ZXMP3A13F ZETEX | Alldatasheet

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Technical content

V(BR)DSS = -30V; RDS(ON) = 0.21 ID = -1.6A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23 package

APPLICATIONS

  • DC - DC converters
  • Power management functions
  • Disconnect switches
  • Motor control DEVICE MARKING
  • 313 ZXMP3A13F PROVISIONAL ISSUE C - JULY 2004 30V P-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP3A13FTA 7” 8mm 3000 units ZXMP3A13FTC 13” 8mm 10000 units

ORDERING INFORMATION

PROVISIONAL ISSUE C - JULY 2004 PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H110885 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10/H9262s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate Source Voltage V GS 20 V Continuous Drain Current V GS=10V; T A=25°C (b) VGS=10V; T A=70°C (b) VGS=10V; T A=25°C (a) ID -1.6 -1.3 -1.4 A Pulsed Drain Current (c) I DM -6 A Continuous Source Current (Body Diode) (b) I S -1.2 A Pulsed Source Current (Body Diode) (c) I SM -6 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 625 mW mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

PROVISIONAL ISSUE C - JULY 2004 100m 1 10 10m 100m Single Pulse Tamb=25°C RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area -ID Drain Current (A) -VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 1600.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k0 100 150

200 Tamb=25°C

Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Maximum Power (W) CHARACTERISTICS

PROVISIONAL ISSUE C - JULY 2004 PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V I D=-250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS -0.5 /H9262AV DS=-30V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V I D=-250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) R DS(on) 0.210 0.330 /H9024 /H9024 VGS=-10V, I D=-1.4A VGS=-4.5V, I D=-1.1A Forward Transconductance (1)(3) g fs 2.48 S V DS=-15V,I D=-1.4A DYNAMIC (3) Input Capacitance C iss 204 pF VDS=-15V, V GS=0V, f=1MHzOutput Capacitance C oss 39.8 pF Reverse Transfer Capacitance C rss 25.8 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.5 ns VDD =-15V, I D=-1A RG=6.0 /H9024,V GS=-10V Rise Time t r 2.8 ns Turn-Off Delay Time t d(off) 11.3 ns Fall Time t f 7.5 ns Gate Charge Q g 2.58 nC V DS=-15V,V GS=-5V, ID=-1.4A Total Gate Charge Q g 5.15 nC VDS=-15V,V GS=-10V, ID=-1.4AGate-Source Charge Q gs 0.65 nC Gate-Drain Charge Q gd 0.92 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.85 -0.95 V T J=25°C, I S=-1.1A, VGS=0V Reverse Recovery Time (3) t rr 18.6 ns T J=25°C, I F=-0.95A, di/dt= 100A/ µsReverse Recovery Charge (3) Q rr 14.8 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE C - JULY 2004 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 12345 0.1 -50 0 50 100 1500.6 0.8 1.0 1.2 1.4 1.6 0.1 1 100.1 100 0.1 10V 3.5V -VGS 2.5V Output Characteristics T=2 5 ° C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 5V 4V 3.5V 1.5V 10V 2.5V Output Characteristics T = 150°C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS=1 0 V T=2 5 ° C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS=- 1 0 V ID =- 1 . 4 A VGS(th) VGS=VDS ID = -250uA Normalised RDS(on)and VGS(th) Tj Junction Temperature (°C) 10V 3.5V 2.5V On-Resistance v Drain Current T=2 5 ° C -VGS RDS(on)Drain-Source On-Resistance(Ω) -ID Drain Current (A) T = 150°C T=2 5 ° C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A) TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE C - JULY 2004 0.1 1 100 100 150 200 250 300 CRSS COSS CISS VGS=0 V f=1 M H z C Capacitance (pF) -VDS -D r a i n-S o u r c eV o l t a g e( V ) 02460 ID = -1.4A VDS= -15V G a t e - S o u r c eV o l t a g evG a t eC h a r g eCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE C - JULY 2004 Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2004 PACKAGE OUTLINE PAD LAYOUT DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Max Max G 1.90 NOM 0.075 NOM /H5007/H5007 /H5007 PACKAGE DIMENSIONS