ZXMHC3A01T8 ZETEX | Alldatasheet

Document overview

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Technical content

N-Channel = V(BR)DSS= 30V : RDS(on)= 0.12 ; ID= 3.1A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.21 ; ID= -2.3A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Single SM-8 surface mount package

APPLICATIONS

  • Single phase DC fan motor drive DEVICE MARKING
  • ZXMH C3A01 ZXMHC3A01T8 DRAFT ISSUE E - APRIL 2004 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE SM8 D,1 D2 D,3 D4 S2 S3 S1 S4 G1 G4 Top View PINOUTDEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMHC3A01T8TA 7” 12mm 1,000 units ZXMHC3A01T8TC 13” 12mm 4,000 units

ORDERING INFORMATION

DRAFT ISSUE E - APRIL 2004 PARAMETER SYMBOL N-Channel P-channel UNIT Drain-source voltage V DSS 30 -30 V Gate-source voltage V GS ±20 ±20 V Continuous drain current (V GS= 10V; T A=25°C) (b)(d) (VGS= 10V; T A=70°C) (b)(d) (VGS= 10V; T A=25°C) (a)(d) ID 3.1 2.5 2.7 -2.3 -1.8 -2.0 A A A Pulsed drain current (c) IDM 14.5 -10.8 A Continuous source current (body diode) (b) IS 2.3 -2.2 A Pulsed source current (body diode) (c) ISM 14.5 -10.8 A Power dissipation at T A =25°C (a) (d) Linear derating factor PD 1.3 10.4 W mW/°C Power dissipation at T A =25°C (b) (d) Linear derating factor PD 1.7 13.6 W mW/°C Operating and storage temperature range T j,T stg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL V ALUE UNIT Junction to ambient (a) (d) R/H9258JA 96 °C/W Junction to ambient (b) (d) R/H9258JA 73 °C/W NOTES (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air cond itions. (b) For a device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating on 50mm x 50mm x 1.6mm FR4, D= 0.02, pulse width 300 /H9262S - pulse width limited by maximum junction temperature. Refer to transient thermal impedance graph. (d) For device with one active die. THERMAL RESISTANCE

DRAFT ISSUE E - APRIL 2004 CHARACTERISTICS

DRAFT ISSUE E - APRIL 2004 PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-source breakdown voltage V (BR)DSS 30 V I D= 250 /H9262A, V GS=0V Zero gate voltage drain current I DSS 1.0 /H9262AV DS=30V, V GS=0V Gate-body leakage I GSS 100 nA V GS=±20V, V DS=0V Gate-source threshold voltage V GS(th) 1.0 3.0 V I D= 250 /H9262A, V DS=VGS Static drain-source on-state resistance (1) RDS(on) 0.12 0.18 /H9024 /H9024 VGS= 10V, I D= 2.5A VGS= 4.5V, I D= 2.0A Forward transconductance (1) (3) gfs 3.5 S V DS=4.5V, I D= 2.5A DYNAMIC (3) Input capacitance C iss 190 pF VDS= 25V, V GS=0V f=1MHz Output capacitance C oss 38 pF Reverse transfer capacitance C rss 20 pF SWITCHING (2) (3) Turn-on-delay time t d(on) 1.7 ns VDD= 15V, I D=2 . 5 A RG ≅ 6.0 Ω,V GS= 10V Rise time t r 2.3 ns Turn-off delay time t d(off) 6.6 ns Fall time t f 2.9 ns Total gate charge Q g 3.9 nC VDS= 15V, V GS= 10V ID= 2.5AGate-source charge Q gs 0.6 nC Gate drain charge Q gd 0.9 nC SOURCE-DRAIN DIODE Diode forward voltage (1) VSD 0.95 V T j=25°C, I S= 1.7A, VGS=0V Reverse recovery time (3) trr 17.7 ns Tj=25°C, I S= 2.5A, di/dt=100A/ /H9262sReverse recovery charge (3) Qrr 13.0 nC N-channel ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

DRAFT ISSUE E - APRIL 2004 N-channel TYPICAL CHARACTERISTICS

DRAFT ISSUE E - APRIL 2004 N-channel TYPICAL CHARACTERISTICS

DRAFT ISSUE E - APRIL 2004 PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-source breakdown voltage V (BR)DSS -30 V I D= -250 /H9262A, V GS=0V Zero gate voltage drain current I DSS -1.0 /H9262AV DS= -30V, V GS=0V Gate-body leakage I GSS 100 nA V GS=±20V, V DS=0V Gate-source threshold voltage V GS(th) -1.0 -3.0 V I D= -250 /H9262A, V DS=VGS Static drain-source on-state resistance (1) RDS(on) 0.21 0.33 /H9024 /H9024 VGS= -10V, I D= -1.4A VGS= -4.5V, I D= -1.1A Forward transconductance (1) (3) gfs 2.5 S V DS= -15V, I D= -1.4A DYNAMIC (3) Input capacitance C iss 204 pF V DS= -15V, V GS=0V f=1MHzOutput capacitance C oss 39.8 pF Reverse transfer capacitance C rss 25.8 pF SWITCHING (2) (3) Turn-on-delay time t d(on) 1.2 ns V DD= -15V, I D= -1A RG ≅ 6.0 /H9024,V GS= -10VRise time t r 2.3 ns Turn-off delay time t d(off) 12.1 ns Fall time t f 7.5 ns Total gate charge 2.6 nC V DS= -15V, V GS= -5V ID= -1.4A Total gate charge Q g 5.2 nC V DS= -15V, V GS= -10V ID= -1.4AGate-source charge Q gs 0.7 nC Gate drain charge Q gd 0.9 nC SOURCE-DRAIN DIODE Diode forward voltage (1) VSD -0.85 -0.95 V T j=25°C, I S= -1.1A, VGS=0V Reverse recovery time (3) trr 19 ns T j=25°C, I S= -0.95A, di/dt=100A/ /H9262sReverse recovery charge (3) Qrr 15 nC P-channel ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

DRAFT ISSUE E - APRIL 2004 P-channel TYPICAL CHARACTERISTICS

DRAFT ISSUE E - APRIL 2004 P-channel TYPICAL CHARACTERISTICS

DRAFT ISSUE E - APRIL 2004 Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

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