ZXMN2A02N8 ZETEX | Alldatasheet
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Technical content
V(BR)DSS = 20V; RDS(ON) = 0.02 ID = 10.2A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
APPLICATIONS
20V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN2A02N8TA 12mm 500 units ZXMN2A02N8TC 13” 12mm 2500 units
ORDERING INFORMATION
Junction to Ambient (a) RθJA °C/W Junction to Ambient (b) RθJA °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS V Gate Source Voltage VGS V Continuous Drain Current VGS=-10V; TA=25°C (b) VGS=-10V; TA=70°C (b) VGS=-10V; TA=25°C (a) ID 10.2 8.2 8.3 A Pulsed Drain Current (c) IDM A Continuous Source Current (Body Diode) (b) IS 4.3 A Pulsed Source Current (Body Diode) (c) ISM A Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.56 12.5 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 2.5 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 ABSOLUTE MAXIMUM RATINGS.
MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V(BR)DSS V ID=250µA, VGS=0V Zero Gate Voltage Drain Current IDSS A VDS=20V, VGS=0V Gate-Body Leakage IGSS 100 nA VGS=12V, VDS=0V Gate-Source Threshold Voltage VGS(th) 0.7 V ID=250A, VDS= VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.02 0.04 VGS=4.5V, ID=11A VGS=2.5V, ID=8.4A Forward Transconductance (1)(3) gfs S VDS=10V,ID=11A DYNAMIC (3) Input Capacitance Ciss 1900 pF VDS=10V, VGS=0V, f=1MHz Output Capacitance Coss 356 pF Reverse Transfer Capacitance Crss 218 pF SWITCHING(2) (3) Turn-On Delay Time td(on) 7.9 ns VDD =10V, ID=1A RG≅6.0Ω, VGS=4.5V Rise Time tr ns Turn-Off Delay Time td(off) 33.3 ns Fall Time tf 13.6 ns Total Gate Charge Qg 18.9 nC VDS=10V,VGS=4.5V, ID=11A Gate-Source Charge Qgs 5.2 nC Gate-Drain Charge Qgd 4.9 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.85 0.95 V TJ=25°C, IS=11.5A, VGS=0V Reverse Recovery Time (3) trr 16.3 ns TJ=25°C, IF=2.1A, di/dt= 100A/µs Reverse Recovery Charge (3) Qrr 7.8 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width 300µs. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2005 DIM INCHES MILLIMETRES MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 e
0.050 BSC
1.27 BSC
b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 h 0.010 0.020 0.25 0.50 PACKAGE DIMENSIONS D E H L c e b Seating Plane Pin 1 A PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES