ZXMHC10A07T8 ZETEX | Alldatasheet

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Technical content

1 SEMICONDUCTORS

N-Channel = V(BR)DSS = 100V : RDS(on) = 0.7 ; ID = 1.4A P-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Single SM-8 Surface Mount Package

APPLICATIONS

  • Single Phase DC Fan Motor Drive DEVICE MARKING
  • ZXMH C10A7 ZXMHC10A07T8 ISSUE 2 - JUNE 2005 COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMHC10A07T8TA 7” 12mm 1000 units ZXMHC10A07T8TC 13” 12mm 4000 units ORDERING INFORMATION PINOUT SM8 D,1 D2 D,3 D4 S2 S3 S1 S4 G1 G4

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) (d) R/H9052JA 94.5 °C/W Junction to Ambient (b) (d) R/H9052JA 73.3 °C/W NOTES (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with the heat sink split into two equal areas one for each drain connection. (b) For a device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, D= 0.02, pulse width = 300/H9262s - pulse width limited by maximum junction temperature. Refer to transiennt thermal impedance graph. (d) For device with one active die. THERMAL RESISTANCE PARAMETER SYMBOL N-channel P-channel UNIT Drain-Source Voltage V DSS 100 -100 V Gate-Source Voltage V GS /H1100620 /H1100620 V Continuous Drain Current @V GS=10V; T A=25°C (b) (d) @V GS=10V; T A=70°C (b) (d) @V GS=10V; T A=25°C (a) (d) ID 1.1 0.9 1.0 -0.9 -0.8 -0.8 A A A Pulsed Drain Current (c) IDM 5.2 -4.5 A Continuous Source Current (Body Diode) (b) IS 2.3 -2.2 A Pulsed Source Current (Body Diode) (c) ISM 5.2 -4.5 A Power Dissipation at T A =25°C (a) (d) Linear Derating Factor PD 1.3 10.4 W mW/°C Power Dissipation at T A =25°C (b) (d) Linear Derating Factor PD 1.3 10.4 W mW/°C Operating and Storage Temperature Range T j,T stg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS 100 V I D= 250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS 1 /H9262AV DS=100V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=±20V, V DS=0V Gate-Source Threshold Voltage V GS(th) 2.0 4.0 V I D= 250 /H9262A, V DS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.7 0.9 /H9024 /H9024 VGS=1 0 V ,ID=1 . 5 A VGS=6 V ,I D=1 . 0 A Forward Transconductance (1) (3) gfs 1.6 S V DS=1 5 V ,ID=1 . 0 A DYNAMIC (3) Input Capacitance C iss 138 pF VDS=6 0 V ,VGS=0V f=1MHz Output Capacitance C oss 12 pF Reverse Transfer Capacitance C rss 6p F SWITCHING (2) (3) Turn-On-Delay Time t d(on) 1.8 ns VDD=5 0 V ,ID=1 . 0 A RG ≅ 6.0 /H9024,V GS=1 0 V Rise Time t r 1.5 ns Turn-Off Delay Time t d(off) 4.1 ns Fall Time t f 2.1 ns Total Gate Charge Q g 2.9 nC VDS=5 0 V ,VGS=1 0 V ID=1 . 0 AGate-Source Charge Q gs 0.7 nC Gate Drain Charge Q gd 1.0 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.95 V T j=25°C, I S=1 . 5 A , VGS=0V Reverse Recovery Time (3) trr 27 ns Tj=25°C, I S=1 . 8 A , di/dt=100A/ /H9262sReverse Recovery Charge (3) Qrr 12 nC N-Channel ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

PARAMETER SYMBOL MIN. TYP. MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -100 V I D= -250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS -1.0 /H9262AV DS= -100V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=±20V, V DS=0V Gate-Source Threshold Voltage V GS(th) -2.0 -4.0 V I D= -250 /H9262A, V DS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 1 1.45 /H9024 /H9024 VGS=- 1 0 V ,ID= - 0.6A VGS=- 6 V ,ID=- 0 . 5 A Forward Transconductance (1) (3) gfs 1.2 S V DS= -15V, I D=- 0 . 6 A DYNAMIC (3) Input Capacitance C iss 141 pF VDS= -50V, V GS=0V f=1MHz Output Capacitance C oss 13.1 pF Reverse Transfer Capacitance C rss 10.8 pF SWITCHING (2) (3) Turn-On-Delay Time t d(on) 1.6 ns VDD= -50V, I D=- 1 A RG ≅ 6.0 /H9024,V GS=- 1 0 V Rise Time t r 2.1 ns Turn-Off Delay Time t d(off) 5.9 ns Fall Time t f 3.3 ns Gate Charge Q g 1.6 nC V DS= -50V, V GS=- 5 V ID= -0.6A Total Gate Charge Q g 3.5 nC VDS= -50V, V GS=- 1 0 V ID= -0.6AGate-Source Charge Q gs 0.6 nC Gate Drain Charge Q gd 1.6 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -0.95 V T j=25°C, I S= -0.75A, VGS=0V Reverse Recovery Time (3) trr 29 ns Tj=25°C, I S=- 0 . 9 A , di/dt=100A/ /H9262sReverse Recovery Charge (3) Qrr 31 nC P-Channel ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

N-CHANNEL TYPICAL CHARACTERISTICS

N-CHANNEL TYPICAL CHARACTERISTICS

P-CHANNEL TYPICAL CHARACTERISTICS

P-CHANNEL TYPICAL CHARACTERISTICS

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2005 Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE OUTLINE DIM Millimetres Inches MIN TYP MAX MIN TYP MAX A1 0.02 – 0.1 0. 0008 – 0.004 c 0.24 – 0.32 0.009 – 0.013 D 6.3 – 6.7 0.248 – 0.264 E 3.3 – 3.7 0.130 – 0.145 He 6.7 – 7.3 0.264 – 0.287 α – – 15° – – 15° β – 10° – – 10° – PACKAGE DIMENSIONS