ZXMC3A18DN8 ZETEX | Alldatasheet

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Technical content

1 SEMICONDUCTORS

N-Channel = V(BR)DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • Motor Drive
  • LCD backlighting DEVICE MARKING
  • ZXMC 3A18 ZXMC3A18DN8 DRAFT ISSUE C - JUNE 2003 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMC3A18DN8TA 7” 12mm 500 units ZXMC3A18DN8TC 13” 12mm 2500 units

ORDERING INFORMATION

Q1 = N-channel Q2 = P-channel

PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a) (d) R/H9052JA 100 °C/W Junction to Ambient (a) (e) R/H9052JA 70 °C/W Junction to Ambient (b) (d) R/H9052JA 60 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300/H9262s, d/H11021= 0.02. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current (VGS= 10V; T A=25°C) (b)(d) (VGS= 10V; T A=70°C) (b)(d) (VGS= 10V; T A=25°C) (a)(d) ID 7.6 6.1 5.8 -6.3 -5.0 -4.8 A A A Pulsed Drain Current (c) IDM 37 -30 A Continuous Source Current (Body Diode) (b) IS 3.6 tbd A Pulsed Source Current (Body Diode) (c) ISM 37 30 A Power Dissipation at T A =25°C (a) (d) Linear Derating Factor PD 1.25 W mW/°C Power Dissipation at T A =25°C (a) (e) Linear Derating Factor PD 1.8 W mW/°C Power Dissipation at T A =25°C (b) (d) Linear Derating Factor PD 2.1 W mW/°C Operating and Storage Temperature Range T j,T stg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS 30 V I D= 250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS 0.5 /H9262AV DS=30V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=±20V, V DS=0V Gate-Source Threshold Voltage V GS(th) 1.0 V I D= 250 /H9262A, V DS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.025 0.030 /H9024 /H9024 VGS= 10V, I D= 5.8A VGS= 4.5V, I D= 5.3A Forward Transconductance (1) (3) gfs 17.5 S V DS= 15V, I D= 5.8A DYNAMIC (3) Input Capacitance C iss 1800 pF VDS= 25V, V GS=0V f=1MHz Output Capacitance C oss 289 pF Reverse Transfer Capacitance C rss 178 pF SWITCHING (2) (3) Turn-On-Delay Time t d(on) 5.5 ns VDD= 15V, I D=6A RG ≅ 6.0 /H9024, VGS = 10V Rise Time t r 8.7 ns Turn-Off Delay Time t d(off) 33 ns Fall Time t f 8.5 ns Gate Charge Q g 19.4 nC V DS= 15V, V GS=5 V ID= 3.5A Total Gate Charge Q g 36 nC VDS= 15V, V GS= 10V ID= 3.5AGate-Source Charge Q gs 5.5 nC Gate-Drain Charge Q gd 7.0 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.95 V T j=25°C, I S= 6A, VGS=0V Reverse Recovery Time (3) trr 20.5 ns Tj=25°C, I F= 6A, di/dt=100A/ /H9262sReverse Recovery Charge (3) Qrr 41.5 nC N-Channel ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width /H11349300ms; Duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

ADVANCE INFORMATIONZXMC3A18DN8 SEMICONDUCTORS DRAFT ISSUE C - JUNE 2003 TYPICAL CHARACTERISTICS

PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V I D= -250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS -1.0 /H9262AV DS=-30V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=±20V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V I D= 250 /H9262A, V DS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.035 0.050 /H9024 /H9024 VGS= -10V, I D= -4.8A VGS= -4.5V, I D= -4.0A Forward Transconductance (1) (3) gfs tbd S V DS= -15V, I D= -4.8A DYNAMIC (3) Input Capacitance C iss 1630 pF VDS= -15V, V GS=0V f=1MHz Output Capacitance C oss 320 pF Reverse Transfer Capacitance C rss 210 pF SWITCHING (2) (3) Turn-On-Delay Time t d(on) 9.2 ns VDD= -15V, I D=-1A RG ≅ 6.0 /H9024, VGS = 10V Rise Time t r 18 ns Turn-Off Delay Time t d(off) 96 ns Fall Time t f 60 ns Gate Charge Q g tbd nC V DS= -15V, V GS= -5V ID= -5.0A Total Gate Charge Q g 41 nC VDS= -15V, V GS= -10V ID= -5.0AGate-Source Charge Q gs 5.2 nC Gate-Drain Charge Q gd 7.3 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.95 V T j=25°C, I S= -tbd, VGS=0V Reverse Recovery Time (3) trr tbd ns Tj=25°C, I F= -tbd, di/dt=100A/ /H9262sReverse Recovery Charge (3) Qrr tbd nC P-Channel ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width /H11349300ms; Duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex plc 2003 ADVANCE INFORMATION Controlling dimensions are in millimetres. Approximate conversions are given in inches D E H L c eb Seating Plane Pin 1 A /H9052 PACKAGE OUTLINE DIM Millimetres Inches DIM Millimetres Inches Min Max Min Max Min Max Min Max H 5.80 6.20 0.228 0.244 /H92580° 8° 0° 8° PACKAGE DIMENSIONS