ZXMN10A11K ZETEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Low on-resistance  Fast switching speed  Low threshold  Low gate drive  DPAK package

Applications

 DC-DC converters  Power management functions  Disconnect switches  Motor control

Ordering information

V(BR)DSS RDS(on) (/H9024) ID (A) 100 0.350 @ VGS= 10V 3.5 0.450 @ VGS= 6V 3.1 Device Reel size (inches) Tape width (mm) Quantity per reel ZXMN10A11KTC 13 16 2,500 D S G GS D D Pinout - top view

Issue 1 - August 2006 2 www.zetex.com © Zetex Semiconductors plc 2006 Absolute maximum ratings NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR 4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 /H9262s - pulse width limited by maximum junction temperature. (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Parameter Symbol Limit Unit Drain-source voltage V DSS 100 V Gate-source voltage V GS ±20 V Continuous drain current @ V GS= 10V; Tamb=25°C(b) ID 3.5 A @ VGS= 10V; Tamb=70°C(b) 2.8 @ VGS= 10V; Tamb=25°C(a) 2.4 Pulsed drain current(c) IDM 9.9 A Continuous source current (body diode)(b) IS 8.35 A Pulsed source current (body diode)(c) ISM 9.9 A Power dissipation at Tamb =25°C(a) PD 4.06 W Linear derating factor 32.4 mW/°C Power dissipation at Tamb =25°C(b) PD 8.5 W Linear derating factor 68 mW/°C Power dissipation at Tamb =25°C(d) PD 2.11 W Linear derating factor 16.8 mW/°C Operating and storage temperature range T j, Tstg -55 to +150 °C Thermal resistance Parameter Symbol Limit Unit Junction to ambient(a) R/H9052JA 30.8 °C/W Junction to ambient(b) R/H9052JA 14.7 °C/W Junction to ambient(d) R/H9052JA 59.1 °C/W

Issue 1 - August 2006 3 www.zetex.com © Zetex Semiconductors plc 2006 Thermal characteristics

Issue 1 - August 2006 4 www.zetex.com © Zetex Semiconductors plc 2006 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-source breakdown voltage V(BR)DSS 100 V I D= 250/H9262A, VGS=0V Zero gate voltage drain current IDSS 1 /H9262AV DS= 100V, VGS=0V Gate-body leakage I GSS 100 nA V GS=±20V, VDS=0V Gate-source threshold voltage V GS(th) 2.0 4.0 V I D= 250/H9262A, VDS=VGS Static drain-source on-state resistance (*) NOTES: (*) Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. RDS(on) 0.350 /H9024VGS= 10V, ID= 2.6A 0.450 /H9024VGS= 6V, ID = 1.3A Forward transconductance(*) (‡) gfs 4S V DS= 15V, ID= 2.6A Dynamic(‡) Input capacitance C iss 274 pF V DS= 50V, VGS=0V f=1MHzOutput capacitance C oss 21 pF Reverse transfer capacitance C rss 11 pF Switching (†) (‡) (†) Switching characteristics are independent of operating junction temperature. Turn-on-delay time t d(on) 2.7 ns V DD= 50V, ID= 1A RG≅6.0/H9024, VGS= 10VRise time t r 1.7 ns Turn-off delay time t d(off) 7.4 ns Fall time t f 3.5 ns Gate charge Q g 3n C V DS= 50V, VGS= 5V ID= 2.5A Total gate charge Q g 5.4 nC V DS= 50V, VGS= 10V ID= 2.5AGate-source charge Q gs 1.4 nC Gate drain charge Q gd 1.5 nC Source-drain diode Diode forward voltage(*) VSD 0.85 0.95 V T j=25°C, IS= 1.85A, VGS=0V Reverse recovery time (‡) (‡) For design aid only, not subject to production testing. trr 26 ns T j=25°C, IS= 1A, di/dt=100A//H9262sReverse recovery charge(‡) Qrr 30 nC

Issue 1 - August 2006 5 www.zetex.com © Zetex Semiconductors plc 2006 Typical Characteristics

Issue 1 - August 2006 6 www.zetex.com © Zetex Semiconductors plc 2006 Typical Characteristics Current regulator Charge Gate charge test circuit Switching time test circuit Basic gate charge waveform Switching time waveforms D.U.T 50k12V Same as D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on)t(on) td(on) tr trtd(off) VDS VCC RD RG VDS ID IG

Issue 1 - August 2006 7 www.zetex.com © Zetex Semiconductors plc 2006 Intentionally left blank

Issue 1 - August 2006 8 www.zetex.com © Zetex Semiconductors plc 2006 For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Highway

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Package outline - DPAK Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters DIM Inches Millimeters DIM Inches Millimeters Min Max Min Max Min Max Min Max D1 0.205 - 5.21 - /H90521° 0° 10° 0° 10° E 0.250 0.265 6.35 6.73 /H9052° 0° 15° 0° 15°