ZXMP3A16N8 ZETEX | Alldatasheet

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Technical content

V(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

APPLICATIONS

PROVISIONAL ISSUE A - JULY 2002 30V P-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP3A16N8TA 12mm 500 units ZXMP3A16N8TC 13” 12mm 2500 units

ORDERING INFORMATION

PROVISIONAL ISSUE A - JULY 2002 PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA °C/W Junction to Ambient (b) RθJA °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS -30 V Gate Source Voltage VGS V Continuous Drain Current VGS=-10V; TA=25°C (b) VGS=-10V; TA=70°C (b) VGS=-10V; TA=25°C (a) ID -6.7 -5.4 -5.6 A Pulsed Drain Current (c) IDM -26 A Continuous Source Current (Body Diode) (b) IS -3.2 A Pulsed Source Current (Body Diode) (c) ISM -26 A Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.9 15.2 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 2.8 22.4 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 ABSOLUTE MAXIMUM RATINGS.

PROVISIONAL ISSUE A - JULY 2002 10m 100m SinglePulse Tamb=25°C RDS(on) Limited 100µs 1ms 10ms 100ms DC SafeOperatingArea -ID DrainCurrent (A) -VDS Drain-SourceVoltage(V) 100 120 140 160 0.0 0.4 0.8 1.2 1.6 2.0 DeratingCurve Temperature(°C) MaxPower Dissipation(W) 100µ 10m 100m 100 Tamb=25°C Transient Thermal Impedance D=0.5 D=0.2 D=0.1 SinglePulse D=0.05 Thermal Resistance(°C/W) PulseWidth(s) 100µ 10m 100m 100 100 SinglePulse Tamb=25°C PulsePower Dissipation PulseWidth(s) MaximumPower (W) CHARACTERISTICS

PROVISIONAL ISSUE A - JULY 2002 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V Zero Gate Voltage Drain Current IDSS -1.0 A VDS=-30V, VGS=0V Gate-Body Leakage IGSS 100 nA VGS=20V, VDS=0V Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250A,VDS= VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.040 0.070 VGS=-10V, ID=-4.2A VGS=-4.5V, ID=-3.4A Forward Transconductance (1)(3) gfs 9.2 S VDS=-15V,ID=-4.2A DYNAMIC (3) Input Capacitance Ciss 970 pF VDS=-15 V, VGS=0V, f=1MHz Output Capacitance Coss 166 pF Reverse Transfer Capacitance Crss 116 pF SWITCHING(2) (3) Turn-On Delay Time td(on) 1.95 ns VDD =-15V, ID=-1A RG=6.0Ω, VGS=-10V Rise Time tr 3.82 ns Turn-Off Delay Time td(off) 31.8 ns Fall Time tf 10.2 ns Gate Charge Qg 12.9 nC VDS=-15V,VGS=-5V, ID=-4.2A Total Gate Charge Qg 24.9 nC VDS=-15V,VGS=-10V, ID=-4.2A Gate-Source Charge Qgs 2.67 nC Gate-Drain Charge Qgd 3.86 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -0.95 V TJ=25°C, IS=-3.6A, VGS=0V Reverse Recovery Time (3) trr 21.2 ns TJ=25°C, IF=-2A, di/dt= 100A/µs Reverse Recovery Charge (3) Qrr 18.7 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - JULY 2002 0.1 0.01 0.1 0.1 0.01 0.1 0.1 -50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 0.01 0.1 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 100 1.5V 10V 3.5V -VGS 2.5V Output Characteristics T=25°C -VGS -ID DrainCurrent (A) -VDS Drain-SourceVoltage(V) 3.5V 1.5V 10V 2.5V Output Characteristics T=150°C -ID DrainCurrent (A) -VDS Drain-SourceVoltage(V) Typical Transfer Characteristics -VDS =10V T=25°C T=150°C -ID DrainCurrent (A) -VGS Gate-SourceVoltage(V) NormalisedCurvesvTemperature RDS(on) VGS =-10V ID =-4.2A VGS(th) VGS =VDS ID =-250uA NormalisedRDS(on)andVGS(th) Tj JunctionTemperature(°C) 1.5V 10V 3.5V 2.5V On-ResistancevDrainCurrent T=25°C -VGS RDS(on)Drain-SourceOn-Resistance(Ω) -ID DrainCurrent (A) T=150°C T=25°C Source-DrainDiodeForwardVoltage -VSD Source-DrainVoltage(V) -ISD ReverseDrainCurrent (A) CHARACTERISTICS

PROVISIONAL ISSUE A - JULY 2002 B ASIC G ATE C HARGE W AVEFORM G ATE C HARGE TEST C IRCUIT S WI TCHING TIME W AVEFORMS S WI TCHING TIME TEST C IRCUIT C HARGE Q G S Q G D Q G 10V V G V V D S G S 12V 0.2µ F 50K 0.3µ F ID IG C URRENT R EGULATOR S AME AS D .U .T D .U .T V D S V G S 90% 10% TR TF TD(OFF) TD(ON) R G V G S R D V D S V CC P ULSE W IDTH < 1µ S D UTY FACTOR 0.1% 0.1 200 400 600 800 1000 1200 1400 CRSS COSS CISS VGS =0V f =1MHz C Capacitance(pF) -VDS - Drain- SourceVoltage(V) -ID =4.2A -VDS =15V Gate-SourceVoltagevGateCharge CapacitancevDrain-SourceVoltage Q- Charge(nC) -VGS Gate-SourceVoltage(V) CHARACTERISTICS

PROVISIONAL ISSUE A - JULY 2002 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uk.sales@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex plc 2002 DIM INCHES MILLIMETRES MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 e

0.050 BSC

1.27 BSC

b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 h 0.010 0.020 0.25 0.50 PACKAGE DIMENSIONS PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES