ZXMP10A18KTC VBSEMI | Alldatasheet

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Technical content

P-Channel 100 V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 612 49-2-21 Definition  TrenchFET ® Power MOSFET  100 % R g and UIS Tested  Compliant to RoHS D irective 2002/95/EC

APPLICATIONS

 Power Switch  DC/DC Conver ters PRODUCT SUMMARY VDS (V) R DS(on) (Ω)I D (A) Q g (Typ.) - 100 0.250 at VGS = - 10 V - 8.8 11.70.280 at VGS = - 4.5 V - 8.0 TO-252 SGD Top View Drain Connected to T ab S G D P-Channel MOSFET Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). ABSOLUTE MAXIMUM RATINGS TC = 25 °C, un less otherwise noted Parameter Symbol Li mit Unit Drain-Source Voltage VDS - 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 8.8 A TC = 70 °C - 7.1 Pulsed Drain Current IDM - 25 Avalanche Current IAS - 18 Single Avalanche Energya L = 0.1 mH EAS 16.2 mJ Maximum P ower Dissipationa TC = 25 °C PD 32.1b W TA = 25 °Cc 2.5 Operating Junction and St orage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Li m it Unit Junction-to-Ambient (PCB Mount)c RthJA 50 °C/W Junction-to-Cas e (Drain) RthJC 3.9 TO-251 SDG Top View E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP10A18KTC A ll data sheet.com

Notes: a. Pu lse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed und er “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless o therwise noted Parameter Symbol Test Co nditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = - 250 µA - 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA Zero Gate Vo ltage Drain Current IDSS VDS = - 100 V, VGS = 0 V - 1 µAVDS = - 100 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 100 V, VGS = 0 V, TJ = 150 °C - 250 On-State Drain Currenta ID(on) V DS ≤ - 10 V, VGS = - 10 V - 15 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 3.6 A 0.250 0.279 ΩVGS = - 4.5 V, ID = - 3.4 A 0.280 0.350 Forward Transconductancea gfs VDS = - 15 V, ID = - 3.6 A 12 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = - 50 V, f = 1 MHz 1055 pFOutput Capacitance Coss 65 Reverse Transfer Capacitance Crss 41 Total Gate Chargec Qg VDS = - 50 V, VGS = - 10 V, ID = - 3.6 A 23.2 34.8 nCVDS = - 50 V, VGS = - 4.5 V, ID = - 3.6 A 11.7 17.6 Gate-Source Chargec Qgs 3.5 Gate-Drain Chargec Qgd 4.8 Gate Resistance Rg f = 1 MHz 1.2 5.7 11.5 Ω Tur n-On Delay Timec td(on) VDD = - 50 V, RL = 17.2 Ω ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω 71 4 nsRise Timec tr 12 18 Turn-Off Delay T imec td(off) 33 50 Fall Ti mec tf 91 8 Drain-Source Bod y Diode Ratings and Characteristics TC = 25 °Cb Continuous Current IS - 8.8 A Pulsed Current ISM - 15 Forward Voltagea VSD IF = - 2.9 A, VGS = 0 V - 0.8 - 1.5 V Reverse Reco very Time trr IF = - 2.9 A, dI/dt = 100 A/µs 50 75 ns Peak Re verse Recovery Current IRM(REC) - 4 - 6 A Reverse Recov ery Charge Qrr 98 147 nC E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP10A18KTC A ll data sheet.com

25 °C, unless otherwise noted Output Characteristics Transfer Characteristics Tr ansconductance 01234 VGS =1 0Vt h r u5V VGS =4V VDS - Drain-to-Source V oltage (V) - Drain Current (A)I D VGS =3V 0.0 0.4 0.8 1.2 1.6 2.0 01234 TC = 25 °C TC =1 2 5 ° C TC = - 55 °C VGS - Gate-to-Source V oltage (V) - Drain Current (A)I D 0 3 6 9 12 15 I D - Drain Current (A) - Transconductance (S)g fs TC = 125 °C TC = - 55 °C TC = 25 °C On-Resistance vs. Drain Current On-Res istance vs. Gate-to-Source Voltage Gate Charge 0.10 0.20 0.30 0.40 0.50 0 3 6 9 12 15 VGS =4 . 5V VGS =1 0V - On-Resistance (Ω)R DS(on) ID - Drain Current (A) 0.00 0.20 0.40 0.60 0.80 02468 1 0 TJ = 25 °C TJ = 150 °C - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source V oltage (V) 0 5 10 15 20 25 VDS =8 0V ID =3 . 6A VDS =5 0V VDS =2 5V - Gate-to-Source V oltage (V) Qg - Total Gate Charge (nC) VGS E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP10A18KTC A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Fo rward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain V oltage (V) - Source Current (A)I S Crss0 400 800 1200 1600 0 2 04 06 08 0 1 0 0 Ciss Coss VDS - Drain-to-Source V oltage (V) C - Capacitance (pF) 0.5 0.9 1.3 1.7 2.1 - 50 - 25 0 25 50 75 100 125 150 ID =3 . 6A VGS =4 . 5V VGS =1 0V TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) Threshold Vo ltage Drain Source Breakdown vs. Junction Temperature Current Derating - 2.3 - 2.0 - 1.7 - 1.4 - 1.1 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA (V)VGS(th) TJ - Temperature (°C) - 130 - 124 - 118 - 112 - 106 - 100 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) 0 25 50 75 100 125 150 T C - Case Temperature (°C) I D - Drain Current (A) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP10A18KTC A ll data sheet.com

25 °C, unless otherwise noted Single Pulse Avalanche Current C apability vs. Time 100 Time (s) IDAV (A) TJ = 150 °C TJ = 25 °C 10-3 10-2 10-110-410-6 10-5 Safe Operating Area 100 0.1 1 10 100 0.01

0.1 TA = 25 °C

Limited by RDS(on)* BVDSS Limited 1m s 100 μs 10 ms 1s ,1 0s ,D C VDS - Drain-to-Source V oltage (V) *V GS > minimum VGS at which RDS(on) is specified - Drain Current (A)ID Normalized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.05 Single Pulse 0.02 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP10A18KTC A ll data sheet.com

  • Dimension L3 is fo r r eference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES DIM. MI N. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP10A18KTC A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR DP AK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP10A18KTC A ll data sheet.com

Note: Dimension L3 is for reference only. b e L3 L1 L D c AE /C0084/C0079/C0262/C0050/C0053/C0049/C0065/C0065/C0032/C0040/C0068/C0080/C0065/C0075/C0041 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083/C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Max Min Max A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 E 6.48 6.73 0.255 0.265 e 2.28 BSC 0.090 BSC L 8.89 9.53 0.350 0.375 L1 1.91 2.28 0.075 0.090 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP10A18KTC A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP10A18KTC A ll data sheet.com