ZXM64P03X ZETEX | Alldatasheet

Document overview

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Technical content

V(BR)DSS=-30V; RDS(ON)=0.075V; ID=-3.8A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • DC - DC Converters
  • Power Management Functions
  • Disconnect switches
  • Motor control

ORDERING INFORMATION

(inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXM64P03XTA 7 12mm embossed 1000 units ZXM64P03XTC 13 12mm embossed 4000 units DEVICE MARKING

  • ZXM4P03 30V P-CHANNEL ENHANCEMENT MODE MOSFET MSOP8 ZXM64P03X 1234 8765 S S S G D D D D 145 PROVISIONAL ISSUE A - JULY 1999

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 70 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate- Source Voltage V GS ± 20 V Continuous Drain Current (V GS=4.5V; T A=25°C)(b) ( V GS=4.5V; T A=70°C)(b) ID -3.8 -3.0 A Pulsed Drain Current (c) I DM -19 A Continuous Source Current (Body Diode)(b) I S -2.3 A Pulsed Source Current (Body Diode)(c) I SM -19 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.8 14.4 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C PROVISIONAL ISSUE A - JULY 1999

0.1 10 100 0.0001 100 08 0 1 6 0 -VDS - Drain-Source Voltage (V) Safe Operating Area 100m 100 -ID - Drain Current (A) D=0.1 D=0.2 Thermal Resistance (°C/W) Max Power Dissipation (Watts) 2.0 1.0 T - Temperature (°C) Derating Curve Single Pulse D=0.5 Themal Resistance (°C/W) 0.00010 1000 120 Single Pulse D=0.5 D=0.2 D=0.1 0.5 1.5 140120100604020 0.1 Pulse Width (s) Transient Thermal Impedance Pulse Width (s) Transient Thermal Impedance Refer Note (b) Refer Note (a) Refer Note (b) Refer Note (a) CHARACTERISTICS DC 100ms 10ms 1ms 100us Refer Note (a) 147 PROVISIONAL ISSUE A - JULY 1999

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V ID=-250 µ A, V GS=0V Zero Gate Voltage Drain Current I DSS -1 µA VDS=-30V, V GS=0V Gate-Body Leakage I GSS ±100 nA VGS=± 20V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V ID=-250 µA, V DS= VGS Static Drain-Source On-State Resistance (1) R DS(on) 0.075 0.100 Ω Ω VGS=-10V, I D=-2.4A VGS=-4.5V, I D=-1.2A Forward Transconductance (3) g fs 2.3 S V DS=-10V,I D=-1.2A DYNAMIC (3) Input Capacitance C iss 825 pF VDS=-25 V, V GS=0V, f=1MHzOutput Capacitance C oss 250 pF Reverse Transfer Capacitance C rss 80 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 4.4 ns VDD =-15V, I D=-2.4A RG=6.2 Ω , R D=6.2 Ω (Refer to test circuit) Rise Time t r 6.2 ns Turn-Off Delay Time t d(off) 40 ns Fall Time t f 29.2 ns Total Gate Charge Q g 46 nC VDS=-24V,V GS=-10V, ID=-2.4A (Refer to test circuit) Gate-Source Charge Q gs 9n C Gate Drain Charge Q gd 11.5 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.95 V T j=25°C, I S=-2.4A, VGS=0V Reverse Recovery Time (3) t rr 30.2 ns T j=25°C, I F=-2.4A, di/dt= 100A/ µs Reverse Recovery Charge(3) Q rr 27.8 nC (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. 148 ZXM64P03X PROVISIONAL ISSUE A - JULY 1999

0.1 10 100 2.5 6 0.1 100 0.2 0.8 1.4 +200 0.1 10 100 -VDS - Drain-Source Voltage (V) Output Characteristics 100m 100 -ID - Drain Current (A) -VGS10V VDS=-10V -ID - Drain Current (A) 100 100m -VGS - Gate-Source Voltage (V) Typical Transfer Characteristics RDS(on) - Drain-Source On-Resistance (Ω ) 100m 10m -ID - Drain Current (A) On-Resistance v Drain Current -ID - Drain Current (A) 100 100m -VDS - Drain-Source Voltage (V) Output Characteristics Normalised RDS(on) and VGS(th) 1.7 Tj - Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature -ISD - Reverse Drain Current (A) 100 10m -VSD - Source-Drain Voltage (V) Source-Drain Diode Forward Voltage T=+150 C T=+25 C T=+150°C VGS=-10V T=+25°C RDS(on) ID=-2.4A VGS=VDS ID=-250uA VGS(th) 8V 6V 5V 4.5V 3.5V +25°C +150°C 10V 8V 6V -VGS 4.5V 3.5V 2.5V 5.554.543.53 +1000-100 1.5 1.3 1.1 0.9 0.7 0.5 101 Vgs=-4.5V Vgs=-10V Vgs=-3V 1.21.00.60.4 100m TYPICAL CHARACTERISTICS 149 ZXM64P03X PROVISIONAL ISSUE A - JULY 1999

0.1 1 100 0 10 40 -VDS - Drain Source Voltage (V) Capacitance v Drain-Source Voltage 800 1600 C - Capacitance (pF) ID=-2.4A -VGS - Gate-Source Voltage (V) Q -Charge (nC) Gate-Source Voltage v Gate Charge VDS=-24V Ciss Coss Crss Vgs=0V f=1MHz 1200 400 VDS=-15V 20 30 TYPICAL CHARACTERISTICS Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit ZXM64P03X 150 PROVISIONAL ISSUE A - JULY 1999

H E D e X 6 A A1 LC 1 234 5678 B Conforms to JEDEC MO-187 Iss A PACKAGE DIMENSIONS PAD LAYOUT DETAILS 152 DIM Millimetres Inches MIN MAX MIN MAX A 1.10 0.043 A1 0.05 0.15 0.002 0.006 B 0.25 0.40 0.010 0.016 C 0.13 0.23 0.005 0.009 D 2.90 3.10 0.114 0.122 e 0.65 BSC 0.0256 BSC E 2.90 3.10 0.114 0.122 H 4.90 BSC 0.193 BSC L 0.40 0.70 0.016 0.028 q° 0° 6° 0° 6° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong  Zetex plc 1999 Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - JULY 1999