ZXMN2A14F ZETEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

1 SEMICONDUCTORS

V(BR)DSS=20V : RDS(on)=0.06 ; ID=4.1A

DESCRIPTION

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23 package

APPLICATIONS

  • DC-DC Converters
  • Power Management functions
  • Disconnect switches
  • Motor control DEVICE MARKING
  • 214 ZXMN2A14F ISSUE 2 - SEPTEMBER 2003 20V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN2A14FTA 7” 8mm 3000 units ZXMN2A14FTC 13” 8mm 10000 units ORDERING INFORMATION PINOUT SOT23

PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a) R/H9052JA 125 °C/W Junction to Ambient (b) R/H9052JA 82 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t /H113495 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300/H9262s - pulse width limited by maximum junction temperature. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GS /H1100612 V Continuous Drain Current @V GS=4.5V; T A=25°C (b) @V GS=4.5V; T A=70°C (b) @V GS=4.5V; T A=25°C (a) ID 4.1 3.3 3.4 A A A Pulsed Drain Current (c) IDM 19 A Continuous Source Current (Body Diode) (b) IS 1.7 A Pulsed Source Current (Body Diode) (c) ISM 19 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1 W mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 1.5 W mW/°C Operating and Storage Temperature Range T j,T stg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS 30 V I D=250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS 1 /H9262AV DS=20V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100612V, V DS=0V Gate-Source Threshold Voltage V GS(th) 0.7 V I D=250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.060 0.110 /H9024 /H9024 V GS=4.5V, I D=3.4A VGS=2.5V, I D=2.5A Forward Transconductance (1) (3) gfs 9.4 S V DS=10V,I D=3.4A DYNAMIC (3) Input Capacitance C iss 544 pF VDS= 10V, V GS=0V, f=1MHz Output Capacitance C oss 132 pF Reverse Transfer Capacitance C rss 85 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 4.0 ns VDD= 10V, V GS=4 . 5 V ID=1 A RG ≅ 6.0 /H9024 Rise Time t r 5.3 ns Turn-Off Delay Time t d(off) 16.6 ns Fall Time t f 9.5 ns Total Gate Charge Q g 6.6 nC VDS=10V,V GS= 4.5V, ID=3.4A Gate-Source Charge Q gs 1.2 nC Gate-Drain Charge Q gd 2.1 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.85 0.95 V T J=25°C, I S=(3.3)A, VGS=0V Reverse Recovery Time (3) trr 11.4 ns T J=25°C, I F=(1.7)A, di/dt= 100A/ /H9262sReverse Recovery Charge (3) Qrr 4.6 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex plc 2003 DIM MILLIMETRES INCHES DIM MILLIMETRES INCHES MIN MAX MIN MAX MIN MAX MIN MAX G 1.90 NOM 0.075 NOM /H905210/H11034TYP 10 /H11034TYP PACKAGE DIMENSIONS PACKAGE OUTLINE PAD LAYOUT Controlling dimensions are in millimetres. Approximate conversions are given in inches