ZXMP3A16G ZETEX | Alldatasheet

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Technical content

V(BR)DSS = -30V: RDS(on) = 0.045 : ID = -7.5A

DESCRIPTION

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

/c183Low on-resistance /c183Fast switching speed /c183Low threshold /c183Low gate drive /c183SOT223 package

APPLICATIONS

/c183DC-DC converters /c183Power management functions /c183Relay and soleniod driving /c183Motor control DEVICE MARKING /c183ZXMP 3A16 ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET ISSUE 2 - JULY 2004 DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP3A16GTA 7” 12mm 1000 units ZXMP3A16GTC 13” 12mm 4000 units

ORDERING INFORMATION

PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate-Source Voltage V GS /H1100620 V Continuous Drain Current (V GS= -10V; T A=25°C)(b) (VGS= -10V; T A=70°C)(b) (VGS= -10V; T A=25°C)(a) ID -7.5 -6.0 -5.4 A Pulsed Drain Current (c) I DM -24.9 A Continuous Source Current (Body Diode) (b) I S -3.2 A Pulsed Source Current (Body Diode)(c) I SM -24.9 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 2.0 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 3.9 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 62.5 °C/W Junction to Ambient (b) R θJA 32.2 °C/W THERMAL RESISTANCE NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H1108810 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.

Tamb=25°C RDS(on) Limited 100µs1ms 10ms 100ms1s DC Safe Operating Area -ID Drain Current (A) -VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 1600.0 0.4 0.8 1.2 1.6 2.0 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k0 Tamb=25°C Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k1 100 Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Maximum Power (W) TYPICAL CHARACTERISTICS

PARAMETER SYMBOL MIN. TYP . MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V ID=-250 µA, V GS=0V Zero Gate Voltage Drain Current I DSS -1 /H9262AV DS=-30V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V I D=-250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) R DS(on) 0.045 0.070 /H9024 /H9024 VGS=-10V, I D=-4.2A VGS=-4.5V, I D=-3.4A Forward Transconductance (1)(3) g fs 9.2 S V DS=-15V,I D=-4.2A DYNAMIC (3) Input Capacitance C iss 970 pF VDS=-15V, V GS=0V, f=1MHzOutput Capacitance C oss 169 pF Reverse Transfer Capacitance C rss 116 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 3.8 ns VDD =-15V, I D=-1A RG=6.0 /H9024, VGS=-10V Rise Time t r 6.1 ns Turn-Off Delay Time t d(off) 35 ns Fall Time t f 19 ns Gate Charge Q g 12.9 nC V DS=-15V,V GS=-5V, ID=-4.2A Total Gate Charge Q g 24.9 nC VDS=-15V,V GS=-10V, ID=-4.2AGate-Source Charge Q gs 2.67 nC Gate-Drain Charge Q gd 3.86 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.85 -0.95 V T J=25 /H11034C, I S=-3.6A, VGS=0V Reverse Recovery Time (3) t rr 21.2 ns T J=25 /H11034C, I F=-2A, di/dt= 100A/ /H9262s Reverse Recovery Charge (3) Q rr 18.7 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width /H11349300µ s. Duty cycle /H113492% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

0.1 1 100.01 0.1 0.1 1 100.01 0.1 1230.1 -50 0 50 100 1500.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 100.01 0.1 100 0.1 100 1.5V 10V 4V 3.5V -VGS 2.5V Output Characteristics T=2 5 ° C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 4V 3.5V 1.5V 10V 2.5V Output Characteristics T = 150°C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS=1 0 V T=2 5 ° C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS=- 1 0 V ID =- 4 . 2 A VGS(th) VGS=VDS ID = -250uA Normalised RDS(on)and VGS(th) Tj Junction Temperature (°C) 1.5V 10V 3.5V 2.5V On-Resistance v Drain Current T=2 5 ° C -VGS RDS(on)Drain-Source On-Resistance(Ω) -ID Drain Current (A) T = 150°C T=2 5 ° C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A) TYPICAL CHARACTERISTICS

Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit Charge QGS QGD QG 10V VG V VDS GS 12V 0.2µF 50k 0.3µF ID IG Current Regulator Same as D.U.T D.U.T VDS VGS 90% 10% tr tftd(off)td(on) RG VGS RD VDS Vcc -10V Pulse Width < 1µS Duty Factor 0.1%£ 0.1 1 100 200 400 600 800 1000 1200 1400 CRSS COSS CISS VGS=0 V f=1 M H z C Capacitance (pF) -VDS -D r a i n-S o u r c eV o l t a g e( V ) 0 5 10 15 20 250 -ID =4 . 2 A -VDS= 15V G a t e - S o u r c eV o l t a g evG a t eC h a r g eCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) CHARACTERISTICS

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2004 PAD LAYOUT DETAILSPACKAGE OUTLINE DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC PACKAGE DIMENSIONS