ZXMP2120E5 ZETEX | Alldatasheet

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Technical content

200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA

DESCRIPTION

This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A 4 pin SOT223 version is also available (ZXMP2120G4).

FEATURES

  • High voltage
  • Low on-resistance
  • Fast switching speed
  • Low gate drive
  • Low threshold
  • SOT23-5 package variant engineered to increase spacing between high voltage pins.

APPLICATIONS

  • Active clamping of primary side MOSFETs in 48 volt DC-DC converters

ORDERING INFORMATION

(inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMP2120E5TA 7 8mm embossed 3,000 units DEVICE MARKING

  • P120 N/C N/C D G S PINOUT - TOP VIEW SOT23-5

PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS -200 V Gate Source Voltage V GS ±20 V Continuous Drain Current (V GS=10V; T amb =25°C) (a) ID -122 mA Pulsed Drain Current (c) IDM -0.7 A Pulsed Source Current (Body Diode) (c) ISM -0.7 A Power Dissipation at T amb =25°C (a) Linear Derating Factor PD 0.75 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 167 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H110885 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Break down Voltage V (BR)DSS -200 V I D=-1mA, V GS=0V Gate-Source Threshold Voltage V GS(th) -1.5 -3.5 V I D=-1mA, V DS=V GS Gate-Body Leakage I GSS 20 nA V GS= /H1100620V, V DS=0V Zero Gate Voltage Drain Current I DSS -10 -100 /H9262A µA VDS=-200 V, V GS=0 VDS=-160 V, V GS=0V, T=125°C (2) On-State Drain Current (1) ID(on) -300 mA V DS=-25 V, V GS=-10V Static Drain-Source On-State Resistance (1) RDS(on) 28 Ω VGS=-10V, I D=-150mA Forward Transconductance (1)(2) gfs 50 mS V DS=-25V,I D=-150mA DYNAMIC Input Capacitance (2) Ciss 100 pF VDS=-25 V, V GS=0V, f=1MHzOutput Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 7p F SWITCHING Turn-On Delay Time (2) (3) td(on) 7n s VDD =-25V, I D=-150mA Rise Time (2)(3) tr 15 ns Turn-Off Delay Time(2) (3) td(off) 12 ns Fall Time (2)(3) tf 15 ns NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%. (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.

Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2006 Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE OUTLINE 2.2 0.087 0.95 0.375 1.06 0.042 0.65 0.025 mm inches PAD LAYOUT DETAILS DIM Millimeters Inches MIN. MAX. MIN. MAX. A 0.90 1.45 0.0354 0.0570 A1 - 0.15 - 0.0059 A2 0.90 1.30 0.0354 0.0511 b 0.20 0.50 0.0078 0.0196 C 0.09 0.26 0.0035 0.0102 D 2.70 3.10 0.1062 0.1220 PACKAGE DIMENSIONS DIM Millimeters Inches MIN. MAX. MIN. MAX. E 2.20 3.20 0.0866 0.1181 E1 1.30 1.80 0.0511 0.0708 e 0.95 REF 0.0374 REF e1 1.90 REF 0.0748 REF L 0.10 0.60 0.0039 0.0236 a 0° 30° 0° 30°