ZXMP10A13F ZETEX | Alldatasheet

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Technical content

1 SEMICONDUCTORS

V(BR)DSS = - 100V : RDS(on)= 1 ; ID = - 0.7A

DESCRIPTION

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23 package

APPLICATIONS

  • DC-DC Converters
  • Power Management functions
  • Disconnect switches
  • Motor control DEVICE MARKING
  • 7P1 ZXMP10A13F ISSUE 1 - MARCH 2005 100V P-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP10A13FTA 7” 8mm 3000 units ZXMP10A13FTC 13” 8mm 10000units ORDERING INFORMATION PINOUT SOT23

PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a) R/H9052JA 200 °C/W Junction to Ambient (b) R/H9052JA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t /H113495 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300/H9262s - pulse width limited by maximum junction temperature. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current @ V GS=10V; TA=25°C (b) @VGS=10V; TA=70°C (b) @V GS=10V; TA=25°C (a) ID -0.7 -0.5 -0.6 A A A Pulsed Drain Current (c) IDM -3.1 A Continuous Source Current (Body Diode) (b) IS -1.1 A Pulsed Source Current (Body Diode) (c) ISM -3.1 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 625 mW mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j,T stg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -100 V I D= -250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS -1.0 /H9262AV DS= -100V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=±20V, V DS=0V Gate-Source Threshold Voltage V GS(th) -2.0 -4.0 V I D= -250 /H9262A, V DS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 1 1.45 /H9024 /H9024 VGS= -10V, I D= -0.6A VGS= -6V, I D= -0.5A Forward Transconductance (1)(3) gfs 1.2 S V DS= -15V, I D= -0.6A DYNAMIC (3) Input Capacitance C iss 141 pF VDS= -50V, V GS=0V f=1MHz Output Capacitance C oss 13.1 pF Reverse Transfer Capacitance C rss 10.8 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.6 ns VDD= -50V, I D= -1A RG ≅ 6.0 /H9024,V GS= -10V Rise Time t r 2.1 ns Turn-Off Delay Time t d(off) 5.9 ns Fall Time t f 3.3 ns Gate Charge Q g 1.8 nC V DS= -50V, V GS= -5V ID= -0.6A Total Gate Charge Q g 3.5 nC VDS= -50V, V GS= -10V ID= -0.6AGate-Source Charge Q gs 0.6 nC Gate-Drain Charge Q gd 1.6 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -0.95 V T j=25°C, I S= -0.75A, VGS=0V Reverse Recovery Time (3) trr 29 ns T j=25°C, I S= -0.9A, di/dt=100A/ /H9262sReverse Recovery Charge (3) Qrr 31 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width /H11349300ms; duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2005 DIM MILLIMETRES INCHES DIM MILLIMETRES INCHES MIN MAX MIN MAX MIN MAX MIN MAX G 1.90 NOM 0.075 NOM /H905210/H11034TYP 10 /H11034TYP PACKAGE DIMENSIONS PACKAGE OUTLINE PAD LAYOUT Controlling dimensions are in millimetres. Approximate conversions are given in inches