ZXMP6A13F ZETEX | Alldatasheet

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Technical content

V(BR)DSS = -60V; RDS(ON) = 0.400 ID =-1.1A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • DC - DC converters
  • Power management functions
  • Relay and solenoid driving
  • Motor control DEVICE MARKING
  • 7P6 ZXMP6A13F ISSUE 2 - JULY 2004 60V P-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP6A13FTA 7” 8mm 3000 units ZXMP6A13FTC 13” 8mm 10000 units

ORDERING INFORMATION

PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a) RθJA 200 °C/W Junction to Ambient (b) RθJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t ≤5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -60 V Gate Source Voltage V GS 20 V Continuous Drain Current V GS=10V; T A=25°C (b) VGS=10V; T A=70°C (b) VGS=10V; T A=25°C (a) ID -1.1 -0.8 -0.9 A Pulsed Drain Current (c) IDM -4.0 A Continuous Source Current (Body Diode) (b) IS -1.2 A Pulsed Source Current (Body Diode) (c) ISM -4.0 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 625 mW mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 806 6.5 mW mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -60 V I D=-250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS -1 /H9262AV DS=-60V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V I D=-250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.400 0.600 /H9024 /H9024 VGS=-10V, I D=-0.9A VGS=-4.5V, I D=-0.8A Forward Transconductance (1)(3) gfs 1.8 S V DS=-15V,I D=-0.9A DYNAMIC (3) Input Capacitance C iss 233 pF VDS=-30V, V GS=0V, f=1MHzOutput Capacitance C oss 17.4 pF Reverse Transfer Capacitance C rss 9.6 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.6 ns VDD =-30V, I D=-1A RG 6.0 /H9024,V GS=-10V Rise Time t r 2.3 ns Turn-Off Delay Time t d(off) 13 ns Fall Time t f 5.8 ns Gate Charge Q g 2.4 nC V DS=-30V,V GS=-5V, ID=-0.9A Total Gate Charge Q g 5.1 nC VDS=-30V,V GS=-10V, ID=-0.9AGate-Source Charge Q gs 0.7 nC Gate-Drain Charge Q gd 0.7 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -0.95 V T J=25°C, I S=-0.8A, VGS=0V Reverse Recovery Time (3) trr 22.6 ns T J=25°C, I F=-0.9A, di/dt= 100A/ µs Reverse Recovery Charge (3) Qrr 23.2 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2004 PACKAGE OUTLINE PAD LAYOUT DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Max Max G 1.90 NOM 0.075 NOM /H5007/H5007 /H5007 PACKAGE DIMENSIONS