ZXM62N03G ZETEX | Alldatasheet

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Technical content

V(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7A

DESCRIPTION

This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

/Bb7 Low on-resistance /Bb7 Fast switching speed /Bb7 Low threshold /Bb7 Low gate drive /Bb7 SOT223 package

APPLICATIONS

/Bb7 DC-DC Converters /Bb7 Audio Output Stage /Bb7 Relay and Soleniod driving /Bb7 Motor Control DEVICE MARKING /Bb7 ZXM6 2N03 ZXM62N03G ISSUE 1 - OCTOBER 2002 30V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXM62N03GTA 7” 12mm 1000 units ZXM62N03GTC 13” 12mm 4000 units

ORDERING INFORMATION

PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 V Gate-Source Voltage V GS /H1100620 V Continuous Drain Current (V GS=10V; T A=25°C)(b) (VGS=10V; T A=70°C)(b) (VGS=10V; T A=25°C)(a) ID 4.7 3.8 3.4 A Pulsed Drain Current (c) I DM 16 A Continuous Source Current (Body Diode) (b) I S 2.6 A Pulsed Source Current (Body Diode)(c) I SM 16 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 2.0 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 3.9 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 62.5 °C/W Junction to Ambient (b) R θJA 32 °C/W THERMAL RESISTANCE NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H1108810 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 30 V ID=250 µ A, V GS=0V Zero Gate Voltage Drain Current I DSS 1 /H9262AV DS=30V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) 1.0 V I D=250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.11 0.15 /H9024 /H9024 VGS=10V, I D=2.2A VGS=4.5V, I D=1.1A Forward Transconductance (1)(3) g fs 1.1 S V DS=15V,I D=1.1A DYNAMIC (3) Input Capacitance C iss 380 pF VDS=25V, V GS=0V, f=1MHzOutput Capacitance C oss 90 pF Reverse Transfer Capacitance C rss 30 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 2.9 ns VDD =15V, I D=2.2A RG=6.0 /H9024,VGS=10V Rise Time t r 5.6 ns Turn-Off Delay Time t d(off) 11.7 ns Fall Time t f 6.4 ns Total Gate Charge Q g 9.6 nC VDS=24V,V GS=10V, ID=2.2AGate-Source Charge Q gs 1.7 nC Gate-Drain Charge Q gd 2.8 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.95 V T J=25 /H11034C, I S=2.2A, VGS=0V Reverse Recovery Time (3) t rr 18.8 ns T J=25 /H11034C, I F=2.2A, di/dt= 100A/ /H9262s Reverse Recovery Charge (3) Q rr 11.4 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width=300/H9262s. Duty cycle /H113492% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

0.1 100 24 6 . 5 0.1 10 100 0.2 0.8 1.4 20050-100 0.1 10 100 VDS - Drain-Source Voltage (V) Output Characteristics 0.1 100 ID - Drain Current (A) VDS=10V ID - Drain Current (A) 100 0.1 VGS - Gate-Source Voltage (V) Typical Transfer Characteristics RDS(on) - Drain-Source On-Resistance (/c87) 10 0.01 ID - Drain Current (A) On-Resistance v Drain Current ID - Drain Current (A) 100 0.1 VDS - Drain-Source Voltage (V) Output Characteristics Normalised RDS(on) and VGS(th) 1.0 Tj - Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature ISD - Reverse Drain Current (A) 100 0.1 VSD - Source-Drain Voltage (V) Source-Drain Diode Forward Voltage T=150°C T=25°C +150°C T=150°C VGS=10V T=25°C RDS(on) ID=2.2A VGS=VDS ID=250uA VGS(th) 2.5 5 3.5 5.5 0.4 1.0 0.6 1.2 VGS 4.5V 3.5V 6V7V8V10V +25°C 11 0 0.4 1.2 0.6 0.8 1.4 1.6 1500-50 100 0.1 VGS=3V VGS=4.5V 10V 8V 7V 6V VGS 4.5V 3.5V 36 4.5 VGS=10V TYPICAL CHARACTERISTICS

Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit 0.1 10 100 0 4 VDS - Drain Source Voltage (V) Capacitance v Drain-Source Voltage 500 900 C - Capacitance (pF) ID=2.2A VGS - Gate-Source Voltage (V) Q- C h a r g e( n C ) Gate-Source Voltage v Gate Charge Ciss Coss Crss Vgs=0V f=1Mhz 400 800 700 300 200 600 100 4.5 VDS=16V 3.5 2.5 1.5 0.5 123 5 TYPICAL CHARACTERISTICS

Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uk.sales@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex plc 2002 2.0 min 2.3 1.5 min (3x) (3x) 4.6 6.8 3.8 min 2.0 min PAD LAYOUT DETAILS PACKAGE OUTLINE DIM Millimetres Inches Min Max Min Max A 6.3 6.7 0.248 0.264 B 3.3 3.7 0.130 0.146 C - 1.7 - 0.067 D 0.6 0.8 0.024 0.031 E 2.9 3.1 0.114 0.122 F 0.24 0.32 0.009 0.13 G NOM 4.6 NOM 0.181 H 0.85 1.05 0.033 0.041 K 0.02 0.10 0.0008 0.004 L 6.7 7.3 0.264 0.287 M NOM 2.3 NOM 0.0905 PACKAGE DIMENSIONS