ZXMP10A18G ZETEX | Alldatasheet

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Technical content

1 SEMICONDUCTORS

V(BR)DSS = - 100V : RDS(on) = 0.150 ; ID = - 3.7A

DESCRIPTION

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT223 package

APPLICATIONS

  • DC-DC Converters
  • Power Management functions
  • Relay and Solenoid driving
  • Motor control DEVICE MARKING
  • ZXMP 10A18 ZXMP10A18G ISSUE 1 - MARCH 2005 100V P-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP10A18GTA 7” 12mm 1,000 units ZXMP10A18GTC 13” 12mm 4,000 units

ORDERING INFORMATION

PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a) R/H9052JA 62.5 °C/W Junction to Ambient (b) R/H9052JA 32.2 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02 pulse width = 300/H9262s - pulse width limited by maximum junction temperature. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current @ V GS=10V; TA=25°C (b) @VGS=10V; TA=70°C (b) @V GS=10V; TA=25°C (a) ID -3.7 -3.0 -2.6 A A A Pulsed Drain Current (c) IDM -16.5 A Continuous Source Current (Body Diode) (b) IS -5.3 A Pulsed Source Current (Body Diode) (c) ISM -16.5 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 2 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 3.9 W mW/°C Operating and Storage Temperature Range T j,T stg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -100 V I D= -250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS -1 /H9262AV DS= -100V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=±20V, V DS=0V Gate-Source Threshold Voltage V GS(th) -2.0 -4.0 V I D= -250 /H9262A, V DS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.150 0.190 /H9024 /H9024 VGS= -10V, I D= -2.8A VGS= -6V, I D= -2.4A Forward Transconductance (1)(3) gfs 6.0 S V DS= -15V, I D= -2.8A DYNAMIC (3) Input Capacitance C iss 1055 pF VDS= -50V, V GS=0V f=1MHz Output Capacitance C oss 90 pF Reverse Transfer Capacitance C rss 76 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 4.6 ns VDD= -50V, I D= -1A RG = 6.0 /H9024,V GS= -10V Rise Time t r 6.8 ns Turn-Off Delay Time t d(off) 33.9 ns Fall Time t f 17.9 ns Total Gate Charge Q g 26.9 nC VDS= -50V, V GS= -10V ID= -2.8AGate-Source Charge Q gs 3.9 nC Gate-Drain Charge Q gd 10.2 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -0.95 V T j=25°C, I S= -3.5A, VGS=0V Reverse Recovery Time (3) trr 49 ns T j=25°C, I S= -2.8A, di/dt=100A/ /H9262sReverse Recovery Charge (3) Qrr 107 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width /H11349300ms; duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2005 Controlling dimensions are in millimetres. Approximate conversions are given in inches PAD LAYOUT DETAILSPACKAGE OUTLINE DIM Millimetres Inches DIM Millimetres Inches Min Max Min Max Min Max Min Max F 0.24 0.32 0.009 0.13 PACKAGE DIMENSIONS