ZXMP3A16DN8_07 ZETEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

V(BR)DSS = -30V; RDS(ON) = 0.045 ;I D= -5.5A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • Motor Drive
  • LCD backlighting DEVICE MARKING ZXMP 3A16 ZXMP3A16DN8 ISSUE 2 - MAY 2007 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMP3A16DN8TA 7 ’‘ 12mm 500 units ZXMP3A16DN8TC 13’‘ 12mm 2500 units

ORDERING INFORMATION

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) RθJA 100 °C/W Junction to Ambient (b)(e) RθJA 70 °C/W Junction to Ambient (b)(d) RθJA 60 °C/W THERMAL RESISTANCE Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate-Source Voltage V GS /H1100620 V Continuous Drain Current@V GS=10V; T A=25 /H11034C (b)(d) @VGS=10V; T A=70 /H11034C (b)(d) @VGS=10V; T A=25 /H11034C (a)(d) ID -5.5 -4.4 -4.2 A A A Pulsed Drain Current (c) IDM -20 A Continuous Source Current (Body Diode) (b) IS -3.2 A Pulsed Source Current (Body Diode) (c) ISM -20 A Power Dissipation at T A=25°C (a)(d) Linear Derating Factor PD 1.25 W mW/°C Power Dissipation at T A=25°C (a)(e) Linear Derating Factor PD 1.8 W mW/°C Power Dissipation at T A=25°C (b)(d) Linear Derating Factor PD 2.1 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

Tamb=25°C One active die RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area -ID Drain Current (A) -VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 1600.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Two active die One active die Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k0 100 110 Tamb=25°C O n ea c t i v ed i e Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 100 Single Pulse Tamb=25°C O n ea c t i v ed i e Pulse Power Dissipation Pulse Width (s) Maximum Power (W) CHARACTERISTICS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V ID=-250 μA, V GS=0V Zero Gate Voltage Drain Current I DSS -1.0 /H9262AV DS=-30V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V I D=-250 /H9262A, VDS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.045 0.070 /H9024 /H9024 VGS=-10V, I D=-4.2A VGS=-4.5V, I D=-3.4A Forward Transconductance (1)(3) gfs 9.2 S V DS=-15V,I D=-4.2A DYNAMIC (3) Input Capacitance C iss 1022 pF VDS=-15 V, V GS=0V, f=1MHzOutput Capacitance C oss 267 pF Reverse Transfer Capacitance C rss 229 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 3.8 ns VDD =-15V, I D=-1A RG=6.0 Ω,V GS=-10V Rise Time t r 6.5 ns Turn-Off Delay Time t d(off) 37.1 ns Fall Time t f 21.4 ns Gate Charge Q g 17.2 nC V DS=-15V,V GS=-5V, ID=-4.2A Total Gate Charge Q g 29.6 nC VDS=-15V,V GS=-10V, ID=-4.2AGate-Source Charge Q gs 2.8 nC Gate-Drain Charge Q gd 8.6 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -0.95 V T J=25°C, I S=-3.6A, VGS=0V Reverse Recovery Time (3) trr 21.7 ns T J=25°C, I F=-2A, di/dt= 100A/ μs Reverse Recovery Charge (3) Qrr 16.1 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Width ≤300μs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

0.1 1 100.01 0.1 0.1 1 100.01 0.1 1230.1 -50 0 50 100 1500.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 100.01 0.1 100 0.1 100 1.5V 10V 4V 3.5V -VGS 2.5V Output Characteristics T=2 5 ° C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 4V 3.5V 1.5V 10V 2.5V Output Characteristics T = 150°C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS=1 0 V T = 25°C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS=- 1 0 V ID = -4.2A VGS(th) VGS=VDS ID = -250uA Normalised RDS(on)and VGS(th) Tj Junction Temperature (°C) 1.5V 10V 3.5V 2.5V On-Resistance v Drain Current T=2 5 ° C -VGS RDS(on)Drain-Source On-Resistance(Ω) -ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A) TYPICAL CHARACTERISTICS

Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview"Future device intended for production at some point. Samples may be available "Active"Product status recommended for new designs "Last time buy (LTB)"Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs"Device is still in production to support existing designs and production "Obsolete"Production has been discontinued Datasheet status key: "Draft version"This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version"This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue"This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice.

Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com © Zetex Semiconductors plc 2007 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max H 5.80 6.20 0.228 0.244 /H90520° 8° 0° 8° PACKAGE DIMENSIONS