ZXM64N03X_05 ZETEX | Alldatasheet

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Technical content

1 SEMICONDUCTORS

30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • DC - DC converters
  • Power management functions
  • Disconnect switches
  • Motor control

ORDERING INFORMATION

(inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXM64N03XTA 7 12 embossed 1,000 ZXM64N03XTC 13 12 embossed 4,000 DEVICE MARKING ZXM4P03 MSOP8 S S S G D D D D Pin out Top view

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 70 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H1108810 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 30 V Gate- Source Voltage VGS /H1100620 V Continuous Drain Current (VGS=4.5V; T A=25 °C)(b) (VGS=4.5V; T A=70 °C)(b) ID 5.0 4.0 A Pulsed Drain Current (c) IDM 30 A Continuous Source Current (Body Diode)(b) IS 2.4 A Pulsed Source Current (Body Diode)(c) ISM 30 A Power Dissipation at T A=25 °C( a ) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A=25 °C( b ) Linear Derating Factor PD 1.8 14.4 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS 30 V ID=-250 µA, V GS=0V Zero Gate Voltage Drain Current I DSS 1 µA VDS=30V, V GS=0V Gate-Body Leakage I GSS ±100 nA VGS=± 20V, V DS=0V Gate-Source Threshold Voltage V GS(th) 1.0 V ID=-250 µA, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.045 0.060 Ω Ω VGS=10V, I D=3.7A VGS=4.5V, I D=1.9A Forward Transconductance (3) g fs 4.3 S V DS=10V,I D=-1.9A DYNAMIC (3) Input Capacitance C iss 950 pF VDS=25 V, V GS=0V, f=1MHzOutput Capacitance C oss 200 pF Reverse Transfer Capacitance C rss 50 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 4.2 ns VDD =5V, I D=3.7A RG=6.2 Ω,R D=4.0 Ω (Refer to test circuit) Rise Time t r 4.5 ns Turn-Off Delay Time t d(off) 20.5 ns Fall Time t f 8n s Total Gate Charge Q g 27 nC VDS=24V,V GS=10V, ID=3.7A (Refer to test circuit) Gate-Source Charge Q gs 5n C Gate Drain Charge Q gd 4.5 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.95 V T j=25°C, I S=3.7A, VGS=0V Reverse Recovery Time (3) t rr 24.5 ns T j=25°C, I F=3.7A, di/dt= 100A/ µsReverse Recovery Charge(3) Q rr 19.1 nC (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2005 e c E E1 D b A1 AA2 R L PACKAGE DETAILS 1.02 0.040 4.8 0.189 0.41 0.016 0.65 0.023 mm inches PAD LAYOUT DETAILS DIM Millimeters Inches MIN MAX MIN MAX A 0.91 1.11 0.036 0.044 A1 0.10 0.20 0.004 0.008 B 0.25 0.36 0.010 0.014 C 0.13 0.18 0.005 0.007 D 2.95 3.05 0.116 0.120 e 0.65NOM 0.0256 e1 0.33NOM 0.0128 E 2.95 3.05 0.116 0.120 H 4.78 5.03 0.188 0.198 L 0.41 0.66 0.016 0.026 PACKAGE DIMENSIONS