ZXMP3F30FH ZETEX | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • Low on-resistance
  • Fast switching speed
  • 4.5V gate drive capability
  • Thermally enhanced SOT23 package

Applications

  • Power management
  • Portable Equipment
  • Battery charging

Ordering information

(inches) Tape width (mm) Quantity per reel ZXMP3F30FHTA 7” 8mm 3,000 Pinout – top view Device marking KPA I Issue 1 - August 2008 1 © Diodes Incorporated www.zetex.com www.diodes.com

Parameter Symbol Limit Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGS ±20 V Continuous Drain current @ VGS= -10V; TA=25°C (b) @ VGS= -10V; TA=70°C (b) @ VGS= -10V; TA=25°C (a) @ VGS= -10V; TL=25°C (d) ID -3.4 -2.7 -2.8 -4.0 V Pulsed Drain current (c) IDM -15.3 A Continuous Source current (Body diode) (b) IS -2 A Pulsed Source current (Body diode) (c) ISM -15.3 A Power dissipation at TA =25°C (a) Linear derating factor PD 0.95 7.6 W mW/°C Power dissipation at TA =25°C (b) Linear derating factor PD 1.4 11.2 W mW/°C Power dissipation at TL =25°C (d) Linear derating factor PD 1.96 15.7 W mW/°C Operating and storage temperature range Tj, Tstg -55 to 150 °C Thermal resistance Parameter Symbol Value Unit Junction to ambient (a) RθJA 131 °C/W Junction to ambient (b) RθJA 89 °C/W Junction to lead (d) RθJL 63.77 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on FR4 PCB measured at t ≤ 10 sec. (c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. (d) Thermal resistance from junction to sol der-point (at the end of the drain lead). Issue 1 - August 2008 2 © Diodes Incorporated www.zetex.com www.diodes.com

Tamb=25°C 25mm x 25mm 1oz FR4 RDS(on) Limit 100µs 1ms 10ms 100ms 1sDC Safe Operating Area -ID Drain Current (A) -VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 25mm x 25mm 1oz FR4 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k 100 120 Tamb=25°C 25mm x 25mm 1oz FR4 Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 100 25mm x 25mm 1oz FR4 Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Max Power Dissipation (W) Issue 1 - August 2008 3 © Diodes Incorporated www.zetex.com www.diodes.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symb ol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage V(BR)DSS -30 V ID = -250μA, VGS=0V Zero Gate voltage Drain current IDSS -1.0 µA VDS=-30V, VGS=0V Gate-Body leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-Source threshold voltage VGS(th) -1.0 V ID= -250μA, VDS=VGS Static Drain-Source on-state resistance (*) RDS(on) 0.080 0.140 Ω VGS= -10V, ID= -2.5A VGS= -4.5V, ID= -1.9A Forward Transconductance (*) (†) gfs 5 S VDS= -15V, ID= -3A Dynamic (†) Input capacitance Ciss 370 pF Output capacitance Coss 72 pF Reverse transfer capacitance Crss 38 pF VDS= -15V, VGS=0V f=1MHz Switching (‡) (†) Turn-on-delay time td(on) 1.3 ns Rise time tr 2.6 ns Turn-off delay time td(off) 49 ns Fall time tf 22 ns V DD= -15V, VGS= -10V ID= -1A RG ≅ 6.0Ω, Gate charge Total Gate charge Qg 7 nC Gate-Source charge Qgs 1.2 nC Gate-Drain charge Qgd 1.3 nC V DS= -15V, VGS= -10V ID= -3A Source–Drain diode Diode forward voltage (*) VSD -0.80 -1.2 V IS= -1.7A,VGS=0V Reverse recovery time (‡) trr 14.6 ns Reverse recovery charge(‡) Qrr 9.5 nC IS= -1.5A,di/dt=100A/μs NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - August 2008 4 © Diodes Incorporated www.zetex.com www.diodes.com

0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 234 0.1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.1 1E-3 0.01 0.1 5V10V 3.5V 4.5V Output Characteristics T = 25°C VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 10V 4.5V7V 2.5V 3.5V Output Characteristics T = 150°C VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = 10V T = 25°C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 3A VGS(th) VGS = VDS ID = 250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 10V 3.5V On-Resistance v Drain Current T = 25°C 4.5V VGS RDS(on) Drain-Source On-Resistance (Ω) -ID Drain Current (A) Vgs = 0V T = 150°C T = 25°C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A) Issue 1 - August 2008 5 © Diodes Incorporated www.zetex.com www.diodes.com

© Diodes Incorporated www.zetex.com www.diodes.com 11 0 100 200 300 400 500 600 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) -VDS - Drain - Source Voltage (V) 01234567 ID = 3A VDS = 15V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) Test Circuits

Packaging Details – SOT23 Issue 1 - August 2008 7 © Diodes Incorporated www.zetex.com www.diodes.com

Diodes Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assum ed by Diodes Inc. with respect to the accuracy or use of su ch information, or infringement of patents or other intellectual property rights arisi ng from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort ( including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Diodes Inc. products are specifically not authorized for use as critical components in life suppor t devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support devic e or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduc ed for any purpose or form part of any or der or contract or be regarded as a repre sentation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Diodes Zetex terms and condition s of sale, and this disclaimer (save in the event of a confli ct between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office. Quality of product Diodes Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the pur chase of parts directly from Diodes Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suit able precautions should be taken when handling and transporting dev ices. The possible damage to devices depends on the circumstances of the hand ling and transporting, and the nature of the device. The ext ent of damage can vary from immediate functional or param etric malfunction to degradation of function or performance in use over time. Device s suspected of being affected should be replaced. Green compliance Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to t he use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: “Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Zetex sales offices Europe Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Diodes Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Diodes Incorporated 15660 N. Dallas Parkway Suite 850 Dallas, TX75248, USA www.diodes.com © 2008 Published by Diodes Incorporated Issue 1 - August 2008 8 © Diodes Incorporated www.zetex.com www.diodes.com