ZXMN10A07Z_04 ZETEX | Alldatasheet

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Technical content

1 SEMICONDUCTORS

V(BR)DSS=100V : RDS(on)=0.7 ; ID=1.4A

DESCRIPTION

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT89 package

APPLICATIONS

  • DC-DC converters
  • Power management functions
  • Disconnect switches
  • Motor control DEVICE MARKING
  • 7N10 ZXMN10A07Z ISSUE 6 - MAY 2004 100V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN10A07ZTA 7" 12mm 1000 units

ORDERING INFORMATION

(Top view) SOT89

PARAMETER SYMBOL V ALUE UNIT Junction to ambient (a) R/H9052JA 83.3 °C/W Junction to ambient (b) R/H9052JA 47.4 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300/H9262s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V DSS 100 V Gate-source voltage V GS ±20 V Continuous drain current @V GS=10V; T A=25°C (b) @V GS=10V; T A=70°C (b) @V GS=10V; T A=25°C (a) ID 1.4 1.1 1.0 A Pulsed drain current (c) IDM 4.2 A Continuous source current (body diode) (b) IS 2.1 A Pulsed source current (body diode) (c) ISM 4.2 A Power dissipation at T A =25°C (a) Linear derating factor PD 1.5 W mW/°C Power dissipation at T A =25°C (b) Linear derating factor PD 2.6 W mW/°C Operating and storage temperature range T j,T stg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-source breakdown voltage V (BR)DSS 100 V ID= 250 /H9262A, V GS=0V Zero gate voltage drain current I DSS 1 /H9262A VDS= 100V, V GS=0V Gate-body leakage I GSS 100 nA VGS=/H1100620V, V DS=0V Gate-source threshold voltage V GS(th) 2.0 V ID= 250 /H9262A, V DS=VGS Static drain-source on-state resistance (1) RDS(on) 0.7 /H9024VGS= 10V, I D= 1.5A 0.9 /H9024VGS=6 V ,I D =1 A Forward transconductance (1) (3) gfs 1.6 S V DS= 15V, I D=1 A DYNAMIC (3) Input capacitance C iss 138 pF VDS= 50V, V GS=0V f=1MHz Output capacitance C oss 12 pF Reverse transfer capacitance C rss 6p F SWITCHING (2) (3) Turn-on-delay time t d(on) 1.8 ns VDD= 50V, I D=1 A RG≅6.0 /H9024,V GS= 10V Rise time t r 1.5 ns Turn-off delay time t d(off) 4.1 ns Fall time t f 2.1 ns Total gate charge Q g 2.9 nC Gate-source charge Q gs 0.7 nC V DS= 50V, V GS= 10V ID=1 AGate drain charge Q gd 1n C SOURCE-DRAIN DIODE Diode forward voltage (1) VSD 0.85 0.95 V T j=25°C, I S= 1.5A, VGS=0V Reverse recovery time (3) trr 27 ns Tj=25°C, I F= 1A, di/dt=100A/ /H9262sReverse recovery charge (3) Qrr 12 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2004 PAD LAYOUT DETAILS H A D B K G N F C PACKAGE DIMENSIONS DIM Millimeters Inches Min Max Min Max A 4.40 4.60 0.173 0.181 B 3.75 4.25 .150 0.167 C 1.40 1.60 0.550 0.630 D - 2.60 - 0.102 F 0.28 0.45 0.011 0.018 G 0.38 0.55 0.015 0.022 H 1.50 1.80 0.060 0.072 K 2.60 2.85 0.102 0.112 L 2.90 3.10 0.114 0.112 N 1.4 1.60 0.055 0.063