ZXMP4A16K_06 ZETEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Low on-resistance  Fast switching speed  Low threshold  Low gate drive  DPAK package

Applications

D C - D C c o n v e r t e r s  Audio output stages  Relay and solenoid driving  Motor control

Ordering information

(inches) Tape width Quantity per reel ZXMP4A16KTC 13 16mm 2500 units D S G Pinout - Top view

Issue 1 - March 2006 2 www.zetex.com © Zetex Semiconductors plc 2006 Absolute maximum rating NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR 4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 /H9262s - pulse width limited by maximum junction temperature. (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Parameter Symbol Limit Unit Drain-source voltage V DSS -40 V Gate-source voltage V GS ±20 V Continuous drain current ID VGS= -10V; TA=25°C (b) -9.9 A VGS= -10V; TA=70°C (b) -8.0 A VGS= -10V; TA=25°C (a) -6.6 A Pulsed drain current (c) IDM -35 A Continuous source current (body diode) (b) IS -10.1 A Pulsed source current (body diode) (c) ISM -35 A Power dissipation at TA=25°C (a) PD 4.2 W Linear derating factor 33.6 mW/°C Power dissipation at TA=25°C (b) PD 9.5 W Linear derating factor 76 mW/°C Power dissipation at TA=25°C (d) Linear derating factor PD 2.15 17.2 W mW/°C Operating and storage temperature range T j:Tstg -55 to +150 °C Thermal resistance Parameter Symbol Value Unit Junction to ambient (a) R/H9052JA 30 °C/W Junction to ambient (b) R/H9052JA 13.2 °C/W Junction to ambient (d) R/H9052JA 58 °C/W

Issue 1 - March 2006 3 www.zetex.com © Zetex Semiconductors plc 2006 Characteristics

Issue 1 - March 2006 4 www.zetex.com © Zetex Semiconductors plc 2006 Electrical characteristics (at TA = 25°C unless otherwise stated) Parameter Symbol Min. Ty p. Max. Unit Conditions Static Drain-source breakdown voltage V(BR)DSS -40 V I D=-250/H9262A, VGS=0V Zero gate voltage drain current I DSS -1 /H9262AV DS=-40V, VGS=0V Gate-body leakage I GSS 100 nA V GS =±20V, VDS=0V Gate-source threshold voltage V GS(th) -1.0 V I D=-250/H9262A, VDS=VGS Static drain-source on-state resistance (*) NOTES: (*) Measured under pulsed conditions. Width /H11349 300µs. Duty cycle /H11349 2%. RDS(on) 0.060 /H9024VGS=-10V, ID=-3.8A 0.100 /H9024VGS=-4.5V, ID=-2.9A Forward transconductance (*)(‡) gfs 7.4 S V DS=-15V,ID=-3.8A Dynamic (‡) Input capacitance C iss 965 pF VDS=-20V, VGS=0V, f=1MHzOutput capacitance C oss 180 pF Reverse transfer capacitance C rss 158 pF Switching (†) (‡) (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Turn-on delay time t d(on) 4.0 ns VDD =-20V, ID=-1A RG=6.0/H9024,VGS=-10V Rise time t r 6.0 ns Turn-off delay time t d(off) 36.8 ns Fall time t f 17.1 ns Gate charge Q g 16.5 nC V DS=-20V,VGS=-5V, ID=-3.8A Total gate charge Q g 29.6 nC VDS=-20V,VGS=-10V, ID=-3.8AGate-source charge Q gs 2.8 nC Gate-drain charge Q gd 8.1 nC Source-drain diode Diode forward voltage (*) VSD -0.89 -1.2 V T J=25°C, IS=-3.8A, VGS=0V Reverse recovery time (‡) trr 29.8 ns TJ=25°C, IF=-3.8A, di/dt= 100A//H9262s Reverse recovery charge (‡) Qrr 37.2 nC

Issue 1 - March 2006 5 www.zetex.com © Zetex Semiconductors plc 2006 Typical characteristics

Issue 1 - March 2006 6 www.zetex.com © Zetex Semiconductors plc 2006 Typical characteristics Current regulator Charge Gate charge test circuit Switching time test circuit Basic gate charge waveform Switching time waveforms D.U.T 50k0.2/H9262F12V Same as D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on) t(on) td(on)trtr td(off) VDS VCC RD RG Pulse width /H11021 1/H9262S Duty factor 0.1% VDS ID IG

Issue 1 - March 2006 7 www.zetex.com © Zetex Semiconductors plc 2006 Intentionally left blank

Issue 1 - March 2006 8 www.zetex.com © Zetex Semiconductors plc 2006 For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Highway

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Package details - DPAK Package dimensions Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Dim. Inches Millimeters Dim. Inches Millimeters D1 0.205 - 5.21 - /H90521° 0° 10° 0° 10° E 0.250 0.265 6.35 6.73 /H9052° 0° 15° 0° 15°