ZXMN10A08DN8 ZETEX | Alldatasheet

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Technical content

V(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

APPLICATIONS

Power management functions Disconnect switches Motor control DEVICE MARKING ZXMN 10A08D ZXMN10A08DN8 ISSUE 4 - JANUARY 2005 100V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN10A08DN8TA 12mm 500 units ZXMN10A08DN8TC 13” 12mm 2,500 units

ORDERING INFORMATION

Junction to ambient (a) RθJA 100 °C/W Junction to ambient (b) RθJA °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDSS 100 V Gate source voltage VGS V Continuous drain current VGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) ID 2.1 1.7 1.6 A Pulsed drain current (c) IDM A Continuous source current (body diode) (b) IS 2.6 A Pulsed source current (body diode) (c) ISM A Power dissipation at TA=25°C (a) Linear derating factor PD 1.25 W mW/°C Power dissipation at TA=25°C (b) Linear derating factor PD 1.8 14.5 W mW/°C Operating and storage temperature range Tj:Tstg -55 to +150 ABSOLUTE MAXIMUM RATINGS

MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-source breakdown voltage V(BR)DSS 100 V ID=250A, VGS=0V Zero gate voltage drain current IDSS 0.5 A VDS=100V, VGS=0V Gate-body leakage IGSS 100 nA VGS=20V, VDS=0V Gate-source threshold voltage VGS(th) 2.0 V ID=250A, VDS= VGS Static drain-source on-state resistance (1) RDS(on) 0.25 0.30 VGS=10V, ID=3.2A VGS=6V, ID=2.6A Forward transconductance (1)(3) gfs 5.0 S VDS=15V,ID=3.2A DYNAMIC (3) Input capacitance Ciss 405 pF VDS=50 V, VGS=0V, f=1MHz Output capacitance Coss 28.2 pF Reverse transfer capacitance Crss 14.2 pF SWITCHING(2) (3) Turn-on delay time td(on) 3.4 ns VDD =30V, ID=1.2A RG≅6.0, VGS=10V Rise time tr 2.2 ns Turn-off delay time td(off) ns Fall time tf 3.2 ns Gate charge Qg 4.2 nC VDS=50V,VGS=5V, ID=1.2A Total gate charge Qg 7.7 nC VDS=50V,VGS=10V, ID=1.2A Gate-source charge Qgs 1.8 nC Gate-drain charge Qgd 2.1 nC SOURCE-DRAIN DIODE Diode forward voltage (1) VSD 0.87 0.95 V TJ=25°C, IS=3.2A, VGS=0V Reverse recovery time (3) trr ns TJ=25°C, IF=1.2A, di/dt= 100A/s Reverse recovery charge (3) Qrr nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). NOTES: (1) Measured under pulsed conditions. Width = 300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on towww.zetex.com © Zetex Semiconductors plc 2005 DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A 1.35 1.75 0.053 0.069 e

1.27 BSC

0.050 BSC

0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 H 5.80 6.20 0.228 0.244 E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 PACKAGE DIMENSIONS CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES PACKAGE OUTLINE