ZXMC3AM832 ZETEX | Alldatasheet

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Technical content

N-Channel V(BR)DSS = 30V; RDS(ON) = 0.12 ;I D= 3.7A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ;I D= -2.7A

DESCRIPTION

Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Reduced component count

FEATURES

  • Low on - resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • 3mm x 2mm MLP

APPLICATIONS

  • MOSFET gate drive
  • LCD backlight inverters
  • Motor control DEVICE MARKING C01 ZXMC3AM832 PROVISIONAL ISSUE E - JULY 2004 MPPS™ Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMC3AM832TA 7 ’‘ 8mm 3000 units ZXMC3AM832TC 13’‘ 8mm 10000 units

ORDERING INFORMATION

PROVISIONAL ISSUE E - JULY 2004 PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a)(f) RθJA 83.3 °C/W Junction to Ambient (b)(f) RθJA 51 °C/W Junction to Ambient (c)(f) RθJA 125 °C/W Junction to Ambient (d)(f) RθJA 111 °C/W Junction to Ambient (d)(g) RθJA 73.5 °C/W Junction to Ambient (e)(g) RθJA 41.7 °C/W THERMAL RESISTANCE Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW. PARAMETER SYMBOL N-Channel P-Channel UNIT Drain-Source Voltage V DSS 30 -30 V Gate-Source Voltage V GS /H1100620 /H1100620 V Continuous Drain Current@V GS=10V; T A=25 /H11034C (b)(f) @VGS=10V; T A=25 /H11034C(b)(f) @VGS=10V; T A=25 /H11034C (a)(f) ID 3.7 3.0 2.9 -2.7 -2.2 -2.1 A A Pulsed Drain Current I DM 12.4 -9.2 A Continuous Source Current (Body Diode) (b)(f) IS 2.4 -2.8 A Pulsed Source Current (Body Diode) I SM 12.4 -9.2 A Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.5 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 1 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 1.13 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/°C ABSOLUTE MAXIMUM RATINGS

PROVISIONAL ISSUE E - JULY 2004 11 0 10m 100m 0 25 50 75 100 125 1500.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100µ 1m 10m 100m 1 10 100 1k0 0.1 1 10 1000 100 125 150 175 200 225 0.1 1 10 1000.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 11 0 10m 100m Note (a)(f) 100us 100ms RDS(ON) Limited 1ms N-channel Safe Operating Area Single Pulse, Tamb=25°C DC 10ms ID Drain Current (A) VDS Drain-Source Voltage (V) 1oz Cu Note (d)(f) 1oz Cu Note (d)(g) 2oz Cu Note (a)(f) 2oz Cu Note (e)(g) Derating Curve Max Power Dissipation (W) Temperature (°C) Note (a)(f) D=0.2 D=0.5 D=0.1 Transient Thermal Impedance Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) 1oz copper Note (g) 1oz copper Note (f)2oz copper Note (f) 2oz copper Note (g) Thermal Resistance v Board Area Thermal Resistance (°C/W) B o a r dC uA r e a( s q c m ) 1oz copper Note (g) 2oz copper Note (g) 1oz copper Note (f) 2oz copper Note (f) Power Dissipation v Board Area Tamb=25°C Tjm a x=150°C Continuous PD Dissipation (W) B o a r dC uA r e a( s q c m ) DC 1s 100ms 10ms Note (a)(f) Single Pulse, Tamb=25°C 1ms 100us RDS(ON) Limited P-channel Safe Operating Area -VDS Drain-Source Voltage (V) -ID Drain Current (A) TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE E - JULY 2004 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS 30 V ID=250 µA, V GS=0V Zero Gate Voltage Drain Current I DSS 0.5 µA VDS=30V, V GS=0V Gate-Body Leakage I GSS 100 nA VGS=±20V, V DS=0V Gate-Source Threshold Voltage V GS(th) 1V ID=250 µA, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.106 0.12 0.18 Ω Ω VGS=10V, I D=2.5A VGS=4.5V, I D=2.0A Forward Transconductance (1)(3) gfs 3.5 S V DS=4.5V,I D=2.5A DYNAMIC (3) Input Capacitance C iss 190 pF VDS= 2 5V ,VGS=0V, f=1MHzOutput Capacitance C oss 38 pF Reverse Transfer Capacitance C rss 20 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.7 ns VDD =15V, I D=2.5A RG=6.0 Ω,V GS=10V Rise Time t r 2.3 ns Turn-Off Delay Time t d(off) 6.6 ns Fall Time t f 2.9 ns Gate Charge Q g 2.3 nC V DS=15V,V GS=5V, ID=2.5A Total Gate Charge Q g 3.9 nC VDS=15V,V GS=10V, ID=2.5AGate-Source Charge Q gs 0.6 nC Gate-Drain Charge Q gd 0.9 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.85 0.95 V T J=25°C, I S=1.7A, VGS=0V Reverse Recovery Time (3) trr 17.7 ns T J=25°C, I F=2.5A, di/dt= 100A/ µs Reverse Recovery Charge (3) Qrr 13.0 nC N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE E - JULY 2004 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V ID=-250 µA, V GS=0V Zero Gate Voltage Drain Current I DSS 1 /H9262AV DS=-30V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) -0.8 V I D=-250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.210 0.330 Ω Ω VGS=-10V, I D=-1.4A VGS=-4.5V, I D=-1.1A Forward Transconductance (1)(3) gfs 2.48 S V DS=-15V,I D=-1.4A DYNAMIC (3) Input Capacitance C iss 204 pF VDS=-15 V, V GS=0V, f=1MHzOutput Capacitance C oss 39.8 pF Reverse Transfer Capacitance C rss 25.8 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.5 ns VDD =-15V, I D=-1A RG=6.0 Ω,V GS=-10V Rise Time t r 2.8 ns Turn-Off Delay Time t d(off) 11.3 ns Fall Time t f 7.5 ns Gate Charge Q g 2.58 nC V DS=-15V,V GS=-5V, ID=-1.4A Total Gate Charge Q g 5.15 nC VDS=-15V,V GS=-10V, ID=-1.4AGate-Source Charge Q gs 0.65 nC Gate-Drain Charge Q gd 0.92 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -0.95 V T J=25°C, I S=-1.1A, VGS=0V Reverse Recovery Time (3) trr 18.6 ns T J=25°C, I F=-0.95A, di/dt= 100A/ µs Reverse Recovery Charge (3) Qrr 14.8 nC P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE E - JULY 2004 0.1 1 10 0.1 0.1 1 10 0.1 -50 0 50 100 1500.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.1 0.1 5V7V 4.5V 3.5V 2.5V Output Characteristics T = 25°C VGS 10V ID Drain Current (A) VDS Drain-Source Voltage (V) 2.5V 4.5V 7V10V Output Characteristics T = 150°C VGS 3.5V ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS= 10V T=2 5 ° C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS= 10V ID =2 . 5 A VGS(th) VGS=VDS ID = 250uA Normalised RDS(on)and VGS(th) Tj Junction Temperature (°C) 4.5V 10V 3.5V2.5V On-Resistance v Drain Current T=2 5 ° C 3V VGS RDS(on)Drain-Source On-Resistance ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A) N-CHANNEL TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE E - JULY 2004 0.1 1 100 100 150 200 250 300 CRSS COSS CISS VGS=0 V f=1 M H z C Capacitance (pF) VDS -D r a i n-S o u r c eV o l t a g e( V ) 012340 ID =2 . 5 A VDS= 15V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) N-CHANNEL TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE E - JULY 2004 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 12345 0.1 -50 0 50 100 1500.6 0.8 1.0 1.2 1.4 1.6 0.1 1 100.1 100 0.1 10V 3.5V -VGS 2.5V Output Characteristics T=2 5 ° C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 5V 4V 3.5V 1.5V 10V 2.5V Output Characteristics T = 150°C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS=1 0 V T=2 5 ° C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS=- 1 0 V ID =- 1 . 4 A VGS(th) VGS=VDS ID = -250uA Normalised RDS(on)and VGS(th) Tj Junction Temperature (°C) 10V 3.5V 2.5V On-Resistance v Drain Current T=2 5 ° C -VGS RDS(on)Drain-Source On-Resistance(Ω) -ID Drain Current (A) T = 150°C T=2 5 ° C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A) P-CHANNEL TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE E - JULY 2004 0.1 1 100 100 150 200 250 300 CRSS COSS CISS VGS=0 V f=1 M H z C Capacitance (pF) -VDS -D r a i n-S o u r c eV o l t a g e( V ) 02460 ID = -1.4A VDS= -15V G a t e - S o u r c eV o l t a g evG a t eC h a r g eCapacitance v Drain-Source Voltage Q-C h a r g e( n C ) -VGS Gate-Source Voltage (V) P-CHANNEL TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE E - JULY 2004 Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2004 CONTROLLING DIMENSIONS IN MILLIMETERS APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max D 3.00 BSC 0.118 BSC /H9052 0/H1103412/H110340/H1103412/H11034 PACKAGE DIMENSIONS