ZXMN10B08E6 ZETEX | Alldatasheet

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Technical content

V(BR)DSS = 100V; RDS(ON) = 0.230 ID = 1.9A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23-6 package

APPLICATIONS

  • DC - DC Converters
  • Power Management Functions
  • Disconnect switches
  • Motor control DEVICE MARKING
  • 10B8 ZXMN10B08E6 PROVISIONAL ISSUE B - MAY 2003 100V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN10B08E6TA 7” 8mm 3000 units ZXMN10B08E6TC 13” 8mm 10000 units

ORDERING INFORMATION

PROVISIONAL ISSUE B - MAY 2003 PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a) RθJA 113 °C/W Junction to Ambient (b) RθJA 73 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H110885 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300/H9262s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 100 V Gate Source Voltage V GS 20 V Continuous Drain Current V GS=10V; T A=25°C (b) VGS=10V; T A=70°C (b) VGS=10V; T A=25°C (a) ID 1.9 1.5 1.6 A Pulsed Drain Current (c) I DM 9A Continuous Source Current (Body Diode) (b) I S 2.5 A Pulsed Source Current (Body Diode) (c) I SM 9A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.7 13.6 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS.

PROVISIONAL ISSUE B - MAY 2003

PROVISIONAL ISSUE B - MAY 2003 PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 100 V I D=250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS 0.5 /H9262AV DS=100V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) 1.0 3.0 V I D=250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.230 0.300 0.500 /H9024 /H9024 VGS=10V, I D=1.6A VGS=4.5V, I D=1.4A VGS=4.3V, I D=1.1A Forward Transconductance (1)(3) g fs 4.8 S V DS=15V,I D=1.6A DYNAMIC (3) Input Capacitance C iss 497 pF VDS= 5 0V ,VGS=0V, f=1MHzOutput Capacitance C oss 29 pF Reverse Transfer Capacitance C rss 18 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 2.9 ns VDD =50V, I D=1.0A RG≅6.0 /H9024,V GS=10V Rise Time t r 2.1 ns Turn-Off Delay Time t d(off) 12.1 ns Fall Time t f 5.0 ns Gate Charge Q g 5.0 nC V DS=50V,V GS=5V, I D=1.6A Total Gate Charge Q g 9.2 nC VDS=50V,V GS=10V, ID=1.6AGate-Source Charge Q gs 1.7 nC Gate-Drain Charge Q gd 2.5 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.85 0.95 V T J=25°C, I S=2.0A, VGS=0V Reverse Recovery Time (3) t rr 32.0 ns T J=25°C, I F=1.7A, di/dt= 100A/ /H9262sReverse Recovery Charge (3) Q rr 40.0 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE B - MAY 2003 TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE B - MAY 2003

PROVISIONAL ISSUE B - MAY 2003 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex plc 2003 DIM Millimetres Inches DIM Millimetres Inches Min Max Min Max Min Max Min Max D 2.80 3.00 0.110 0.118 L 0° 10° 0° 10° PACKAGE DIMENSIONS CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES. DATUM Aa C E AA 2 D b e PACKAGE OUTLINE PAD LAYOUT DETAILS