ZXMN0545G4 ZETEX | Alldatasheet

Document overview

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Technical content

V(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mA

DESCRIPTION

This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.

FEATURES

  • High voltage
  • Low on-resistance
  • Fast switching speed
  • Low gate drive
  • Low threshold
  • SOT223 package variant engineered to increase spacing between high voltage pins

APPLICATIONS

  • Off-line power supply start-up circuitry

ORDERING INFORMATION

(inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMN0545G4TA 12mm embossed 1,000 units ZXMN0545G4TC 12mm embossed 4,000 units DEVICE MARKING ZXMN 0545 ZXMN0545G4 ISSUE 1 - JANUARY 2006 450V N-CHANNEL ENHANCEMENT MODE MOSFET N/C PINOUT - TOP VIEW SOT223

V Gate Source Voltage VGS V Continuous Drain Current (VGS=10V; Tamb=25°C)(a) ID 140 mA Pulsed Drain Current (c) IDM 600 mA Continuous Source Current (Body Diode) (b) IS 140 A Pulsed Source Current (Body Diode) (c) ISM 600 A Power Dissipation at Tamb=25°C (a) Linear derating factor Ptot 2.0 1.6 W mW/°C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 62.5 °C/W Junction to Ambient (b) RθJA °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS Drain-Source Breakdown Voltage BVDSS 450 V ID=1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) V ID=1mA, VDS= VGS Gate-Body Leakage IGSS nA VGS= 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 400 µA µA VDS=450 V, VGS=0V VDS=405 V, VGS=0V, T=125°C (2) On-State Drain Current(1) ID(on) 150 mA VDS=25 V, VGS=10V Static Drain-Source On-State Resistance (1) RDS(on) Ω VGS=10V, ID=100mA Forward Transconductance (1)(2) gfs 100 mS VDS=25V, ID=100mA Input Capacitance (2) Ciss pF Common Source Output Capacitance (2) Coss pF VDS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss pF Turn-On Delay Time (2)(3) td(on) ns VDD=25V, ID=100mA Rise Time (2)(3) tr ns Turn-Off Delay Time (2)(3) td(off) ns Fall Time (2)(3) tf ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50Ωsource impedance and <5ns rise time on a pulse generator

n o S D d n a VGS(th) i a r D S n c r u o e R s e is c n a t e RD ( S on) G e t a Th s e r hold Vo tl g a e V S G ( h t ) Tj C e r u t a r e p m e T n oitc n u J I = D A V S G V I = D A m V S G V S D V S G e g a tlo V e c r u o S e t a G s tl o V R S D (ON) -Dra S n i o r u ce e R sistance ( ) I = D A m A m A m Output characteristics Saturation characteristics Voltage saturation characteristics On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) temperature Transfer characteristics V S D e c r u o S nia r D s tl o V e g a tl o V ID(On) On-Sta r D e t ain u C rrent (mA) V S D e c r u o S nia r D V g a tl o e (Vo tl s) V S G e g a tlo V e c r u o S e t a G s tl o V I = D A m A m ID(On) Drain u C rre t n (mA) V S G e c r u o S e t a G s tl o V e g a tl o V ID(On)Drai C n urre m ( t n V S D e c r u o S nia r D s tl o V e g a tl o V A m V S D V V V V V V S G = V V V V V V V S G = V TYPICAL CHARACTERISTICS

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. © Zetex Semiconductors plc 2006 Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE OUTLINE 1.5 0.059 mm inches 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.0 0.079 PAD LAYOUT DETAILS DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A 1.80 0.071 e

2.30 BSC

0.0905 BSC

0.02 0.10 0.0008 0.004

4.60 BSC

0.181 BSC

b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 2.90 3.10 0.114 0.122 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 0.355 D 6.30 6.70 0.248 0.264 PACKAGE DIMENSIONS