ZXMC4559DN8 ZETEX | Alldatasheet

Document overview

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Technical content

N-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ;I D= 4.7A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.105 ;I D= -3.9A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • Motor Drive
  • LCD backlighting DEVICE MARKING
  • ZXMC 4559 ZXMC4559DN8 ISSUE 5 - MAY 2005 SEMICONDUCTORS1 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMC4559DN8TA 7 ’‘ 12mm 500 units ZXMC4559DN8TC 13’‘ 12mm 2500 units

ORDERING INFORMATION

Q2 = P-CHANNELQ1 = N-CHANNEL SO8 Top view PINOUT

PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a) (d) R/H9052JA 100 °C/W Junction to Ambient (b) (e) R/H9052JA 69 °C/W Junction to Ambient (b) (d) R/H9052JA 58 °C/W THERMAL RESISTANCE Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300/H9262s - pulse width limited by maximum junction temperature. (d) For a device with one active die. (e) For device with 2 active die running at equal power. PARAMETER SYMBOL N-Channel P-Channel UNIT Drain-Source Voltage V DSS 60 -60 V Gate-Source Voltage V GS /H1100620 /H1100620 V Continuous Drain Current @V GS=10V; T A=25 /H11034C (b) (d) @VGS=10V; T A=25 /H11034C (b) (d) @VGS=10V; T A=25 /H11034C (a) (d) ID 4.7 3.7 3.6 -3.9 -2.8 -2.6 A A A Pulsed Drain Current (c) IDM 22.2 -18.3 A Continuous Source Current (Body Diode) (b) IS 3.4 -3.2 A Pulsed Source Current (Body Diode)(c) I SM 22.2 -18.3 A Power Dissipation at TA=25°C (a) (d) Linear Derating Factor PD 1.25 W mW/°C Power Dissipation at TA=25°C (a) (e) Linear Derating Factor PD 1.8 W mW/°C Power Dissipation at TA=25°C (b) (d) Linear Derating Factor PD 2.1 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS.

3 SEMICONDUCTORS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 60 V I D=250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS 1.0 /H9262AV DS=60V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) 1.0 V I D=250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.055 0.075 /H9024 /H9024 V GS=10V, I D=4.5A VGS=4.5V, I D=4.0A Forward Transconductance (1) (3) gfs 10.2 S V DS=15V,I D=4.5A DYNAMIC (3) Input Capacitance C iss 1063 pF VDS=30V, V GS=0V, f=1MHz Output Capacitance C oss 104 pF Reverse Transfer Capacitance C rss 64 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 3.5 ns VDD =30V, I D=1A RG≅6.0 /H9024,V GS=10V Rise Time t r 4.1 ns Turn-Off Delay Time t d(off) 26.2 ns Fall Time t f 10.6 ns Gate Charge Q g 11.0 nC V DS=30V,V GS=5V, ID=4.5A Total Gate Charge Q g 20.4 nC VDS=30V,V GS=10V, ID=4.5A Gate-Source Charge Q gs 4.1 nC Gate-Drain Charge Q gd 5.1 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.85 1.2 V T J=25°C, I S=5.5A, VGS=0V Reverse Recovery Time (3) trr 22 ns T J=25°C, I F=2.2A, di/dt= 100A/ /H9262sReverse Recovery Charge (3) Qrr 21.4 nC N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width /H11349300/H9262s. Duty cycle /H113492% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

5 SEMICONDUCTORS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -60 V I D=-250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS -1.0 /H9262AV DS=-60V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V I D=-250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.085 0.125 /H9024 /H9024 V GS=-10V, I D=-2.9A VGS=-4.5V, I D=-2.4A Forward Transconductance (1) (3) gfs 7.2 S V DS=-15V,I D=-2.9A DYNAMIC (3) Input Capacitance C iss 1021 pF VDS=-30 V, V GS=0V, f=1MHz Output Capacitance C oss 83.1 pF Reverse Transfer Capacitance C rss 56.4 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 3.5 ns VDD =-30V, I D=-1A RG 6.0 /H9024,V GS=-10V Rise Time t r 4.1 ns Turn-Off Delay Time t d(off) 35 ns Fall Time t f 10 ns Gate Charge Q g 12.1 nC V DS=-30V,V GS=-5V, ID=-2.9A Total Gate Charge Q g 24.2 nC VDS=-30V,V GS=-10V, ID=-2.9AGate-Source Charge Q gs 2.5 nC Gate-Drain Charge Q gd 3.7 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -0.95 V T J=25°C, I S=-3.4A, VGS=0V Reverse Recovery Time (3) trr 29.2 ns T J=25°C, I F=-2A, di/dt= 100A/ µsReverse Recovery Charge (3) Qrr 39.6 nC P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Width /H11349300/H9262s. Duty cycle /H113492% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 23450.01 0.1 -50 0 50 100 1500.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 100.01 0.1 100 1000 0.1 100 4.5V10V 3.5V VGS 2.5V Output Characteristics T = 25°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 3.5V 4.5V10V 2.5V Output Characteristics T = 150°C ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS= 10V T = 25°C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS= 10V ID =4 . 5 A VGS(th) VGS=VDS ID = 250uA Normalised RDS(on)and VGS(th) Tj Junction Temperature (°C) 4.5V 10V 3.5V 2.5V On-Resistance v Drain Current T = 25°C VGS RDS(on)Drain-Source On-Resistance(Ω) ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A) N-CHANNEL TYPICAL CHARACTERISTICS

7 SEMICONDUCTORS

0.1 1 100 200 400 600 800 1000 1200 1400 1600 CRSS COSS CISS VGS=0 V f=1 M H z C Capacitance (pF) VDS -D r a i n-S o u r c eV o l t a g e( V ) 0 5 10 15 20 250 ID =4 . 5 A VDS= 30V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) N-CHANNEL TYPICAL CHARACTERISTICS

P-CHANNEL TYPICAL CHARACTERISTICS

P-CHANNEL TYPICAL CHARACTERISTICS ZXMC4559DN8 ISSUE 5 - MAY 2005

9 SEMICONDUCTORS

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2005 DIM INCHES MILLIMETRES MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 e 0.050 BSC 1.27 BSC b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 /H90520/H110348/H110340/H110348/H11034 h 0.010 0.020 0.25 0.50 PACKAGE DIMENSIONS D E H L c eb Seating Plane Pin 1 A /H9052 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES