ZXM66P02N8_04 ZETEX | Alldatasheet

Document overview

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Technical content

(BR)DSS=-20V; RDS(ON)=0.025 D=-8.0A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • DC - DC Converters
  • Power Management Functions
  • Disconnect switches
  • Motor control

ORDERING INFORMATION

DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXM66P02N8TA 7” 12mm 500 units ZXM66P02N8TC 7” 12mm 2500 units DEVICE MARKING

  • ZXM6 6P02 20V P-CHANNEL ENHANCEMENT MODE MOSFET SO81234 8765 S S S D D D Top View

PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a) R θJA 80 °C/W Junction to Ambient (b) R θJA 50 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H1108810 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10/H9262s - pulse width limited by maximum junction temperature. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -20 V Gate- Source Voltage V GS ±12 V Continuous Drain Current V GS =-4.5V; T A=25°C (b) VGS =-4.5V; T A=70°C (b) VGS =-4.5V; T A=25°C (a) ID -8.0 -6.5 -6.4 A Pulsed Drain Current (c) I DM -28 A Continuous Source Current (Body Diode)(b) I S -4.15 A Pulsed Source Current (Body Diode)(c) I SM -28 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 1.56 12.5 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 2.5 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNI T CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -20 V ID=-250 µ A, V GS =0V Zero Gate Voltage Drain Current I DSS -1 µ A VDS =-16V, V GS =0V Gate-Body Leakage I GSS -100 nA VGS =±12V, V DS =0V Gate-Source Threshold Voltage V GS(th) -0.7 V ID=-250 µ A, V DS =V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.025 0.045 Ω Ω V GS =-4.5V, I D=-3.2A VGS =-2.5V, I D=-2.7A Forward Transconductance (1)(3) g fs 13.3 S V DS =-10V,I D=-3.2A DYNAMIC (3) Input Capacitance C iss 2068 pF VDS =-15 V, V GS =0V, f=1MHzOutput Capacitance C oss 1038 pF Reverse Transfer Capacitance C rss 506 pF SWITCHING(2) (3) Turn-On Delay Time t d(on) 14.0 ns VDD =-10V, I D=-3.2A RG=6.0 Ω ,V GS =-5V Rise Time t r 44.3 ns Turn-Off Delay Time t d(off) 118.4 ns Fall Time t f 98.4 ns Total Gate Charge Q g 43.3 - nC VDS =-10V,V GS =-4.5V ID=-3.2AGate-Source Charge Q gs 3.5 - nC Gate Drain Charge Q gd 21.3 - nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.95 V T j=25°C, I S=-3.2A, VGS =0V Reverse Recovery Time (3) t rr 23.1 ns T j=25°C, I F=-3.2A, di/dt= 100A/ µ s Reverse Recovery Charge(3) Q rr 12.2 nC (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße 19 47 Mall Drive, Unit 4 3701-04 Metroplaza, Tower 1 agents and distributors in D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong  Zetex plc 2000 Telefon: (49) 89 45 49 49 0 Telephone: (631) 543-7100 Telephone:(852) 26100 611 Fax: (49) 89 45 49 49 49 Fax: (631) 864-7630 Fax: (852) 24250 494 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max A 4.80 4.98 0.189 0.196 B 1.27 BSC 0.05 BSC C 0.53 REF 0.02 REF D 0.36 0.46 0.014 0.018 E 3.81 3.99 0.15 0.157 F 1.35 1.75 0.05 0.07 G 0.10 0.25 0.004 0.010 J 5.80 6.20 0.23 0.24 K 0 °8 °0 °8 ° L 0.41 1.27 0.016 0.050