ZXMP2120FF ZETEX | Alldatasheet

Document overview

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  • PDF pages: 10

Technical content

Features

  • High voltage  Low on-resistance  Fast switching speed  Low gate drive  Low threshold  SOT23 FLAT package

Applications

 Active clamping of primary side MOSFETs in 48 volt DC-DC converters

Ordering information

V(BR)DSS RDS(on) (/H9024)I D (mA) -200 28 @ V GS= -10V -137 Device Reel size (inches) Tape width (mm) Quantity per reel ZXMP2120FFTA 7 8 3,000 D S G D Top view S G

Issue 1 - January 2007 2 www.zetex.com © Zetex Semiconductors plc 2007 Absolute maximum ratings NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 pcb measured at t /H113495 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 /H9262s - pulse width limited by maximum junction temperature. Parameter Symbol Limit Unit Drain-source voltage V DSS -200 V Gate-source voltage V GS ± 20 V Continuous drain current @ VGS= 10V; Tamb=25°C(a) ID -137 mA Pulsed drain current(c) IDM -0.8 A Pulsed source current (body diode)(c) ISM -0.8 A Power dissipation at Tamb=25°C(a) PD 1W Linear derating factor 8 mW/°C Power dissapation at Tamb=25°C(b) PD 1.5 W Linear derating factor 12.3 mW/°C Operating and storage temperature range T j, Tstg -55 to +150 °C Thermal resistance Parameter Symbol Limit Unit Junction to ambient(a) R/H9052JA 125 °C/W Junction to ambient(b) R/H9052JA 81 °C/W

Issue 1 - January 2007 3 www.zetex.com © Zetex Semiconductors plc 2007 Thermal characteristics

Issue 1 - January 2007 4 www.zetex.com © Zetex Semiconductors plc 2007 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Max. Unit Conditions Static Drain-source breakdown voltage V(BR)DSS -200 V I D= 1mA, VGS=0V Zero gate voltage drain current I DSS -10 /H9262AV DS= -200V, VGS=0V -100 /H9262A VDS= -160V, VGS=0V, T=125C(‡) Gate-body leakage I GSS 20 nA V GS=±20V, VDS=0V Gate-source threshold voltage V GS(th) -1.5 -3.5 V I D= 250/H9262A, VDS=VGS Static drain-source on-state resistance (*) NOTES: (*) Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. RDS(on) 28 /H9024VGS= -10V, ID= -150mA On-state drain current(*) ID(on) -300 mA V DS= -25V, VGS=-10V Forward transconductance(*) (‡) gfs 50 mS V DS= -25V, ID= -150mA Dynamic(‡) Input capacitance C iss 100 pF V DS= -25V, VGS=0V f=1MHzOutput capacitance C oss 25 pF Reverse transfer capacitance C rss 7p F Switching (†) (‡) (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Turn-on-delay time t d(on) 7n s V DD= -25V, VGS= -10V ID= -150mA RSOURCE ≈ 50/H9024 Rise time t r 15 ns Turn-off delay time t d(off) 12 ns Fall time t f 15 ns

Issue 1 - January 2007 5 www.zetex.com © Zetex Semiconductors plc 2007 Typical charateristics scitsiretcarahC tuptuO V SD ecruoS niarD - )stloV( egatloV ID(O n)-On-State Drain Current (Amps) scitsiretcarahC refsnarT R desilamroN )no(SD V dna )ht(SG erutarepmeT sv No rmal ise d R DS (on) and V GS( th) 04- 08060402002- 021 061041001 4.2 2.2 0.2 8.1 6.1 4.1 2.1 0.1 6.0 8.0 iarD n-Sou cr R e esis at nceR (SD on) aG te Thresho dl Volt ga e V SG ( ht ) I -=D A1.0 scitsiretcarahC noitarutaS 41- 21- 01- 61- 81- 01-8-6-4-2-0 02- VDS-Drain Source Voltage (Volts) scitsiretcarahC noitarutaS egatloV V -SG egatloV ecruoS etaG )stloV( V5- V4- V01- V5- I =D - Am003 Am002- Am001- ID(On)-On-State Drain Current (Amps) V -SG ecruoS etaG )stloV( egatloV V =SG V01- I =D Am1- V =SG V SD 6.0- 4.0- 2.0- 6.2 081 V =SG V01- V7- V5.4- V6- V7- V4- V5.3- V8- V SG = V8- ID(O n)-On-State Drain Current (Amps) V SD ecruoS niarD - )stloV( egatloV egatlov ecruos-etag sv ecnatsiser-nO V SG egatloV ecruoS etaG- )stloV( RDS(ON) -Drain Source Resistance(Ω) 01-1- 001 02- I =D Am003- Am002- Am00I- V6- V5.4- V5.3- 4.0- 3.0- 1.0- 2.0- Am05- 01-8-6-4-2-0 V01- 6.0- 4.0- 2.0- V =SD V52- Am05- erutarepmeT-T )C°(

Issue 1 - January 2007 6 www.zetex.com © Zetex Semiconductors plc 2007 Typical characteristics tnerruc niard v ecnatcudnocsnarT ID spmA( tnerruC niarD - ) gfs-T rans conductance ( m 8.0-6.0-4.0-2.0-0 )Cn( egrahC-Q V =SD V52- egatlov ecruos-etag v ecnatcudnocsnarT V SG )stloV( egatloV ecruoS etaG- gfs-T ransconductanc e (mS) 01-8-6-4-2-0 V =SD V52- 03-02-01-0 V SD )stloV( egatloV ecruoS niarD- egatlov ecruos-niard v ecnaticapaC Ca pa cita nce (pF) C sso V GS-Ga te So ur ce V olta ge (Volts egatlov ecruos-etag v egrahc etaG 01- 41- 61- 21- V SD = V05- I -=D A4.0 V001- V081- 001 081 061 041 021 002 001 081 061 041 021 002 C ssi C ssr 001

Issue 1 - January 2007 7 www.zetex.com © Zetex Semiconductors plc 2007 Typical characteristics Current regulator Charge Gate charge test circuit Switching time test circuit Basic gate charge waveform Switching time waveforms D.U.T 50k0.2/H9262F12V Same as D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on) t(on) td(on)trtr td(off) VDS VCC RD RG Pulse width /H11021 1/H9262S Duty factor 0.1% VDS ID IG

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Issue 1 - January 2007 9 www.zetex.com © Zetex Semiconductors plc 2007 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Dim. Millimeters Inches Dim. Millimeters Inches e1 1.80 2.00 0.0709 0.0787 O 0° 12° 0° 12° D c A1b R bb E1 E e L A

Issue 1 - January 2007 10 www.zetex.com © Zetex Semiconductors plc 2007 Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as desi gn ideas. It is the responsibility of the user to ensure that t he circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoev er is assumed by Zetex with respect to the accuracy or use of such in formation, or infringement of patents or other intellectual prop erty rights arising from such use or otherwise. Zetex does not assume any le gal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restricti on or otherwise) for any damages, loss of profit, business, con tract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support devi ce or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issu ed to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict bet ween the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts dire ctly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunc tion to degradation of function or performance in use over ti me. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg- ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the Ro HS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: “Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production ha s been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet ver sion and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet cont aining finalized specifications. However, changes to specifications may occur, at any time and without notice. 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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com © 2007 Published by Zetex Semiconductors plc