ZXM64N035L3 ZETEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

V(BR)DSS = 35V: RDS(on) = 0.060 : ID = 13A

DESCRIPTION

This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

/c183Low on-resistance /c183Fast switching speed /c183Low threshold /c183Low gate drive /c183TO220 package

APPLICATIONS

/c183100W Class D Audio Output Stage /c183Motor Control DEVICE MARKING /c183ZXM6 4N035 ZXM64N035L3 PROVISIONAL ISSUE A - JANUARY 2002 35V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE MULTIPLES ZXM64N035L3 1000

ORDERING INFORMATION

PROVISIONAL ISSUE A - JANUARY 2002 PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 35 V Gate-Source Voltage VGS /H1100620 V Continuous Drain Current (V GS=10V; T C=25°C)(a) (VGS=10V; T A=25°C)(b) ID 13 3.5 A Pulsed Drain Current (b) IDM 30 A Continuous Source Current (Body Diode)(b) IS 2.4 A Pulsed Source Current (Body Diode)(b) ISM 30 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 20 160 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.5 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL VALUE UNIT Junction to Case (a) RθJC 6.25 °C/W Junction to Ambient (b) RθJA 83.3 °C/W THERMAL RESISTANCE

PROVISIONAL ISSUE A - JANUARY 2002 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V(BR)DSS 35 V ID=250 /H9262A, V GS=0V Zero Gate Voltage Drain Current IDSS 1 /H9262A VDS=35V, V GS=0V Gate-Body Leakage IGSS 100 nA VGS=/H1100620V, V DS=0V Gate-Source Threshold Voltage VGS(th) 1.0 V ID=250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.060 0.070 /H9024 /H9024 VGS=10V, I D=3.7A VGS=4.5V, I D=1.9A Forward Transconductance (1)(3) gfs 4.3 S VDS=10V,I D=1.9A DYNAMIC (3) Input Capacitance Ciss 950 pF VDS=25V, V GS=0V, f=1MHzOutput Capacitance Coss 200 pF Reverse Transfer Capacitance Crss 50 pF SWITCHING (2) (3) Turn-On Delay Time td(on) 4.2 ns VDD =15V, I D=3.7A RG=6.0 /H9024, VGS=10V Rise Time tr 4.5 ns Turn-Off Delay Time td(off) 20.5 ns Fall Time tf 8n s Total Gate Charge Qg 27 nC VDS=24V,V GS=10V, ID=3.7AGate-Source Charge Qgs 5n C Gate-Drain Charge Qgd 4.5 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.95 V TJ=25 /H11034C, I S=3.7A, VGS=0V Reverse Recovery Time (3) trr 24.5 ns TJ=25 /H11034C, I F=3.7A, di/dt= 100A/ /H9262s Reverse Recovery Charge (3) Qrr 19.1 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width=300/H9262s. Duty cycle /H113492% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex plc 2001 ZXM64N035L3 PROVISIONAL ISSUE A - JANUARY 2002 Package Outline DIM Millimetres Inches Min Max Min Max A 3.56 4.82 0.140 0.189 b 0.38 1.01 0.015 0.040 b1 1.15 1.77 0.045 0.070 c1 0.41 0.50 0.016 0.020 D 14.23 16.51 0.560 0.650 E 9.66 10.66 0.380 0.419 e 2.29 2.79 0.090 0.110 e1 4.83 5.33 0.190 0.210 F 0.51 1.39 0.20 0.055 H1 5.58 6.85 0.230 0.270 J1 2.04 2.92 0.080 0.115 L 12.70 14.73 0.500 0.580 L1 /H50076.35 /H50070.250 /H11083P 3.54 4.08 0.139 0.160 Q 2.54 3.42 0.100 0.134 Package Dimensions