ZXMC3F31DN8 ZETEX | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • Low on-resistance
  • 4.5V gate drive capability
  • Low profile SOIC package

Applications

  • DC-DC Converters
  • SMPS
  • Load switching switches
  • Motor control
  • Backlighting

Ordering information

(inches) Tape width (mm) Quantity per reel ZXMC3F31DN8TA 7 12 500 Q1 N-Channel Q2 P-Channel D1S1 Top view N P

Drain-Source voltage VDSS 30 -30 V Gate-Source voltage VGS ±20 ±20 V Continuous Drain current @ VGS= 10V; TA=25°C (b)(d) @ VGS= 10V; TA=70°C (b)(d) @ VGS= 10V; TA=25°C (a)(d) @ VGS= 10V; TA=25°C (a)(e) @ VGS= 10V; TL=25°C (f)(d) ID 7.3 5.9 5.7 6.8 7.8 5.3 4.3 4.1 4.9 5.7 A Pulsed Drain current (c) IDM 33 23 A Continuous Source current (Body diode) (b)(d) IS 3.5 3.2 A Pulsed Source current (Body diode) (c)(d) ISM 33 23 A Power dissipation at TA =25°C (a)(d) Linear derating factor PD 1.25 W mW/°C Power dissipation at TA =25°C (a)(e) Linear derating factor PD 1.8 W mW/°C Power dissipation at TA =25°C (b)(d) Linear derating factor PD 2.1 W mW/°C Power dissipation at TL =25°C (f) (d) Linear derating factor PD 2.35 W mW/°C Operating and storage temperature range Tj, Tstg -55 to 150 °C Thermal resistance Parameter Symbol Value Unit Junction to ambient (a)(d) RθJA 100 °C/W Junction to ambient (a)(e) RθJA 70 °C/W Junction to ambient (b)(d) RθJA 60 °C/W Junction to lead (f) (d) RθJL 53 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) Mounted on FR4 PCB measured at t ≤ 10 sec. (c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. (d) For a device with one active die. (e) For a device with two active die running at equal power. (f) Thermal resistance from junction to so lder-point (at the end of the drain lead). Issue 1 - September 2008 2 © Diodes Incorporated 2008 www.zetex.com www.diodes.com

0.1 1 10 10m 100m 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100µ 1m 10m 100m 1 10 100 1k 100 100µ 1m 10m 100m 1 10 100 1k 100 0.1 1 10 10m 100m Note (a)(d) 100us 100ms RDS(ON) Limited 1ms N-channel Safe Operating Area NPN @ Single Pulse, Tamb=25°C DC 10ms ID Drain Current (A) VDS Drain-Source Voltage (V) One active die Two active die Derating Curve Max Power Dissipation (W) Temperature (°C) D=0.2 D=0.5 D=0.1 Transient Thermal Impedance Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) Single Pulse Tamb=25°C Pulse Power Dissipation Maximum Power (W) Pulse Width (s) Note (a)(d) PNP @ Single Pulse, Tamb=25°C DC 100us 1ms 10ms 100ms RDS(ON) Limited P-channel Safe Operating Area -VDS Drain-Source Voltage (V) -ID Drain Current (A) Issue 1 - September 2008 3 © Diodes Incorporated 2008 www.zetex.com www.diodes.com

Q1 N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage V(BR)DSS 30 V ID = 250μA, VGS=0V Zero Gate voltage Drain current IDSS 0.5 µA VDS=30V, VGS=0V Gate-Body leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-Source threshold voltage V GS(th) 1.0 3.0 V ID= 250μA, VDS=VGS Static Drain-Source on-state resistance (*) RDS(on) 0.024 0.039 Ω VGS= 10V, ID= 7.0A VGS= 4.5, ID= 6.0A Forward Transconductance (*) (†) gfs 16.5 S VDS= 15V, ID= 7.0A Dynamic (†) Input capacitance Ciss 608 pF Output capacitance Coss 132 pF Reverse transfer capacitance Crss 72 pF VDS= 15V, VGS=0V f=1MHz Switching (‡) (†) Turn-on-delay time td(on) 2.9 ns Rise time tr 3.3 ns Turn-off delay time td(off) 16 ns Fall time tf 8 ns V DD= 15V, VGS=10V ID= 1A RG ≅ 6.0Ω, Total Gate charge Qg 12.9 nC Gate-Source charge Qgs 2.5 nC Gate-Drain charge Qgd 2.52 nC V DS= 15V, VGS= 10V ID= 7A Source–Drain diode Diode forward voltage (*) VSD 0.82 1.2 V IS= 1.7A,VGS=0V Reverse recovery time (‡) trr 12 ns Reverse recovery charge(‡) Qrr 4.8 nC IS= 2.2A,di/dt=100A/μs NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - September 2008 4 © Diodes Incorporated 2008 www.zetex.com www.diodes.com

Q1 Typical characteristics 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 234 0.1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 100 1000 1E-3 0.01 0.1 4V5V10V 3.5V 2.5V Output Characteristics T = 25°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 10V 1.5V 2.5V 3.5V Output Characteristics T = 150°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = 10V T = 25°C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 7A VGS(th) VGS = VDS ID = 250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 10V 3.5V On-Resistance v Drain Current T = 25°C2.5V 4.5V VGS RDS(on) Drain-Source On-Resistance (W) ID Drain Current (A) Vgs = -3V T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A) Issue 1 - September 2008 5 © Diodes Incorporated 2008 www.zetex.com www.diodes.com

Q1 Typical characteristics –cntd. 11 0 100 200 300 400 500 600 700 800 900 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) VDS - Drain - Source Voltage (V) 0123456789 1 0 1 1 1 2 1 3 1 4 ID = 7A VDS = 15V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) Test circuits Issue 1 - September 2008 6 © Diodes Incorporated 2008 www.zetex.com www.diodes.com

Q2 P-channel electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage V(BR)DSS -30 V ID = -250μA, VGS=0V Zero Gate voltage Drain current IDSS -5.0 µA VDS=-30V, VGS=0V Gate-Body leakage IGSS -100 nA VGS=±20V, VDS=0V Gate-Source threshold voltage V GS(th) -1.0 -3.0 V ID= -250μA, VDS=VGS Static Drain-Source on-state resistance (*) RDS(on) 0.045 0.080 Ω VGS= -10V, ID= -5.0A VGS= -4.5V, ID= -4.0A Forward Transconductance (*) (†) gfs 14 S VDS= -15V, ID= -5.0A Dynamic (†) Input capacitance Ciss 670 pF Output capacitance Coss 126 pF Reverse transfer capacitance Crss 70 pF VDS= -15V, VGS=0V f=1MHz Switching (‡) (†) Turn-on-delay time td(on) 1.9 ns Rise time tr 3 ns Turn-off delay time td(off) 30 ns Fall time tf 21 ns V DD= -15V, VGS=-10V ID= -1A RG ≅ 6.0Ω, Total Gate charge Qg 12.7 nC Gate-Source charge Qgs 2 nC Gate-Drain charge Qgd 2.4 nC V DS= -15V, VGS= -10V ID= -5A Source–Drain diode Diode forward voltage (*) VSD -0.82 -1.2 V IS= -2A,VGS=0V Reverse recovery time (‡) trr 16.5 ns Reverse recovery charge(‡) Qrr 11.5 nC IS= -2.1A,di/dt=100A/μs NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - September 2008 7 © Diodes Incorporated 2008 www.zetex.com www.diodes.com

0.1 1 10 0.01 0.1 0.1 1 10 0.1 2.0 2.5 3.0 3.5 0.1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1E-3 0.01 0.1 4.5V 2.5V 10V 3.5V Output Characteristics T = 25°C VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 4V10V 2.5V 3.5V Output Characteristics T = 150°C VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = 10V T = 25°C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 5A VGS(th) VGS = VDS ID = 250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 4.5V 2.5V 10V 3.5V On-Resistance v Drain Current T = 25°C VGS RDS(on) Drain-Source On-Resistance (Ω) -ID Drain Current (A) Vgs = 0V T = 150°C T = 25°C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A) Issue 1 - September 2008 8 © Diodes Incorporated 2008 www.zetex.com www.diodes.com

VGS = 0V f = 1MHz C Capacitance (pF) -VDS - Drain - Source Voltage (V) 0 5 10 15 ID = 5A VDS = 15V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) Test circuits Issue 1 - September 2008 9 © Diodes Incorporated 2008 www.zetex.com www.diodes.com

Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. DIM Min. Max. Min. Max. H 0.228 0.244 5.80 6.20 U 0° 8° 0° 8° Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 1 - September 2008 10 © Diodes Incorporated 2008 www.zetex.com www.diodes.com

Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any p roduct or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warr anty is given and no liability whatsoever i s assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support devic e or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in th is publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflic t between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office. Quality of product Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts dire ctly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting dev ices. The possible damage to devices depends on the circum stances of the handling and transporting, and the nature of the device. The ext ent of damage can vary from immediate functional or parametric malfunction to de gradation of function or performance in use over time. Device s suspected of being affected should be replaced. Green compliance Diodes Zetex Semiconductors is committed to environmental excelle nce in all aspects of its operat ions which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: “Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Diodes Zetex sales offices Europe Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Diodes Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Diodes Incorporated 15660 N. Dallas Parkway Suite 850, Dallas TX75248, USA Telephone (1) 972 385 2810 www.diodes.com © 2008 Published by Diodes Incorporated Issue 1 - September 2008 11 © Diodes Incorporated 2008 www.zetex.com www.diodes.com