=1MHz Q Figure of MERIT VR = 4V, f=50MHz Turning Ratio C2 / C30 f=1MHz Partmark * SELECTED DEVICE RANGE OFFERED ONLY 3 - 185 FMMV2101 to FMMV2109