ZXMN2088DE6 ZETEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Low on-resistance
  • Low gate drive capability
  • SOT23-6 (dual) package

Applications

  • Power Management functions
  • Disconnect switches
  • Relay driving and load switching

Ordering information

(inches) Tape width (mm) Quantity per reel ZXMN2088DE6TA 7 8 3,000 Device marking 2088 V(BR)DSS RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 20 0.310 @ VGS= 1.8V 1.7 Pinout – top view

Parameter Symbol Limit Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGS ± 8 V Continuous Drain current @ VGS= 4.5V; TA=25°C (b) (d) @ VGS= 4.5V; TA=70°C (b) (d) @ VGS= 4.5V; TA=25°C (a) (d) ID 2.1 1.7 1.7 A Pulsed Drain current (c) IDM 8 A Power dissipation at TA =25°C (a) (d) Linear derating factor PD 0.9 7.2 W mW/°C Power dissipation at TA =25°C (a) (e) Linear derating factor PD 1.1 8.8 W mW/°C Power dissipation at TA =25°C (b) (d) Linear derating factor PD 1.3 10.4 W mW/°C Operating and storage temperature range Tj, Tstg -55 to +150 °C Thermal resistance Parameter Symbol Value Unit Junction to Ambient (a) (d) RθJA 139 °C/W Junction to Ambient (a) (e) R θJA 113 °C/W Junction to Ambient (b) (d) R θJA 96 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) As above measured at t ≤ 5 sec. (c) Repetitive rating - 25 mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. (d) For device with one active die (e) For device with two active die running at equal power. Issue 2 – June 2008 2 www.zetex.com © Diodes Incorporated 2008 www.diodes.com

1 Die Active (a)(d)

Tamb=25°C RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area ID Drain Current (A) VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2

2 Die Active (a)(e)

Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k 100 120 140 Tamb=25°C Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 100 Tamb=25°C Pulse Power Dissipation Pulse Width (s) Maximum Power (W) Issue 2 – June 2008 3 www.zetex.com © Diodes Incorporated 2008 www.diodes.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage V(BR)DSS 20 V ID= 250μA, VGS=0V Zero gate voltage drain current IDSS 100 nA VDS= 3V, VGS=0V Zero gate voltage drain current IDSS 1 μA VDS= 20V, VGS=0V Gate-Body leakage IGSS 100 nA VGS=±8V, VDS=0V Gate-Source threshold voltage VGS(th) 0.4 1.0 V ID= 250μA, VDS=VGS Static Drain-Source on-state resistance (*) RDS(on) 112 137 165 0.200 0.240 0.310 Ω Ω Ω V GS= 4.5V, ID= 1.0A VGS= 2.5V, ID= 0.6A VGS= 1.8V, ID= 0.3A Forward transconductance (*) (‡) g fs 4.6 S VDS= 10V, ID= 1.0A Dynamic (‡) Input capacitance Ciss 279 pF Output capacitance Coss 52 pF Reverse transfer capacitance Crss 29 pF VDS= 10V, VGS=0V f=1MHz Switching (†) (‡) Turn-on-delay time td(on) 2 ns Rise time tr 3.2 ns Turn-off delay time td(off) 12.7 ns Fall time tf 6.2 ns VDD= 10V,VGS=4.5V ID= 1A RG ≈ 6.0Ω Gate Charge Total Gate charge Qg 3.8 nC Gate-Source charge Qgs 0.41 nC Gate Drain charge Qgd 0.56 nC VDS= 10V, VGS= 4.5V ID= 2.4A Source-drain diode Diode forward voltage (‡) V SD 0.75 0.95 V Tj=25°C, IS= 1.0A, VGS=0V Reverse recovery time trr 6.6 ns Reverse recovery charge Qrr 1.6 nC Tj = 25°C, IF = 1.24A di/dt = 100A/µs NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Issue 2 – June 2008 4 www.zetex.com © Diodes Incorporated 2008 www.diodes.com

0.1 1 10 0.1 0.1 1 10 0.01 0.1 1E-3 0.01 0.1 -50 0 50 100 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.1 0.01 0.1 2.5V 4.5V 1.5V Output Characteristics T = 25°C VGS 10V ID Drain Current (A) VDS Drain-Source Voltage (V) 2.5V 4.5V10V 0.5V Output Characteristics T = 150°C VGS 1.5V ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = 10V T = 25°C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 4.5V ID = 1A VGS(th) VGS = VDS ID = 250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 3.5V 1.5V 4.5V 10V 2.5V On-Resistance v Drain Current T = 25°C VGS RDS(on) Drain-Source On-Resistance (Ω) ID Drain Current (A) VGS = -3V T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A) Issue 2 – June 2008 5 www.zetex.com © Diodes Incorporated 2008 www.diodes.com

0.1 1 10 200 400 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) VDS - Drain - Source Voltage (V) 01234 ID = 1A VDS = 10V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) Test Circuits Issue 2 – June 2008 6 www.zetex.com © Diodes Incorporated 2008 www.diodes.com

Packaging details – SOT236 Issue 2 – June 2008 7 www.zetex.com © Diodes Incorporated 2008 www.diodes.com

Diodes Incorporated reserves the right to al ter, without notice, specifications, design, price or conditions of supply of any p roduct or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user ’s requirements. No representation or warranty is given and no liability whatsoever is assum ed by Diodes Inc with respect to the accuracy or use of su ch information, or infringement of patents or other intellectual property rights arisi ng from such use or otherwise. Diodes Inc does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (i ncluding negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support devic e or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduc ed for any purpose or form part of any or der or contract or be regarded as a repre sentation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and pr oducts we strongly advise the pur chase of parts directly from Diodes or one of our regionall y authorized Diodes Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unaut horized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suit able precautions should be taken when handling and transporting dev ices. The possible damage to devices depends on the circumstances of the hand ling and transporting, and the nature of the device. The ext ent of damage can vary from immediate functional or param etric malfunction to degradation of function or performance in use over time. Device s suspected of being affected should be replaced. Green compliance Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to t he use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: “Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Europe Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Highway

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Diodes Zetex (Asia) Limited 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Diodes Incorporated 15660 N. Dallas Parkway Suite 850, Dallas TX 75248, USA www.diodes.com Issue 2 – June 2008 8 www.zetex.com © Diodes Incorporated 2008 www.diodes.com