ZXMHN6A07T8 ZETEX | Alldatasheet

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Technical content

V(BR)DSS= 60V : R DS(on)= 0 . 3 ; ID= 1.6A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

/g183Compact package /g183Low on state losses /g183Low drive requirements /g183Operates up to 60V /g1831 Amp continuous rating

APPLICATIONS

/g183Motor control DEVICE MARKING /g183ZXMH N6A07 ZXMHN6A07T8 ISSUE 2 - MAY 2004 60V N-CHANNEL MOSFET H-BRIDGE SM8 TOP VIEW PINOUT DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMHN6A07T8TA 7” 12m m 1,000 units ZXMHN6A07T8TC 13” 12m m 4,000 units

ORDERING INFORMATION

PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V DSS 60 V Gate-source voltage V GS ±2 0 V Continuous drain current (V GS= 10V; T A= 25° C) (b) (d) (VGS= 10V; T A= 70° C) (b) (d) (VGS= 10V; T A= 25° C) (a) (d) ID 1.6 1.3 1.4 A A A Pulsed drain current (c) IDM 9A Continuous source current (body diode) (b) (d) IS 1A Pulsed source current (body diode) (c) ISM 9A Total power dissipation at T A = 25° C Any Single transistor " on" (a) (d) Single transistor ‘on’ (b) (d) Two transistors ‘on’ equally (a) (e) PTOT 1.1 1.4 1.6 W W W Linear derating factor above 25° C (a) Single transistor " on" (a) (d) Single transistor ‘on’ (b) (d) Two transistors ‘on’ equally (a) (e) 8.8 11.2 13.2 mW/° C mW/° C mW/° C Thermal resistance - junction to ambient Single transistor " on" (a) (d) Single transistor " on" (b) (d) Two transistors ‘on’ equally (a) (e) Rth(j-amb) 114 °C / W °C / W °C / W Operating and storage temperature range T j,T stg -55 to + 150 ° C ABSOLUTE MAXIMUM RATINGS (a) For a device mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2oz weight copper in still air conditions with the heat sink split into three equal areas, one for each drain connection. (b) For a device surface mounted on a FR4 PCB at t /H11021= 10 sec. (c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, duty cycle 2% , pulse width 300 /H9262S in still air conditions with the heat sink split into three equal areas, one for each drain connection. (d) For device with one active die. (e) For any two die not sharing the same drain connection.

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-source breakdown voltage V (BR)DSS 60 V ID= 250 /H9262A, V GS=0 V Zero gate voltage drain current I DSS 1.0 /H9262A VDS= 60V, V GS=0 V Gate-body leakage I GSS 100 nA V GS= ± 20V, V DS=0 V Gate-source threshold voltage V GS(th) 1.0 3.0 V ID= 250 /H9262A, V DS=V GS Static drain-source on-state resistance (1) RDS(on) 0.3 0.45 /H9024 /H9024 VGS= 10V, I D=1 . 8 A VGS=4 . 5 V , I D=1 . 3 A Forward transconductance (1) (3) gfs 2.3 S V DS= 15V, I D=1 . 8 A DYNAMIC (3) Input capacitance C iss 166 pF VDS= 40V, V GS=0 V f= 1MHz Output capacitance C oss 20 pF Reverse transfer capacitance C rss 9p F SWITCHING (2) (3) Turn-on-delay time t d(on) 1.8 ns VDD= 30V, I D=1 . 8 A RG /g646.0 /g87,V GS= 10V Rise time t r 1.4 ns Turn-off delay time t d(off) 4.9 ns Fall time t f 2.0 ns Total gate charge Q g 3.2 nC VDS= 30V, V GS= 10V ID=1 . 8 AGate-source charge Q gs 0.7 nC Gate drain charge Q gd 0.8 nC SOURCE-DRAIN DIODE Diode forward voltage (1) VSD 0.95 V T j= 25° C, I S= 0.45A, VGS=0 V Reverse recovery time (3) trr 21 ns Tj= 25° C, I F=1 . 0 A , di/dt= 100A/ /H9262sReverse recovery charge (3) Qrr 21 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width/H11349300 /H9262s; duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Met roplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquaters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham , OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ©Zetex Semiconductors plc 2004 DIM Millimeters Inches DIM Millimeters Inches Min Max Typ. Min Max Typ. Min Max Typ. Min Max Typ. PACKAGE DIMENSIONS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE OUTLINE