ZXMN10A08E6 ZETEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

V(BR)DSS= 100V; RDS(ON)= 0.4 ID= 1.5A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23-6 package

APPLICATIONS

  • DC - DC Converters
  • Power Management Functions
  • Disconnect switches
  • Motor control DEVICE MARKING
  • 10A8 ZXMN10A08E6 ISSUE 1 - MARCH 2002 100V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN10A08E6TA 7” 8mm 3000 units ZXMN10A08E6TC 13” 8mm 10000 units

ORDERING INFORMATION

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 113 °C/W Junction to Ambient (b) RθJA 73 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H1108810 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10/H9262s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 100 V Gate Source Voltage V GS 20 V Continuous Drain Current V GS=10V; T A=25°C (b) VGS=10V; T A=70°C (b) VGS=10V; T A=25°C (a) ID 1.5 1.2 1.21 A Pulsed Drain Current (c) I DM 5.3 A Continuous Source Current (Body Diode) (b) I S 2.5 A Pulsed Source Current (Body Diode) (c) I SM 5.3 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.7 13.6 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL MIN. TYP . MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 100 V I D=250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS 0.5 /H9262AV DS=100V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) 2.0 V I D=250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.40 0.60 /H9024 /H9024 VGS=10V, I D=3.2A VGS=6V, I D=2.6A Forward Transconductance (1)(3) g fs 5.0 S V DS=15V,I D=3.2A DYNAMIC (3) Input Capacitance C iss 405 pF VDS= 5 0V ,VGS=0V, f=1MHzOutput Capacitance C oss 28.2 pF Reverse Transfer Capacitance C rss 14.2 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 3.4 ns VDD =30V, I D=1.2A RG=6.0 /H9024,V GS=10V Rise Time t r 2.2 ns Turn-Off Delay Time t d(off) 8n s Fall Time t f 3.2 ns Gate Charge Q g 4.2 nC V DS=50V,V GS=5V, ID=1.2A Total Gate Charge Q g 7.7 nC VDS=50V,V GS=10V, ID=1.2AGate-Source Charge Q gs 1.8 nC Gate-Drain Charge Q gd 2.1 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.87 0.95 V T J=25°C, I S=3.2A, VGS=0V Reverse Recovery Time (3) t rr 27 ns T J=25°C, I F=1.2A, di/dt= 100A/ /H9262sReverse Recovery Charge (3) Q rr 32 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex plc 2001 ZXMN10A08E6 ISSUE 1 - MARCH 2002 DATUM Aa C E AA 2 D b e PACKAGE DIMENSIONS PAD LAYOUT DETAILS DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF 0.037 REF e1 1.90 REF 0.074 REF L 0° 10° 0° 10°