ZXMD63C03X ZETEX | Alldatasheet

Document overview

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Technical content

N-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135V; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • DC - DC Converters
  • Power Management Functions
  • Disconnect switches
  • Motor control

ORDERING INFORMATION

(inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMD63C03XTA 7 12mm embossed 1000 units ZXMD63C03XTC 13 12mm embossed 4000 units DEVICE MARKING

  • ZXM63C03 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET MSOP8 ZXMD63C03X N-CHANNEL PROVISIONAL ISSUE A - JUNE 1999

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R θJA 143 °C/W Junction to Ambient (b)(d) R θJA 100 °C/W Junction to Ambient (a)(e) R θJA 120 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Drain-Source Voltage V DSS 30 -30 V Gate- Source Voltage V GS ± 20 V Continuous Drain Current (V GS=4.5V; T A=25°C)(b)(d) ( V GS=4.5V; T A=70°C)(b)(d) ID 2.3 1.8 -2.0 -1.6 A Pulsed Drain Current (c)(d) I DM 14 -9.6 A Continuous Source Current (Body Diode)(b)(d) I S 1.5 -1.4 A Pulsed Source Current (Body Diode)(c)(d) I SM 14 -9.6 A Power Dissipation at T A=25°C (a)(d) Linear Derating Factor PD 0.87 6.9 W mW/°C Power Dissipation at T A=25°C (a)(e) Linear Derating Factor PD 1.04 8.3 W mW/°C Power Dissipation at T A=25°C (b)(d) Linear Derating Factor PD 1.25 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ZXMD63C03X PROVISIONAL ISSUE A - JUNE 1999

0.1 10 100 0.0001 0.1 100 0 80 160 VDS - Drain-Source Voltage (V) Safe Operating Area 0.1 100 ID - Drain Current (A) DC 100ms D=0.1 D=0.2 Thermal Resistance (°C/W) 120 D=0.05 Pulse Width (s) Transient Thermal Impedance Max Power Dissipation (Watts) 1.4 0.8 T - Temperature (°) Derating Curve Refer Note (b) Single Pulse D=0.5 10ms 1ms 100us Pulse Width (s) 100 0.01 100.001 1 160 0.0001 10000.001 0.01 0.1 1 10 Transient Thermal Impedance Thermal Resistance (°C/W) D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse 100 140 120 100 Refer Note (a) 1.2 0.6 1.0 0.4 0.2 60 14020 40 100 120 Refer Note (b) Refer Note (a) Refer Note (a) ZXMD63C03X PROVISIONAL ISSUE A - JUNE 1999

0.1 10 100 0.0001 0.1 100 08 0 1 6 0 VDS - Drain-Source Voltage (V) Safe Operating Area 0.1 100 ID - Drain Current (A) DC 100ms D=0.1 D=0.2 Thermal Resistance (°C/W) 120 D=0.05 Pulse Width (s) Transient Thermal Impedance Max Power Dissipation (Watts) 1.4 0.8 T - Temperature (°) Derating Curve Refer Note (b) Single Pulse D=0.5 10ms 1ms 100us Pulse Width (s) 100 0.01 100.001 1 160 0.0001 10000.001 0.01 0.1 1 10 Transient Thermal Impedance Thermal Resistance (°C/W) D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse 100 140 120 100 Refer Note (a) 1.2 0.6 1.0 0.4 0.2 60 14020 40 100 120 Refer Note (a) Refer Note (a) Refer Note (b) ZXMD63C03X PROVISIONAL ISSUE A - JUNE 1999

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 30 V ID=250 µ A, V GS=0V Zero Gate Voltage Drain Current I DSS 1 µA VDS=30V, V GS=0V Gate-Body Leakage I GSS 100 nA VGS=± 20V, V DS=0V Gate-Source Threshold Voltage V GS(th) 1.0 V ID=250 µA, V DS= V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.135 0.200 Ω Ω VGS=10V, I D=1.7A VGS=4.5V, I D=0.85A Forward Transconductance (3) g fs 1.9 S V DS=10V,I D=0.85A DYNAMIC (3) Input Capacitance C iss 290 pF VDS=25 V, V GS=0V, f=1MHzOutput Capacitance C oss 70 pF Reverse Transfer Capacitance C rss 20 pF SWITCHING(2) (3) Turn-On Delay Time t d(on) 2.5 ns VDD =15V, I D=1.7A RG=6.1 Ω , R D=8.7 Ω (Refer to test circuit) Rise Time t r 4.1 ns Turn-Off Delay Time t d(off) 9.6 ns Fall Time t f 4.4 ns Total Gate Charge Q g 8n C VDS=24V,V GS=10V, ID=1.7A (Refer to test circuit) Gate-Source Charge Q gs 1.2 nC Gate Drain Charge Q gd 2n C SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.95 V T j=25°C, I S=1.7A, VGS=0V Reverse Recovery Time (3) t rr 16.9 ns T j=25°C, I F=1.7A, di/dt= 100A/ µs Reverse Recovery Charge(3) Q rr 9.5 nC (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JUNE 1999

N-CHANNEL TYPICAL CHARACTERISTICS Device type: ZXMD63N03X Author: Laurence Armstrong Date: 9th April 1999 Filename: 1P63N03.DWG 0.1 10 100 246 0.1 10 100 0.2 0.8 1.4 20050-100 0.1 100 VDS - Drain-Source Voltage (V) Output Characteristics 0.1 100 ID - Drain Current (A) VGS +25°C VDS=10V ID - Drain Current (A) 100 0.1 VGS - Gate-Source Voltage (V) Typical Transfer Characteristics RDS(on) - Drain-Source On-Resistance (Ω ) 0.01 ID - Drain Current (A) On-Resistance v Drain Current ID - Drain Current (A) 100 0.1 VDS - Drain-Source Voltage (V) Output Characteristics Normalised RDS(on) and VGS(th) 1.8 1.2 0.4 Tj - Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature ISD - Reverse Drain Current (A) 100 0.1 VSD - Source-Drain Voltage (V) Source-Drain Diode Forward Voltage T=150°C VGS=10V T=25°C RDS(on) ID=1.7A VGS=VDS ID=250uA VGS(th) 1 0 V8 V7 V 6V 5V 4.5V 3.5V +150°C 10V 8V 7V 6V VGS 4.5V 3.5V 101 1.6 1.0 1.4 0.8 0.6 01 5 0-50 100 3.5 5.52.5 3 4.5 5 0.4 1.0 0.6 1.2 T=150 C T=25 C 0.1 VGS=3V VGS=4.5V VGS=10V ZXMD63C03X PROVISIONAL ISSUE A - JUNE 1999

Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit 0.1 10 100 0 4 8 VDS - Drain Source Voltage (V) Capacitance v Drain-Source Voltage 250 500 C - Capacitance (pF) ID=1.7A VGS - Gate-Source Voltage (V) Q -Charge (nC) Gate-Source Voltage v Gate Charge VDS=24V Ciss Coss Crss Vgs=0V f=1Mhz450 200 400 350 150 100 300 VDS=15V 123 5 ZXMD63C03X PROVISIONAL ISSUE A - JUNE 1999

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V ID=-250 µ A, V GS=0V Zero Gate Voltage Drain Current I DSS -1 µA VDS=-30V, V GS=0V Gate-Body Leakage I GSS ±100 nA VGS=± 20V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V ID=-250 µA, V DS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.185 0.27 Ω Ω VGS=-10V, I D=-1.2A VGS=-4.5V, I D=-0.6A Forward Transconductance (3) g fs 0.92 S V DS=-10V,I D=-0.6A DYNAMIC (3) Input Capacitance C iss 270 pF VDS=-25 V, V GS=0V, f=1MHzOutput Capacitance C oss 80 pF Reverse Transfer Capacitance C rss 30 pF SWITCHING(2) (3) Turn-On Delay Time t d(on) 2.6 ns VDD =-15V, I D=-2.4A RG=6.2 Ω , R D=6.2 Ω (Refer to test circuit) Rise Time t r 4.8 ns Turn-Off Delay Time t d(off) 13.1 ns Fall Time t f 9.3 ns Total Gate Charge Q g 7n C VDS=-24V,V GS=-10V, ID=-1.2A (Refer to test circuit) Gate-Source Charge Q gs 1.2 nC Gate Drain Charge Q gd 2n C SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.95 V T j=25°C, I S=-1.2A, VGS=0V Reverse Recovery Time (3) t rr 21.4 ns T j=25°C, I F=-1.2A, di/dt= 100A/ µs Reverse Recovery Charge(3) Q rr 15.7 nC (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JUNE 1999

0.1 10 100 246 0.1 1 10 0.2 1.4 20050-100 0.1 100 -VDS - Drain-Source Voltage (V) Output Characteristics 0.1 100 -ID - Drain Current (A) -VGS10V VDS=-10V -ID - Drain Current (A) 0.1 -VGS - Gate-Source Voltage (V) Typical Transfer Characteristics RDS(on) - Drain-Source On-Resistance (Ω ) 10 0.1 -ID - Drain Current (A) On-Resistance v Drain Current -ID - Drain Current (A) 100 -VGS 0.1 -VDS - Drain-Source Voltage (V) Output Characteristics Normalised RDS(on) and VGS(th) Tj - Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature -ISD - Reverse Drain Current (A) 0.1 0.01 -VSD - Source-Drain Voltage (V) Source-Drain Diode Forward Voltage T=150°C T=25°C +150°C T=150°C VGS=-10V T=25°C RDS(on) ID=-1.2A VGS=VDS ID=-250uA VGS(th) 4.5V 3.5V 2.5V 8V 6V7V 1 1 10 10V 8V 7V 6V 4.5V 3.5V 2.5V 101 +25° C 1.5 0.5 1500 100-503.5 5.52.5 3 4.5 5 VGS=-3V VGS=-4.5V VGS=-10V ZXMD63C03X PROVISIONAL ISSUE A - JUNE 1999

P-CHANNEL TYPICAL CHARACTERISTICSTYPICAL CHARACTERISTICS Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit 0.1 10 100 0 4 8 -VDS - Drain Source Voltage (V) Capacitance v Drain-Source Voltage 500 C - Capacitance (pF) ID=-1.2A -VGS - Gate-Source Voltage (V) Q -Charge (nC) Gate-Source Voltage v Gate Charge VDS=-24VCiss Coss Crss Vgs=0V f=1Mhz VDS=-15V 3712 56 400 300 200 600 100 ZXMD63C03X PROVISIONAL ISSUE A - JUNE 1999

H E D e X 6 A A1 LC 1 234 5678 B Conforms to JEDEC MO-187 Iss A PACKAGE DIMENSIONS DIM Millimetres Inches MIN MAX MIN MAX A 1.10 0.043 A1 0.05 0.15 0.002 0.006 B 0.25 0.40 0.010 0.016 C 0.13 0.23 0.005 0.009 D 2.90 3.10 0.114 0.122 e 0.65 BSC 0.0256 BSC E 2.90 3.10 0.114 0.122 H 4.90 BSC 0.193 BSC L 0.40 0.70 0.016 0.028 q° 0° 6° 0° 6° PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong  Zetex plc 1999 Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - JUNE 1999