ZXMN2A03E6_05 ZETEX | Alldatasheet

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Technical content

V(BR)DSS = 20V; RDS(ON) = 0.055 ID = 4.6A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23-6 package

APPLICATIONS

  • DC - DC Converters
  • Power Management Functions
  • Disconnect switches
  • Motor control DEVICE MARKING
  • 2A3 ZXMN2A03E6 ISSUE 4 - SEPTEMBER 2005 20V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN2A03E6TA 7” 8mm 3000 units ZXMN2A03E6TC 13” 8mm 10000 units

ORDERING INFORMATION

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 113 °C/W Junction to Ambient (b) RθJA 70 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H110885 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10/H9262s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Refer to transient thermal impedance graph. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V Gate Source Voltage V GS 12 V Continuous Drain Current V GS=10V; T A=25°C (b) VGS=10V; T A=70°C (b) VGS=10V; T A=25°C (a) ID 4.6 3.7 3.7 A Pulsed Drain Current (c) I DM 16 A Continuous Source Current (Body Diode) (b) I S 2.7 A Pulsed Source Current (Body Diode) (c) I SM 16 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.7 13.6 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL MIN. TYP. MAX. UNIT C ONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 20 V ID=250 µA, V GS=0V Zero Gate Voltage Drain Current I DSS 1 /H9262AV DS=20V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100612V, V DS=0V Gate-Source Threshold Voltage V GS(th) 0.7 V ID=250 µA, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.055 0.100 /H9024 /H9024 VGS=4.5V, I D=7.2A VGS=2.5V, I D=4.6A Forward Transconductance (1)(3) g fs 13 S V DS=10V,I D=7.2A DYNAMIC (3) Input Capacitance C iss 837 pF VDS=10 V, V GS=0V, f=1MHzOutput Capacitance C oss 168 pF Reverse Transfer Capacitance C rss 90 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 4.7 ns VDD =10V, I D=1A RG=6.0 Ω,V GS=4.5V Rise Time t r 5.7 ns Turn-Off Delay Time t d(off) 18.5 ns Fall Time t f 10.5 ns Total Gate Charge Q g 8.2 nC VDS=10V,V GS=4.5V, ID=7.2AGate-Source Charge Q gs 2.3 nC Gate-Drain Charge Q gd 2.0 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.85 0.95 V T J=25°C, I S=4.1A, VGS=0V Reverse Recovery Time (3) t rr 12 ns T J=25°C, I F=1.9A, di/dt= 100A/ µs Reverse Recovery Charge (3) Q rr 4.9 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

0.1 1 10 0.1 0.1 1 10 0.1 1230.1 -50 0 50 100 1500.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.1 1.5V VGS 2.5V Output Characteristics T = 25°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 1.5V 2.5V 3V7V Output Characteristics T = 150°C ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS= 10V T = 25°C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS=4 . 5 V ID =7 . 2 A VGS(th) VGS=VDS ID = 250uA Normalised RDS(on)and VGS(th) Tj Junction Temperature (°C) 1.5V 2.5V On-Resistance v Drain Current T = 25°C VGS RDS(on)Drain-Source On-Resistance(Ω) ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A) TYPICAL CHARACTERISTICS

0.1 1 100 200 400 600 800 1000 1200 1400 CRSS COSS CISS VGS=0 V f=1 M H z C Capacitance (pF) VDS -D r a i n-S o u r c eV o l t a g e( V ) 05 1 00.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ID =7 . 2 A VDS= 10V G a t e - S o u r c eV o l t a g evG a t eC h a r g eCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) TYPICAL CHARACTERISTICS

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2005 DIM Millimetres Inches DIM Millimetres Inches Min Max Min Max Min Max Min Max D 2.80 3.00 0.110 0.118 L 0° 10° 0° 10° PACKAGE DIMENSIONS CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES. DATUM Aa C E AA 2 D b e PACKAGE OUTLINE PAD LAYOUT DETAILS