ZXMC4A16DN8 ZETEX | Alldatasheet

Document overview

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Technical content

N-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • Motor drive
  • LCD backlighting DEVICE MARKING
  • ZXMC 4A16 ZXMC4A16DN8 ISSUE 1 - NOVEMBER 2004 COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET SO8 PINOUT TOP VIEW DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMC4A16DN8TA 7” 12mm 500 ZXMC4A16DN8TC 13” 12mm 2,500

ORDERING INFORMATION

PARAMETER SYMBOL N-channel P-channe| UNIT Drain-source voltage V DSS 40 -40 V Gate-source voltage V GS /H1100620 /H1100620 V Continuous drain current (VGS= 10V; T A=25°C) (b)(d) (VGS= 10V; T A=70°C) (b)(d) (VGS= 10V; T A=25°C) (a)(d) ID 5.2 4.1 4.0 -4.7 -3.8 -3.6 A A A Pulsed drain current (c) IDM 24 -23 A Continuous source current (body diode) (b) IS 2.5 2.3 A Pulsed source current (body diode) (c) ISM 24 23 A Power dissipation at T A =25°C (a) (d) Linear derating factor PD 1.25 W mW/°C Power dissipation at T A =25°C (a) (e) Linear derating factor PD 1.8 W mW/°C Power dissipation at T A =25°C (b) (d) Linear derating factor PD 2.1 W mW/°C Operating and storage temperature range T j,T stg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL V ALUE UNIT Junction to ambient (a) (d) R/H9052JA 100 °C/W Junction to ambient (a) (e) R/H9052JA 70 °C/W Junction to ambient (b) (d) R/H9052JA 60 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300us, d<= 0.02. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. THERMAL RESISTANCE

PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS 40 V I D= 250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS 0.5 /H9262AV DS=40V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=±20V, V DS=0V Gate-Source Threshold Voltage V GS(th) 1.0 V I D= 250mA, V DS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.050 0.075 /H9024VGS= 10V, I D= 4.5A VGS= 4.5V, I D= 3.2A Forward Transconductance (1) (3) gfs 8.6 S V DS= 15V, I D= 4.5A DYNAMIC (3) Input Capacitance Ciss 770 pF VDS= 40V, V GS=0V f=1MHz Output Capacitance Coss 92 pF Reverse Transfer Capacitance Crss 61 pF SWITCHING (2) (3) Turn-On-Delay Time td(on) 3.3 ns VDD= 30V, I D=1 A RG ≅6.0 /H9024,V GS= 10V Rise Time tr 4.7 ns Turn-Off Delay Time td(off) 29 ns Fall Time tf 14 ns Total Gate Charge Qg 17 nC Gate-Source Charge Qgs 2.5 nC V DS= 30V, V GS= 10V ID= 4.5AGate Drain Charge Qgd 3.8 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.8 0.95 V T j=25°C, I S= 4.5A, VGS=0V Reverse Recovery Time (3) trr 20 ns Tj=25°C, I S= 2.5A, di/dt=100A/ /H9262sReverse Recovery Charge (3) Qrr 16 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -40 V I D= -250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS -1.0 /H9262AV DS= -40V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=±20V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V I D= -250 /H9262A, VDS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.060 0.100 /H9024VGS= -10V, I D= -3.8A VGS= -4.5V, I D= -2.9A Forward Transconductance (1) (3) gfs 6.8 S V DS= -15V, I D= -3.8A DYNAMIC (3) Input Capacitance C iss 1000 pF VDS= -20V, V GS=0V f=1MHz Output Capacitance C oss 180 pF Reverse Transfer Capacitance C rss 160 pF SWITCHING (2) (3) Turn-On-Delay Time t d(on) 3.7 ns VDD= -20V, I D= -1A RG ≅ 6.0 /H9024,V GS= 10V Rise Time t r 5.5 ns Turn-Off Delay Time t d(off) 33 ns Fall Time t f 18 ns Gate Charge Q g 15 nC V DS= -20V, V GS= -5V ID= -3.8A Total Gate Charge Q g 26 nC VDS= -20V, VGS= -10V ID= -3.8AGate-Source Charge Q gs 3.2 nC Gate Drain Charge Q gd 7.3 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.86 -0.95 V T j=25°C, I S= -3.4A, VGS=0V Reverse Recovery Time (3) trr 27 ns Tj=25°C, I S= -3A, di/dt=100A/ /H9262sReverse Recovery Charge (3) Qrr 25 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2004 Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE OUTLINE DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max H 5.80 6.20 0.228 0.244 /H90520° 8° 0° 8° PACKAGE DIMENSIONS