ZXMP2120FFTA

ZXMP2120FFTA VBSEMI | Alldatasheet

Document overview

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Technical content

P-Channel 200V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET TO-236 (SOT-23)
• Ultra Low On-Res istance
• Small Si ze

APPLICATIONS

• Active Cla mp Circuits in DC/DC Power Supplies G D S Top View ABSOLUTE MAXIMUM RAT INGS TA = 25 °C , unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS - 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C ID - 0.80 - 0. A TA = 70 °C - 0.70 - 0.51 Pulsed Drain Current IDM - 2.5 Continuous Source Current (Diode Conduction)a, b IS - 1.0 - 0.6 Single Pulse Avalanche Current L = 1.0 mH IAS 4.0 Single Pulse Avalanche Energy EAS 1.2 mJ Maximum Power Dissipationa, b TA = 25 °C PD 1.45 0. W TA = 70 °C 0.8 0.48 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESI STANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t  5 s RthJA 75 100 °C/W Steady State 120 166 Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 Notes: a. Surfac e Mounted on 1" x 1" FR4 board. b. Pulse w idth limited by maximum junction temperature. PRODUCT SUMMARY VDS (V) RDS(on) ( ) ID (A) Qg (Typ. - 200 0.8 at VGS = - 10 V - 0.80 8.0 0.9 at VGS = - 6.0 V - 0.70 ZXMP2120FFTA www.VBsemi.com Ω g A ll data sheet.com

www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 µA - 200 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.5 - 4.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 200 V, VGS = 0 V - 1 µA VDS = - 200 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS  - 15 V, VGS = 10 V - 1.0 A Drain-Source On-Resistancea RDS(on) VGS  - 10 V, ID = - 0.5 A 0.80 Forward Transconductancea gfs VDS = - 15 V, ID = - 0.5 A 1.8 S Diode Forward Voltage VSD IS = - 1.0 A, VGS = 0 V - 0.85 - 1.2 V Dynamicb Total Gate Charge Qg VDS = - 100 V, VGS = 10 V ID  - 0.5 A 8.0 12 nC Gate-Source Charge Qgs 1.3 Gate-Drain Charge Qgd 2.5 Gate Resistance Rg f = 1.0 MH z 8.0  Input Capacitance Ciss VDS = - 25 V, VGS = 0 V, f = 1 MHz 370 510 pF Output Capacitance Coss 28 Reverse Transfer Capacitance Crss 16 Switchingc Turn-On Time td(on) VDD = - 100 V, RL = 100  ID  - 1.0 A, VGEN = - 10 V Rg = 6  8 12 ns tr 11 17 Turn-Off Time td(off) 16 25 tf 11 17 Body Diode Reverse Recovery Charge Qrr IF = 0.5 A, dI/dt = 100 A/µs 140 200 nC Notes: a. Pulse t est: PW  300 µs duty cycle  2 %. b. For DESI GN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Ω Ω Ω g A ll data sheet.com

ERISTICS 25 ° C, unless otherwise noted 2.5 2.0 1.5 1.0 0.5 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) Output Characteristics 0.0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 500 400 300 200 100 0.0 ID - Drain Current (A) On-Resistance vs. Drain Current 0 30 60 90 120 150 VDS - Drain-to-Source Voltage (V) Capacitance 10 2.2 8 1.9 1.6 1.3 1.0 2 0.7 0 1 2 3 4 5 6 7 8 Qg - Total Gate Charge (nC) Gate Charge 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature VGS = 10 thru 5 V 4 V VGS = 10 V ID = 0.5 A I D - Drain Current (A) R - On-Resistance ( ) V - Gate- to-Source Voltage (V)GS DS(o RDS(o n) - On-Resistance (Normalized) C - Capacitance (pF) I D - Drain Current (A) TC = 125 °C 25 °C - 55 °C VGS = 6 V VGS = 10 V Ciss Crss Coss VDS = 10 V ID = 0.5 A ZXMP2120FFTA www.VBsemi.com Ω g A ll data sheet.com

RDS(o n) - On-Resistance () TYPICAL CHARACT ERISTICS 25 ° C, unless otherwise noted 3 6 1 5 0.1 0.01 0 0 .2 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 1.0 0.7 0.4 0.1 - 0.2 - 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Threshold Voltage 0.1 0.01 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area IDM Limited 10 µs 100 µs Limited by RDS(on)* 1 ms 10 ms 100 ms TA = 25 °C Single Pulse 10 s, 1 s DC, 100 s BVDSS Limited I S - Sour ce Current (A) VGS(th) Variance (V) I D - Drain Current (A) TJ = 150 °C TJ = 25 °C ID = 250 µA ZXMP2120FFTA www.VBsemi.com ID = 0.5 A Single Pulse Po wer 0.01 10 6000.1 Power (W) Time (s) 100 TA = 25 °C g A ll data sheet.com

.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.1 0.0 10-4 10-3 10- 2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5

0.2 Notes:

0.1 PDM

0.05 t1 0.02 1. Duty Cycle, D = t2 Single Pulse 2. Per Unit Base = RthJA = 120 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Norma lized Effective Transient Thermal Impedance g A ll data sheet.com

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