ZXM62P02E6_04 ZETEX | Alldatasheet

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Technical content

20V P-CHANNEL ENHANCEMENT MODE MOSFET ZXM62P02E6 SUMMARY V(BR)DSS=-20V; RDS(ON)=0.20V; ID=-2.3A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23-6 package

APPLICATIONS

  • DC - DC Converters
  • Power Management Functions
  • Disconnect switches
  • Motor control

ORDERING INFORMATION

(inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXM62P02E6TA 7 8mm embossed 3000 units ZXM62P02E6TC 13 8mm embossed 10000 units DEVICE MARKING

  • 2P02 Top View SOT23-6 ISSUE 1 - JUNE 2004

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 73 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -20 V Gate- Source Voltage V GS ± 12 V Continuous Drain Current (V GS=-4.5V; T A=25°C)(b) ( V GS=-4.5V; T A=70°C)(b) ID -2.3 -1.7 A Pulsed Drain Current (c) I DM -13 A Continuous Source Current (Body Diode)(b) I S -1.9 A Pulsed Source Current (Body Diode)(c) I SM -13 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.7 13.6 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ISSUE 1 - JUNE 2004

0.1 10 100 0.0001 0.1 100 08 0 1 6 0 -VDS - Drain-Source Voltage (V) Safe Operating Area 0.1 100 -ID - Drain Current (A) DC 100ms D=0.1 D=0.2 Thermal Resistance (°C/W) D=0.05 Pulse Width (s) Transient Thermal Impedance Max Power Dissipation (Watts) 1.5 T - Temperature (° ) Derating Curve Refer Note (b) Single Pulse D=0.5 10ms 1ms 100µs Pulse Width (s) 0.01 100.001 1 0.0001 10000.001 0.01 0.1 1 10 Transient Thermal Impedance Thermal Resistance (°C/W) D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse 100 120 100 Refer Note (a)1 0.5 60 14020 40 100 120 Refer Note (a) Refer Note (b) Refer Note (a) CHARACTERISTICS ISSUE 1 - JUNE 2004

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -20 V ID=-250 µ A, V GS=0V Zero Gate Voltage Drain Current I DSS -1 µA VDS=-20V, V GS=0V Gate-Body Leakage I GSS ±100 nA VGS=± 12V, V DS=0V Gate-Source Threshold Voltage V GS(th) -0.7 V ID=-250 µA, V DS= V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.2 0.375 Ω Ω V GS=-4.5V, I D=-1.6A VGS=-2.7V, I D=-0.8A Forward Transconductance (3) g fs 1.5 S V DS=-10V,I D=-0.8A DYNAMIC (3) Input Capacitance C iss 320 pF VDS=-15 V, V GS=0V, f=1MHzOutput Capacitance C oss 150 pF Reverse Transfer Capacitance C rss 75 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 4.1 ns VDD =-10V, I D=-1.6A RG=6.0 Ω , RD=6.1 Ω (Refer to test circuit) Rise Time t r 15.4 ns Turn-Off Delay Time t d(off) 12.0 ns Fall Time t f 19.2 ns Total Gate Charge Q g 5.8 nC VDS=-16V,V GS=-4.5V, ID=-1.6A (Refer to test circuit) Gate-Source Charge Q gs 1.25 nC Gate Drain Charge Q gd 2.8 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.95 V T j=25°C, I S=-1.6A, VGS=0V Reverse Recovery Time (3) t rr 22.5 ns T j=25°C, I F=-1.6A, di/dt= 100A/ µs Reverse Recovery Charge(3) Q rr 10.4 nC (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - JUNE 2004

0.1 100 12 . 5 5 0.1 10 100 0.2 0.8 1.4 20050-100 0.1 10 100 -VDS - Drain-Source Voltage (V) Output Characteristics 0.1 100 -ID - Drain Current (A) VDS=-10V -ID - Drain Current (A) 100 0.1 -VGS - Gate-Source Voltage (V) Typical Transfer Characteristics RDS(on) - Drain-Source On-Resistance (Ω ) 0.1 -ID - Drain Current (A) On-Resistance v Drain Current -ID - Drain Current (A) 100 -VGS 0.1 -VDS - Drain-Source Voltage (V) Output Characteristics Normalised RDS(on) and VGS(th) 1.6 1.0 0.4 Tj - Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature -ISD - Reverse Drain Current (A) 100 0.1 -VSD - Source-Drain Voltage (V) Source-Drain Diode Forward Voltage T=150°C T=25°C +150°C T=150°C VGS=-4.5V T=25°C RDS(on) ID=-1.6A VGS=VDS ID=-250µA VGS(th) 1.5 3 24 . 5 0.4 1.0 0.6 1.2 2.5V 3.5V 5V 4.5V-VGS 2.5V 3.5V 4V4.5V5V +25°C 11 0 0.6 1.2 0.8 1.4 1500-50 100 VGS=-3V VGS=-5V 3.5 4 TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2004

Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit 0.1 10 100 0 2.5 5 -VDS - Drain Source Voltage (V) Capacitance v Drain-Source Voltage 600 700 C - Capacitance (pF) ID=-1.6A -VGS - Gate-Source Voltage (V) Q - Charge (nC) Gate-Source Voltage v Gate Charge Ciss Coss Crss Vgs=0V f=1Mhz 200 400 100 300 500 4.5 43.5 VDS=-16V 3.5 2.5 1.5 0.5 11 . 52 30.5 4.5 ZXM62P02E6 ISSUE 1 - JUNE 2004

Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong  Zetex plc 1999 Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PACKAGE DIMENSIONS DA TUM Aa C E AA 2 D b e PAD LAYOUT DETAILS DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF 0.037 REF e1 1.90 REF 0.074 REF L 0° 10° 0° 10° ISSUE 1 - JUNE 2004