ZXMP62M832 ZETEX | Alldatasheet

Document overview

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Technical content

P-Channel V(BR)DSS = -20V; RDS(ON) = 0.6 ;I D= -1.0A

DESCRIPTION

Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Reduced component count

FEATURES

  • Low On - Resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • 3mm x 2mm MLP

APPLICATIONS

  • DC-DC Converters
  • Power Management Functions
  • Disconnection switches
  • Motor Control DEVICE MARKING DPA ZXMP62M832 PROVISIONAL ISSUE A - MAY 2002 MPPS™ Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMP62M832TA 7 ’‘ 8mm 3000 units

ORDERING INFORMATION

PROVISIONAL ISSUE A - MAY 2002 PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) R θJA 83.3 °C/W Junction to Ambient (b)(f) R θJA 51 °C/W Junction to Ambient (c)(f) R θJA 125 °C/W Junction to Ambient (d)(f) R θJA 111 °C/W Junction to Ambient (d)(g) R θJA 73.5 °C/W Junction to Ambient (e)(g) R θJA 41.7 °C/W THERMAL RESISTANCE Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW. PARAMETER SYMBOL P- Channel UNIT Drain-Source Voltage V DSS -20 V Gate-Source Voltage V GS /H1100612 V Continuous Drain Current@V GS=10V; T A=25 /H11034C (b)(f) @VGS=10V; T A=70 /H11034C (b)(f) @VGS=10V; T A=25 /H11034C (a)(f) ID -1.6 -1.3 -1.3 A A A Pulsed Drain Current I DM -5.6 A Continuous Source Current (Body Diode)(b)(f) I S -2.7 A Pulsed Source Current (Body Diode) I SM -5.6 A Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.5 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 1 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 1.13 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 3 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS.

PROVISIONAL ISSUE A - MAY 2002 11 0 10m 100m 0 25 50 75 100 125 1500.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100µ 1m 10m 100m 1 10 100 1k0 0.1 1 10 1000 100 125 150 175 200 225 0.1 1 10 1000.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Note (a)(f) 100us 100ms RDS(ON) Limited 1ms Safe Operating Area Single Pulse, Tamb=25°C DC 10ms ID Drain Current (A) VDS Drain-Source Voltage (V) 1oz Cu Note (d)(f) 1oz Cu Note (d)(g) 2oz Cu Note (a)(f) 2oz Cu Note (e)(g) Derating Curve Max Power Dissipation (W) Temperature (°C) Note (a)(f) D=0.2 D=0.5 D=0.1 Transient Thermal Impedance Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) 1oz copper Note (g) 1oz copper Note (f)2oz copper Note (f) 2oz copper Note (g) Thermal Resistance v Board Area Thermal Resistance (°C/W) B o a r dC uA r e a( s q c m ) 1oz copper Note (g) 2oz copper Note (g) 1oz copper Note (f) 2oz copper Note (f) Power Dissipation v Board Area Tamb=25°C Tjm a x=150°C Continuous PD Dissipation (W) B o a r dC uA r e a( s q c m ) TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE A - MAY 2002 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -20 V ID=-250 µA, V GS=0V Zero Gate Voltage Drain Current I DSS -1 /H9262AV DS=-20V, V GS=0V Gate-Body Leakage I GSS /H11006100 nA V GS=/H1100612V, V DS=0V Gate-Source Threshold Voltage V GS(th) -0.7 V I D=-250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.6 0.9 Ω Ω VGS=-4.5V, I D=-0.61A VGS=-2.7V, I D=-0.31A Forward Transconductance (1)(3) g fs 0.56 S V DS=-10V,I D=-0.31A DYNAMIC (3) Input Capacitance C iss 150 pF VDS=-15V, V GS=0V, f=1MHzOutput Capacitance C oss 70 pF Reverse Transfer Capacitance C rss 30 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 2.9 ns VDD =-10V, I D=-0.93A RG=6.0 Ω,R D=11 /H9024 (Refer to test circuit) Rise Time t r 6.7 ns Turn-Off Delay Time t d(off) 11.2 ns Fall Time t f 10.2 ns Total Gate Charge Q g 5.2 3.5 nC VDS=-16V,V GS=-4.5V, ID=-0.61A (Refer to test circuit) Gate-Source Charge Q gs 0.5 nC Gate-Drain Charge Q gd 1.5 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.95 V T J=25°C, I S=-0.61A, VGS=0V Reverse Recovery Time (3) t rr 14.9 ns T J=25°C, I F=-0.61A, di/dt= 100A/ µsReverse Recovery Charge (3) Q rr 5.6 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - MAY 2002 TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE A - MAY 2002 B a s i cG a t eC h a r g eW a v e f o r m Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit

Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex plc 2002 ZXMP62M832 PROVISIONAL ISSUE A - MAY 2002 CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) DIM MILLIMETRES INCHES DIM MILLIMETRES INCHES b1 0.17 0.30 0.0066 0.0118 L2 0.125 0.00 0.005 D 3.00 BSC 0.118 BSC 0.075 BSC 0.0029 BSC D2 0.82 1.02 0.032 0.040 /H9052 0/H1103412/H110340/H1103412/H11034 D3 1.01 1.21 0.0397 0.0476 MLP832 PACKAGE DIMENSIONS