ZXMC3A16DN8 ZETEX | Alldatasheet

Document overview

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Technical content

N-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ;I D= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ;I D= -5.4A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • Motor Drive
  • LCD backlighting DEVICE MARKING ZXMC 3A16 ZXMC3A16DN8 PROVISIONAL ISSUE F - JULY 2004 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMC3A16DN8TA 7 ’‘ 12mm 500 units ZXMC3A16DN8TC 13’‘ 12mm 2500 units

ORDERING INFORMATION

Q2 = P-CHANNELQ1 = N-CHANNEL SO8 Top view PINOUT

PROVISIONAL ISSUE F - JULY 2004 PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a)(d) RθJA 100 °C/W Junction to Ambient (b)(e) RθJA 70 °C/W Junction to Ambient (b)(d) RθJA 60 °C/W THERMAL RESISTANCE Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. PARAMETER SYMBOL N-Channel P-Channel UNIT Drain-Source Voltage V DSS 30 -30 V Gate-Source Voltage V GS /H1100620 /H1100620 V Continuous Drain Current@V GS=10V; T A=25 /H11034C (b)(d) @VGS=10V; T A=70 /H11034C (b)(d) @VGS=10V; T A=25 /H11034C (a)(d) ID 6.4 5.1 4.9 -5.4 -4.3 -4.1 A A A Pulsed Drain Current (c) IDM 30 -25 A Continuous Source Current (Body Diode) (b) IS 3.4 -3.2 A Pulsed Source Current (Body Diode) (c) ISM 30 -25 A Power Dissipation at TA=25°C (a)(d) Linear Derating Factor PD 1.25 W mW/°C Power Dissipation at TA=25°C (a)(e) Linear Derating Factor PD 1.8 W mW/°C Power Dissipation at TA=25°C (b)(d) Linear Derating Factor PD 2.1 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

PROVISIONAL ISSUE F - JULY 2004 CHARACTERISTICS

PROVISIONAL ISSUE F - JULY 2004 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS 30 V ID=250 µA, V GS=0V Zero Gate Voltage Drain Current I DSS 0.5 µA VDS=30V, V GS=0V Gate-Body Leakage I GSS 100 nA VGS=±20V, V DS=0V Gate-Source Threshold Voltage V GS(th) 1V ID=250 µA, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.035 0.050 /H9024 /H9024 VGS=10V, I D=9A VGS=4.5V, I D=7.4A Forward Transconductance (1)(3) gfs 13.5 S V DS=15V,I D=9A DYNAMIC (3) Input Capacitance C iss 796 pF VDS= 2 5V ,VGS=0V, f=1MHzOutput Capacitance C oss 137 pF Reverse Transfer Capacitance C rss 84 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 3.0 ns VDD =15V, I D=3.5A RG=6.0 Ω,V GS=10V Rise Time t r 6.4 ns Turn-Off Delay Time t d(off) 21.6 ns Fall Time t f 9.4 ns Gate Charge Q g 9.2 nC V DS=15V,V GS=5V, ID=3.5A Total Gate Charge Q g 17.5 nC VDS=15V,V GS=10V, ID=3.5AGate-Source Charge Q gs 2.3 nC Gate-Drain Charge Q gd 3.1 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.85 0.95 V T J=25°C, I S=5.1A, VGS=0V Reverse Recovery Time (3) trr 17.8 ns T J=25°C, I F=3.5A, di/dt= 100A/ µs Reverse Recovery Charge (3) Qrr 11.6 nC N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE F - JULY 2004 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V ID=-250 µA, V GS=0V Zero Gate Voltage Drain Current I DSS -1.0 /H9262AV DS=-30V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) 1.0 V I D=-250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.048 0.070 /H9024 /H9024 V GS=-10V, I D=-4.2A VGS=-4.5V, I D=-3.4A Forward Transconductance (1)(3) gfs 9.2 S V DS=-15V,I D=-4.2A DYNAMIC (3) Input Capacitance C iss 970 pF VDS=-15 V, V GS=0V, f=1MHzOutput Capacitance C oss 166 pF Reverse Transfer Capacitance C rss 116 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 3.8 ns VDD =-15V, I D=-1A RG=6.0 Ω,V GS=-10V Rise Time t r 6.1 ns Turn-Off Delay Time t d(off) 35 ns Fall Time t f 19 ns Gate Charge Q g 12.9 nC V DS=-15V,V GS=-5V, ID=-4.2A Total Gate Charge Q g 24.9 nC VDS=-15V,V GS=-10V, ID=-4.2AGate-Source Charge Q gs 2.67 nC Gate-Drain Charge Q gd 3.86 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -0.95 V T J=25°C, I S=-3.6A, VGS=0V Reverse Recovery Time (3) trr 21.2 ns T J=25°C, I F=-2A, di/dt= 100A/ µs Reverse Recovery Charge (3) Qrr 18.7 nC P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE F - JULY 2004 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 12340.1 -50 0 50 100 1500.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 100.01 0.1 100 100 VGS 2.5V 1.5V 10V 4V Output Characteristics T = 25°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 1.5V 10V 2.5V 3.5V Output Characteristics T = 150°C 4V ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS= 10V T = 25°C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS= 10V ID =1 . 5 A VGS(th) VGS=VDS ID = 250uA Normalised RDS(on)and VGS(th) Tj Junction Temperature (°C) 10V 2.5V On-Resistance v Drain Current T = 25°C VGS RDS(on)Drain-Source On-Resistance(Ω) ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A) N-CHANNEL TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE F - JULY 2004 0.1 1 100 200 400 600 800 1000 1200 CRSS COSS CISS VGS=0 V f=1 M H z C Capacitance (pF) VDS -D r a i n-S o u r c eV o l t a g e( V ) 0 5 10 15 200 ID =3 . 5 A VDS= 15V G a t e - S o u r c eV o l t a g evG a t eC h a r g eCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) N-CHANNEL TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE F - JULY 2004 0.1 1 100.01 0.1 0.1 1 100.01 0.1 1230.1 -50 0 50 100 1500.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 100.01 0.1 100 0.1 100 1.5V 10V 4V 3.5V -VGS 2.5V Output Characteristics T=2 5 ° C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 4V 3.5V 1.5V 10V 2.5V Output Characteristics T = 150°C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS=1 0 V T = 25°C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS=- 1 0 V ID = -4.2A VGS(th) VGS=VDS ID = -250uA Normalised RDS(on)and VGS(th) Tj Junction Temperature (°C) 1.5V 10V 3.5V 2.5V On-Resistance v Drain Current T=2 5 ° C -VGS RDS(on)Drain-Source On-Resistance(Ω) -ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A) P-CHANNEL TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE F - JULY 2004 0.1 1 100 200 400 600 800 1000 1200 1400 CRSS COSS CISS VGS=0 V f=1 M H z C Capacitance (pF) -VDS -D r a i n-S o u r c eV o l t a g e( V ) 0 5 10 15 20 250 -ID =4 . 2 A -VDS= 15V G a t e - S o u r c eV o l t a g evG a t eC h a r g eCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) P-CHANNEL TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE F - JULY 2004 Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2004 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max H 5.80 6.20 0.228 0.244 /H90520° 8° 0° 8° PACKAGE DIMENSIONS