ZXMN2A01F_06 ZETEX | Alldatasheet

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Technical content

V(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23 package

APPLICATIONS

  • DC - DC converters
  • Power management functions
  • Disconnect switches
  • Motor control DEVICE MARKING
  • 7N2 ZXMN2A01F ISSUE 2 - FEBRUARY 2006 20V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN2A01FTA 7” 8mm 3000 units ZXMN2A01FTC 13” 8mm 10000 units

ORDERING INFORMATION

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H113495 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300/H9262s - pulse width limited by maximum junction temperature. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GS 12 V Continuous Drain Current V GS=10V; T A=25°C (b) VGS=10V; T A=70°C (b) VGS=10V; T A=25°C (a) ID 2.2 1.7 1.9 A Pulsed Drain Current (c) I DM 8A Continuous Source Current (Body Diode) (b) I S 1.29 A Pulsed Source Current (Body Diode) (c) I SM 8A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 625 mW mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 20 V ID=250 µA, V GS=0V Zero Gate Voltage Drain Current I DSS 1 µA VDS=20V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100612V, V DS=0V Gate-Source Threshold Voltage V GS(th) 0.7 V ID=250 µA, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.12 0.225 Ω Ω VGS=4.5V, I D=4A VGS=2.5V, I D=1.5A Forward Transconductance (1)(3) g fs 6.1 S V DS=10V,I D=4A DYNAMIC (3) Input Capacitance C iss 303 pF VDS=15 V, V GS=0V, f=1MHzOutput Capacitance C oss 59 pF Reverse Transfer Capacitance C rss 30 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 2.49 ns VDD =10V, I D=4A RG=6.0 Ω,V GS=5V Rise Time t r 5.21 ns Turn-Off Delay Time t d(off) 7.47 ns Fall Time t f 4.62 ns Total Gate Charge Q g 3.0 nC VDS=10V,V GS=4.5V, ID=4AGate-Source Charge Q gs 0.8 nC Gate-Drain Charge Q gd 1.0 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.85 0.95 V T J=25°C, I S=3.2A, VGS=0V Reverse Recovery Time (3) t rr 23 ns T J=25°C, I F=4 A , di/dt= 100A/ µs R e v e r s eR e c o v e r yC h a r g e( 3 ) Q rr 5.65 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES ZXMN2A01F SEMICONDUCTORS ISSUE 2 - FEBRUARY 2006 Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2006 PACKAGE OUTLINE PAD LAYOUT DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Max Max G 1.90 NOM 0.075 NOM /H5007/H5007 /H5007 PACKAGE DIMENSIONS