ZXMC3A17DN8_05 ZETEX | Alldatasheet

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Technical content

1 SEMICONDUCTORS

N-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • Motor drive
  • LCD backlighting DEVICE MARKING
  • ZXMC 3A17 ZXMC3A17DN8 ISSUE 1 - OCTOBER 2005 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMC3A17DN8TA 7” 12mm 500 units ZXMC3A17DN8TC 13” 12mm 2500 units

ORDERING INFORMATION

Q2 = P-channel Top View PINOUT SO8 Q1 = N-channel

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) (d) R/H9052JA 100 °C/W Junction to Ambient (a) (e) R/H9052JA 70 °C/W Junction to Ambient (b) (d) R/H9052JA 60 °C/W NOTES: (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width = 300/H9262s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with two active die running at equal power. THERMAL RESISTANCE PARAMETER SYMBOL N-channel P-channel UNIT Drain-Source Voltage V DSS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current (VGS= 10V; T A=25°C) (b)(d) (VGS= 10V; T A=70°C) (b)(d) (VGS= 10V; T A=25°C) (a)(d) ID 5.4 4.3 4.1 -4.4 -3.6 -3.4 A Pulsed Drain Current (c) IDM 23 -20 A Continuous Source Current (Body Diode) (b) IS 2.6 -2.5 A Pulsed Source Current (Body Diode) (c) ISM 23 -20 A Power Dissipation at T A =25°C (a) (d) Linear Derating Factor PD 1.25 W mW/°C Power Dissipation at T A =25°C (a) (e) Linear Derating Factor PD 1.8 W mW/°C Power Dissipation at T A =25°C (b) (d) Linear Derating Factor PD 2.1 W mW/°C Operating and Storage Temperature Range T j,T stg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS 30 V I D=2 5 0/H9262A, V GS=0V Zero Gate Voltage Drain Current IDSS 0.5 /H9262AV DS=30V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=±20V, V DS=0V Gate-Source Threshold Voltage VGS(th) 1.0 V I D=2 5 0/H9262A, V DS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.050 0.065 /H9024 /H9024 V GS= 10V, I D=7 . 8 A VGS=4 . 5 V ,ID=6 . 8 A Forward Transconductance (1) (3) gfs 10 S V DS= 10V, I D=7 . 8 A DYNAMIC (3) Input Capacitance C iss 600 pF VDS= 25V, V GS=0V f=1MHz Output Capacitance C oss 104 pF Reverse Transfer Capacitance C rss 58.5 pF SWITCHING (2) (3) Turn-On-Delay Time t d(on) 2.9 ns VDD=1 5 V ,ID=3.5A RG ≅ 6.0 /H9024, VGS =1 0 V Rise Time t r 6.4 ns Turn-Off Delay Time t d(off) 16 ns Fall Time t f 11.2 ns Gate Charge Q g 6.9 nC V DS= 15V, V GS=5 V ID=3 . 5 A Total Gate Charge Q g 12.2 nC VDS= 15V, V GS=1 0 V ID=3 . 5 AGate-Source Charge Q gs 1.7 nC Gate-Drain Charge Q gd 2.4 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.85 0.95 V T j=25°C, I S=3 . 2 A , VGS=0V Reverse Recovery Time (3) trr 18.8 ns Tj=25°C, I F=3 . 5 A , di/dt=100A/ /H9262sReverse Recovery Charge (3) Qrr 14.1 nC N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) (1) Measured under pulsed conditions. Pulse width /H11349300ms; Duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

PARAMETER SYMBOL MIN . TYP. MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS -30 V I D= -250 /H9262A, V GS=0V Zero Gate Voltage Drain Current IDSS -1.0 /H9262AV DS= -30V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=±20V, V DS=0V Gate-Source Threshold Voltage VGS(th) -1.0 V I D= -250 /H9262A, V DS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.070 0.110 /H9024 /H9024 V GS= -10V, I D=- 3 . 2 A VGS= -4.5V, I D= -2.5A Forward Transconductance (1) (3) gfs 6.4 S V DS= -15V, I D= -3.2A DYNAMIC (3) Input Capacitance C iss 630 pF VDS= -15V, V GS=0V f=1MHz Output Capacitance C oss 113 pF Reverse Transfer Capacitance Crss 78 pF SWITCHING (2) (3) Turn-On-Delay Time t d(on) 1.7 ns VDD=- 1 5 V ,ID=- 1 A RG ≅ 6.0 /H9024, VGS= -10V Rise Time t r 2.9 ns Turn-Off Delay Time t d(off) 29.2 ns Fall Time t f 8.7 ns Gate Charge Q g 8.3 nC V DS= -15V, V GS=- 5 V ID= -3.2A Total Gate Charge Q g 15.8 nC VDS= -15V, V GS= -10V ID= -3.2A Gate-Source Charge Q gs 1.8 nC Gate Drain Charge Q gd 2.8 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -0.95 V T j=25°C, I S= -2.5A, VGS=0V Reverse Recovery Time (3) trr 19.5 ns Tj=25°C, I S= -1.7A, di/dt=100A/ /H9262sReverse Recovery Charge (3) Qrr 16.3 nC P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES: (1) Measured under pulsed conditions. Pulse width /H11349300ms; Duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

N-CHANNEL TYPICAL CHARACTERISTICS ZXMC3A17DN8 SEMICONDUCTORS ISSUE 1 - OCTOBER 2005

N-CHANNEL TYPICAL CHARACTERISTICS ZXMC3A17DN8 SEMICONDUCTORS ISSUE 1 - OCTOBER 2005

P-CHANNEL TYPICAL CHARACTERISTICS ZXMC3A17DN8 SEMICONDUCTORS ISSUE 1 - OCTOBER 2005

P-CHANNEL TYPICAL CHARACTERISTICS ZXMC3A17DN8 SEMICONDUCTORS ISSUE 1 - OCTOBER 2005

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2005 Controlling dimensions are in millimeters. Approximate conversions are given in inches SO8 PACKAGE OUTLINE (Conforms to JEDEC MS-012AA Iss. C) DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max H 5.80 6.20 0.228 0.244 /H90520° 8° 0° 8° PACKAGE DIMENSIONS